山东大学刘超课题组使用APSYS软件研究成果分享

山东大学刘超课题组使用APSYS软件研究成果分享

山东大学刘超课题组使用Crosslight公司的APSYS软件在器件仿真课题多个项目上取得了令人瞩目的研究成果。

以下分享课题组在2023年及2024年发表的多项学术论文：

Paper1：

《Systematic Design and Parametric Analysis of GaN Vertical Trench MOS Barrier Schottky Diode With p-GaN Shielding Rings》

Paper2:

《Analytical Model and Design Strategy for GaN Vertical Floating Island Schottky Diodes》

Paper3:

《Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light-emitting diodes with locally embedded p-i-n junctions》

Paper4:

《Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection》

Paper5:

《Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling》

Paper6:

《Enhanced Carrier Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface》

Paper7:

《Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes》

Paper8:

《Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a p-n junction hole accelerator》

Paper9:

《Simultaneously improved hole injection and current uniformity in 293 nm AlGaN-based deep ultraviolet light-emitting diodes》

Paper10:

《Improving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL/hole supplier interface》

Paper11:

《Design strategy and working principle of GaN vertical trench gate MOSFETs with p-type shielding rings》

Paper12:

《Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier Layer》

Paper13:

《AlGaN-Based DUV LEDs With Al-CompositionEngineered AlGaN Superlattice Inserted at the p-EBL/Hole Supplier Interface》

Paper14:

《GaN Vertical MOSFETs With Monolithically Integrated Freewheeling Merged pn-Schottky Diodes (MPS-MOS) for 1.2-kV Applications》