2006 – 2008期刊论文

2008

2007

2006

  • “Avalanche photodiode with sectional InGaAsP/InP charge layer”,
    D. Haško, J. Kováč, F. Uherek, J. Škriniarová, J. Jakabovič & L. Peternai, Microelectronics Journal,Volume 37, Issue 6, June 2006, pp. 483-6
  • “3D Simulations on Realistic GaN-Based Light-Emitting Diodes”,
    Simon Li, Z.Q. Li, O. Shmatov, C.S. Xia, W. Lu, Materials Research Society, Paper #: 0892-FF12-12.
  • “Modeling of multi-junction solar cells by Crosslight APSYS”,
    Li, Z. Q.; Xiao, Y. G.; Li, Z. M. Simon, High and Low Concentration for Solar Electric Applications. Proceedings of the SPIE, Volume 6339, pp. 633909 (2006).
  • “Red Light Vertical-Cavity Surface-Emitting Lasers”,
    ZHANG Yan, PENG Biao, LIU Guang-yu, SUN Yah-fang, LI Te & CUI Jin-jiang; OME Information Vol. 12 (2006), pp.27-34
  • “Top mirror optimization of high-speed intracavity-contacted oxide-confined vertical-cavity surface-emitting lasers”,
    V. V. Lysak, Ki Soo Chang & Y.T. Lee, Journal of Optoelectronics and Advanced Materials, Vol. 8, No. 1, February 2006, pp. 355-358
  • “Structure optimization of high speed intracavity-contacted oxide-confined VCSELs”,
    V.V. Lysak & Y.T.Lee, Joint International Conference on Optical Internet and Next Generation Network (2006)
  • “Accurate modelling of InGaN quantum wells”,
    Hans Wenzel, Optical and Quantum Electronics, Vol. 38, No. 12-14 / Sep. 2006
  • “Optimization of Barrier Structure for Strain-Compensated Multiple-Quantum-Well AlGaInP Laser Diodes”,
    Man-Fang Huang & Yu-Lung Sun, Japanese Journal of Applied Physics Vol. 45, No. 10A, 2006, pp. 7600-7604.
  • Study of quantum and short-channel effects for sub-50nm FINFETS,
    Wei-Da HU, Xiao-Shuang CHEN, Zhi-Jue QUAN, Xu-Chang ZHOU and Wei LU, Journal of Infrared and Millimeter Waves, vol. 25, No. 2, p. 90-94, 2006
  • High-power distributed feedback laser diodes emitting at 820 nm,
    Shenghui FU, Yuan Zhong, Guofeng Song, Lianghui Chen, Chinese Journal of Semiconductors, vol. 27, No. 6, p. 966-969, 2006.
  • Effects of Built-In Polarization on InGaN-GaN Vertical-Cavity Surface-Emitting Lasers,
    Joachim Piprek, Robert Farrell, Steve DenBaars, and Shuji Nakamura, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 1, JANUARY 1, 2006, p.7
  • A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling“,
    H. Wenzel, R. G¨¹ther, A. M. Shams-Zadeh-Amiri, Member, IEEE, and P. Bienstman, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 1, JANUARY 2006, p. 64
  • Man-Fang Huang, Member, IEEE, and Tsung-Hung Lu, ”
    Optimization of the Active-Layer Structure forthe Deep-UV AlGaN Light-Emitting Diodes,”
    IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 8, AUGUST 2006, p. 820
  • H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park,
    “Highly stable temperature characteristics of InGaN blue laser diodes”,
    APPLIED PHYSICS LETTERS 89, 031122 (2006)
  • O. Douheret, K. Maknys and S. Anand,
    “Electrical Characterisation of III-V Buried Heterostructure Lasers by Scanning Capacitance Microscopy”,
    in NATO Science Series, Volume 186, Springer Netherlands, 2006, Pages 413-424
  • Christoph Wachter,
    INTEGRATED OPTICS DESIGN: SOFTWARE TOOLS AND DIVERSIFIED APPLICATIONS“,
    in NATO Science Series II: Mathematics, Physics and Chemistry Frontiers in Planar Lightwave Circuit Technology, Design, Simulation, and Fabrication, Siegfried Janz, Jiri Ctyroky and Stoyan Tanev, ed., Springer Netherlands 2006
  • Yi-An Chang, Sheng-Horng Yen, Te-Chung Wang, Hao-Chung Kuo, Yen-Kuang Kuo, Tien-Chang Lu and Shing-Chung Wang,
    Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes,”
    Semicond. Sci. Technol. 21 No 5 (May 2006) 598-603
  • Yow-Jon Lin and Yow-Lin Chu,
    Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique,”
    Semicond. Sci. Technol. 21 No 8 (August 2006) 1172-117
  • D. Y. Lin, W. C. Lin, and J. J. Shiu,
    Optical study of the AlGaN/GaN high electron mobility transistor structures,
    Phys. Stat. Sol. (a) 203, No. 7, 1856-1860 (2006)
  • Yen-Kuang KUO, Shang-Wei HSIEH and Hsiu-Fen CHEN,
    Numerical Study on Optimization of Active Regions for um AlGaInAs and InGaAsN Material Systems”,
    Japanese Journal of Applied Physics, Vol. 45, No. 3A, 2006, pp. 1588-1590
  • Bao-Jen Pong, Chi-Hsing Chen, Sheng-Horng Yen, Jin-Fu Hsu, Chun-Ju Tun, Yen-Kuang Kuo, Cheng-Huang Kuo, Gou-Chung Chi,
    “Abnormal blue shift of InGaN micro-size light emitting diodes”,
    Solid-State Electronics 50 (2006) 1588-159
  • Takashi Kyonoa, Hideki Hirayama, Katsushi Akita, Takao Nakamura, Masahiro Adachi and Koshi Ando,
    “Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates”,
    JOURNAL OF APPLIED PHYSICS 99, 114509 (2006)
  • I. Ahmad, V. Kasisomayajula, D. Y. Song, L. Tian, J. M. Berg, and M. Holtz,
    “Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations”,
    JOURNAL OF APPLIED PHYSICS 100, 113718 (2006)
  • Joachim Piprek,
    “GaN-based Devices: Physics and Simulation”,
    Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD’06, Singapore, 11-14 Sept. 2006,
    paper MA2
  • S.-H. Yen, B.J. Chen, Y.-K. Kuo,
    “Simulation of InGaN Violet and Ultraviolet Multiple-Quantum-Well Laser Diodes”,
    Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD’06, Singapore, 11-14 Sept. 2006,
    paper MC1
  • C. S. Xia, W. Lu, Z. M. Simon Li, Z. Q. Li,
    “Simulation of InGaN/GaN multiple quantum well light emitting diodes with Quantum Dot electrical and optical effects”,
    Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD’06, Singapore, 11-14 Sept. 2006,
    paper MC3
  • Y. Sheng, O. Shmatov, Z. M. Simon Li,
    “3D Simulation of InGaN/GaN Micro-Ring Light-Emitting Diodes,”

    Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD’06, Singapore, 11-14 Sept. 2006,
    paper MC5
  • M. Nadir,
    “First and second order DFB lasers with GaInNAs-GaAs quantum-well”
    ,
    Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD’06, Singapore, 11-14 Sept. 2006, paper TuP9
  • I.-S. Chung, Y. T. Lee,
    “Modeling of distributed Bragg reflectors for current crowding simulation in intracavity-contacted VCSEL”,
    Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD’06, Singapore,
    11-14 Sept. 2006, paper WB3
  • Sheng-Horng Yen, Bo-Jean Chen, Mei-Ling Chen, Yen-Kuang Kuo, Yi-An Chang, and Hao-Chung Kuo,
    “Fabrication and simulation of ultraviolet AlGaInN light-emitting diodes
    “,
    Light-Emitting Diodes: Research, Manufacturing, and Applications X, edited by Klaus P. Streubel, H.
    Walter Yao, E. Fred Schubert, Proc. of SPIE Vol. 6134, 61340N-1 (2006)
  • Shu-Hsuan Chang, Yung-Cheng Chang, Cheng-Hong Yang, Jun-Rong Chen, Yen-Kuang Kuo,
    “Numerical simulation of optical and electronic properties for multilayer organic light-emitting diodes and its application in engineering education”,
    Light-Emitting Diodes: Research, Manufacturing, and Applications X,
    edited by Klaus P. Streubel, H. Walter Yao, E. Fred Schubert, Proc. of SPIE Vol. 6134, 61340R-1 (2006)
  • Y. G. Xiao, Z. Q. Li, Z. M. Simon Li,
    “Modeling of avalanche photodiodes by Crosslight APSYS”
    ,
    Infrared and Photoelectronic Imagers and Detector Devices II, edited by Randolph E. Longshore, Ashok Sood, Proc. of SPIE Vol. 6294, 62940Z-1 (2006)
  • Z.Q. Li, Alfred K. M. Lam, and Z. Simon Li,
    “Analysis of a Surface-normal Coupled-Quantum-Well Modulator at 1.55 μm“,
    Physics and Simulation of Optoelectronic Devices XIV, edited by Marek Osinski, Fritz Henneberger, Yasuhiko Arakawa, Proc. of SPIE Vol. 6115, 611508-1 (2006)
  • Yen-Kuang Kuo, Sheng-Horng Yen, Ming-Wei Yao,
    “Optimization study on active layers and optical performance for 1.3-um AlGaInAs and InGaNAs semiconductor lasers”,
    Physics and Simulation of Optoelectronic Devices XIV, edited by Marek Osinski, Fritz Henneberger, Yasuhiko Arakawa, Proc. of SPIE Vol. 6115, 611526-1 (2006)
  • Yen-Kuang Kuo, Sheng-Horng Yen, Jun-Rong Chen,
    “Numerical simulation of AlInGaN ultraviolet light-emitting diodes”
    Optoelectronic Devices: Physics, Fabrication, and Application III, edited by Joachim Piprek, Jian Jim Wang, Proceedings of SPIE Vol. 6368, 636812 (2006)
  • H. Wenzel, R. G¨¹ther, A. M. Shams-Zadeh-Amiri and P. Bienstman,
    “A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling”,
    IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 1, JANUARY 2006,p. 64
  • Yi-An Chang, Sheng-Horng Yen, Te-ChungWang, Hao-Chung Kuo, Yen-Kuang Kuo, Tien-Chang Lu and Shing-Chung Wang,
    Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes“,
    Semicond. Sci. Technol. 21 (2006) 598-603
  • Yow-Jon Lin1 and Yow-Lin Chu,
    “Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique”,
    Semicond. Sci. Technol. 21 (2006) 1172-1175
  • Yi-An Chang, Tsung-Shine Ko, Jun-Rong Chen2, Fang-I Lai,Chun-Lung Yu, I-Tsung Wu, Hao-Chung Kuo,Yen-Kuang Kuo, Li-Wen Laih, Li-Horng Laih, Tin-Chang Lu and Shing-Chung Wang,
    “The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers”,
    Semicond. Sci. Technol. 21 (2006) 1488-1494
  • Shang-Wei Hsieh and Yen-Kuang Kuo,
    “A numerical study on characteristic temperature of short-cavity 1.3-um AlGaInAs/InP MQW lasers”,
    Applied Physics A: Materials Science & Processing, Volume 82, Number 2