2009

2011

“Correlation of barrier material and quantum‐well number for InGaN/(In) GaN blue light‐emitting diodes”,
J. Y. Chang, Y. K. Kuo, and M. C. Tsai, physica status solidi (a), Vol. 208, No. 3, 2011, doi:10.1002/pssa.201026369
“Comment on “The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN-InGaN photovoltaic devices”[Appl. Phys. Lett. 96, 051107 (2010)]”,
J.-Y. Chang and Y.-K. Kuo, Applied Physics Letters, Vol. 98, No. 3, 2011, doi:10.1063/1.3544929
“Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN pin solar cells with polarization compensation interlayers”,
J.-Y. Chang, B.-T. Liou, H.-W. Lin, Y.-H. Shih, S.-H. Chang, and Y.-K. Kuo, Optics letters, Vol. 36, No. 17, 2011, doi:10.1364/OL.36.003500
“A Simulation-Based LED Design Project in Photonics Instruction Based on Industry–University Collaboration”,
S.-H. Chang, M.-L. Chen, Y.-K. Kuo, and Y.-C. Shen, Education, IEEE Transactions on, Vol. 54, No. 4, 2011, doi:10.1109/TE.2010.2098877
“Study of InGaN/GaN/InGaN multi-layer barrier in GaN-based light emitting diode”,
L. Cheng, C. Xu, Y. Sheng, W. Hu, W. Lu, and Z. Li, Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on, Vol. No. 2011, doi:10.1109/NUSOD.2011.6041121
“Simulation for light power distribution of 3D InGaN/GaN MQW LED with textured surface”,
L.-W. Cheng, Y. Sheng, C.-S. Xia, W. Lu, M. Lestrade, and Z.-M. Li, Optical and quantum electronics, Vol. 42, No. 11-13, 2011, doi:10.1109/NUSOD.2010.5595695
“Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate”,
C.-H. Chiu, D.-W. Lin, Z.-Y. Li, S.-C. Ling, H.-C. Kuo, T.-C. Lu, et al., SPIE OPTO, Vol. No. 2011, doi:10.1117/12.876656
“Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates”,
C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, et al., Applied physics express, Vol. 4, No. 1, 2011, doi:10.1143/APEX.4.012105
“Design of a Coupled Quantum Well Modulator with Enhanced Modulation Efficiency”,
B. A. Clare, K. A. Mudge, and K. J. Grant, Conference on Lasers and Electro-Optics/Pacific Rim, Vol. No. 2011, doi:10.1109/IQEC-CLEO.2011.6193826
“Effects of quantum wells position and background doping on the performance of multiple quantum well solar cells”,
H. Fujii, Y. Wang, Y. Nakano, and M. Sugiyama, Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Vol. No. 2011, doi:10.1109/PVSC.2011.6186482
“Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach”,
M. Goano, S. Chiaria, M. Calciati, F. Bertazzi, G. Ghione, M. Meneghini, et al., International Conference on Nitride Semiconductors, 9th (ICNS-9), Vol. No. 2011,
“Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED [J]”,
Z. Y.-Y. F. Guan-Han, Acta Physica Sinica, Vol. 1, No. 2011,
“A simulation study of vertical tunnel field effect transistors”,
Z.-F. Han, G.-P. Ru, and G. Ruan, ASIC (ASICON), 2011 IEEE 9th International Conference on, Vol. No. 2011, doi:10.1109/ASICON.2011.6157293
“Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure”,
P.-H. Huang, H. W. Wang, M.-A. Tsai, F.-l. Lai, S.-Y. Kuo, H. Kuo, et al., Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Vol. No. 2011, doi:10.1109/PVSC.2011.6186360
“Top-Emitting Organic Light-Emitting Diodes With Step-Doped Emission Layers”,
Y.-H. Huang, B.-T. Liou, J.-D. Chen, and Y.-K. Kuo, Photonics Technology Letters, IEEE, Vol. 23, No. 8, 2011, doi:10.1109/LPT.2011.2110641
“Numerical Simulation of Single-Junction In Ga P Solar Cell With Compositional Grading Configuration”,
Y.-K. Kuo, B.-C. Lin, J.-Y. Chang, and Y.-A. Chang, Photonics Technology Letters, IEEE, Vol. 23, No. 12, 2011, doi:10.1109/LPT.2011.2140100
“Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier”,
Y.-K. Kuo, Y.-H. Shih, M.-C. Tsai, and J.-Y. Chang, Photonics Technology Letters, IEEE, Vol. 23, No. 21, 2011, doi:10.1109/LPT.2011.2165838
“Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers”,
Y.-K. Kuo, T.-H. Wang, J.-Y. Chang, and M.-C. Tsai, Applied Physics Letters, Vol. 99, No. 9, 2011, doi:10.1063/1.3633268
“Optimization of multiple quantum well structure for GaN-based blue light emitting diode”,
L. Lei, X. Zeng, Y. Fan, and Y. Zhang, Journal of Optoelectronics Laser, Vol. 22, No. 9, 2011, doi:10.1088/1674-1056/20/3/037807
“Modeling of polarization effects in InGaN PIN solar cells”,
M. Lestrade, Z. Li, Y. Xiao, and Z. S. Li, Optical and quantum electronics, Vol. 42, No. 11-13, 2011, doi:10.1007/s11082-011-9458-7
“3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics”,
S. Li and Y. Fu, Springer, 2011, 1461404819
“Simulation of carrier transport in quantum cascade lasers”,
Y. Li, G.-P. Ru, and Y.-Y. Li, ASIC (ASICON), 2011 IEEE 9th International Conference on, Vol. No. 2011, doi:10.1109/ASICON.2011.6157325
“Effects of polarization charge on the photovoltaic properties of InGaN solar cells”,
Z. Li, M. Lestrade, Y. Xiao, and S. Li, physica status solidi (a), Vol. 208, No. 4, 2011, doi:10.1002/pssa.201026489
“Improvement of performance in p-side down InGaN/GaN light-emitting diodes with graded electron blocking layer”,
Z. Li, M. Lestrade, Y. Xiao, and Z. S. Li, Japanese Journal of Applied Physics, Vol. 50, No. 8, 2011, doi:10.1143/JJAP.50.080212
“3D modeling of CMOS image sensor: From process to opto-electronic response”,
Z. S. Li, Y. Xiao, K. Uehara, M. Lestrade, S. Gao, Y. Fu, et al., Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of, Vol. No. 2011, doi:10.1109/EDSSC.2011.6117732
“Improvement in viewing angle properties of top-emitting organic light-emitting devices”,
B.-T. Liou, M.-C. Tsai, Y.-H. Huang, F.-M. Chen, Y.-R. Lin, and Y.-K. Kuo, SPIE OPTO, Vol. No. 2011, doi:10.1117/12.874157
“Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes”,
T. Lu, S. Li, K. Zhang, C. Liu, Y. Yin, L. Wu, et al., Optics express, Vol. 19, No. 19, 2011, doi:10.1364/OE.19.018319
“GaInNAs QW with GaNAs intermediate layer for long wavelength laser”,
F. Maskuriy, M. Alias, S. Mitani, and A. Manaf, Industrial Electronics and Applications (ISIEA), 2011 IEEE Symposium on, Vol. No. 2011, doi:10.1109/ISIEA.2011.6108787
“Low internal loss GaInNAs laser diode with InGaAs/GaNAs/GaAs barrier”,
F. Maskuriy, M. Alias, S. Mitani, and A. Manaf, Photonics (ICP), 2011 IEEE 2nd International Conference on, Vol. No. 2011, doi:10.1109/ICP.2011.6106823
“Dark current characteristics of InAs/GaNAs strain-compensated quantum dot solar cells”,
T. Morioka and Y. Okada, Physica E: Low-dimensional Systems and Nanostructures, Vol. 44, No. 2, 2011, doi:10.1016/j.physe.2011.09.001
“Using measurements of fill factor at high irradiance to deduce heterobarrier band offsets”,
J. Olson, M. Steiner, and A. Kanevce, Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Vol. No. 2011, doi:10.1109/PVSC.2011.6186459
“Polarization-doped AlGaN light-emitting diode”,
J. Piprek, Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on, Vol. No. 2011, doi:10.1109/NUSOD.2011.6041211
“Efficiency and electron leakage characteristics in GaN-based light-emitting diodes without AlGaN electron-blocking-layer structures”,
H.-Y. Ryu, J.-I. Shim, C.-H. Kim, J. H. Choi, H. M. Jung, M.-S. Noh, et al., Photonics Technology Letters, IEEE, Vol. 23, No. 24, 2011, doi:10.1109/LPT.2011.2170409
“The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer”,
L. Tai-Ping, L. Shu-Ti, Z. Kang, L. Chao, X. Guo-Wei, Z. Yu-Gang, et al., Chinese Physics B, Vol. 20, No. 9, 2011, doi:10.1088/1674-1056/20/9/098503
“Blue InGaN light-emitting diodes with dip-shaped quantum wells”,
L. Tai-Ping, L. Shu-Ti, Z. Kang, L. Chao, X. Guo-Wei, Z. Yu-Gang, et al., Chinese Physics B, Vol. 20, No. 10, 2011, doi:10.1088/1674-1056/20/10/108504
“Efficiency Droop Improvement in InGaN/GaN Light-emitting Diodes by Graded-composition Electron Blocking Layer”,
C. Wang, W. Chang, S. Chang, J. Li, H. Kuo, T. Lu, et al., Conference on Lasers and Electro-Optics/Pacific Rim, Vol. No. 2011, doi:10.1109/IQEC-CLEO.2011.6193935
“Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions”,
C. Wang, D. Lin, C. Chiu, S. Chang, Z. Li, J. Li, et al., Proc. of SPIE Vol, Vol. 7954, No. 2011, doi:10.1117/12.874935
“Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells”,
C.-H. Wang, W.-T. Chang, S.-P. Chang, J. Li, H.-c. Kuo, T.-C. Lu, et al., CLEO: Science and Innovations, Vol. No. 2011, doi:10.1364/CLEO_SI.2011.CWF4
“Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers”,
T.-H. Wang, J.-Y. Chang, M.-C. Tsai, and Y.-K. Kuo, SPIE OPTO, Vol. No. 2011, doi:10.1117/12.874909
“Equilibrium between spontaneous polarization, piezoelectric polarization and crystal defects for blue LEDs on sapphire substrate”,
Y. Wang, Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on, Vol. No. 2011, doi:10.1109/MACE.2011.5987179
“Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics”,
L. Wei-Yi, R. Guo-Ping, J. Yu-Long, and R. Gang, Chinese Physics B, Vol. 20, No. 8, 2011, doi:10.1088/1674-1056/20/8/087304
“Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier”,
C. S. Xia, Z. S. Li, W. Lu, Z. H. Zhang, Y. Sheng, and L. W. Cheng, Applied Physics Letters, Vol. 99, No. 23, 2011, doi:10.1063/1.3665252
“Modeling of CdZnTe/CdTe/Si triple junction solar cells”,
Y. Xiao, Z. Li, M. Lestrade, and Z. S. Li, Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Vol. No. 2011, doi:10.1109/PVSC.2011.6186215
“3D modeling of active pixel sensor with microlens”,
Y. Xiao, Z. S. Li, K. Uehara, M. Lestrade, and Z. Li, Microopics Conference (MOC), 2011 17th, Vol. No. 2011,
“The design and simulation of four-junction solar cell InGaP/GaAs/GaInAsN/Ge”,
G.-f. ZHANG, J.-y. TANG, J.-f. CHEN, F.-c. ZHOU, B.-x. Lin, and J.-j. LIAO, Journal of Functional Materials and Devices, Vol. 6, No. 2011,
“Design and Analysis of High-temperature Operating 795-nm VCSELs for< sup> 87 Rb Based Chip-Scale Atomic Clock”,
J. Zhang, CIOMP-OSA Summer Session: Lasers and Their Applications, Vol. No. 2011, doi:10.1364/SUMSESSION.2011.Tu17
“1550 nm DFB semiconductor lasers with high power and low noise”,
Y.-G. Zhao, A. Nikolov, and R. Dutt, SPIE OPTO, Vol. No. 2011, doi:10.1117/12.873973
“3D Modeling of CMOS Image Sensor: From Process to Opto-Electronic Response”,
Z.M. Simon Li, Y.G. Xiao et. al., 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC), Tianjin China, 17-18 Nov. 2011, doi:10.1109/EDSSC.2011.6117732
“Breakdown Voltage Enhancement for Power AlGaN/GaN HEMTs with Air-bridge Field Plate”,
Gang Xie, Edward Xu et al., 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC), Tianjin China, 17-18 Nov. 2011, doi:10.1109/EDSSC.2011.6117720
“Simulation of quantum cascade lasers”,
Z.-M. Simon Li; Ying-Ying Li; Guo-Ping Ru; J. Appl. Phys. 110, 093109 (2011); doi:10.1063/1.3660207
“Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier “,
Tu, Po-Min; Chang, Chun-Yen; Huang, Shih-Cheng; Chiu, Ching-Hsueh; Chang, Jet-Rung; Chang, Wei-Ting; Wuu, Dong-Sing; Zan, Hsiao-Wen; Lin, Chien-Chung; Kuo, Hao-Chung and Hsu, Chih-Peng; Applied Physics Letters, Vol. 98, No. 21 (May 2011), doi:10.1063/1.3591967
“MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates”,
Zheng, Qinghong; Huang, Feng; Ding, Kai; Huang, Jin; Chen, Dagui; Zhan, Zhibing and Lin, Zhang;
Applied Physics Letters, Vol. 98 No. 22 (May 2011), doi:10.1063/1.3596479
“Numerical Study on the Influence of Piezoelectric Polarization on the Performance of p-on-n (0001)-Face GaN/InGaN p-i-n Solar Cells”,
Jih-Yuan Chang and Yen-Kuang Kuo, IEEE Electron Device Letters, Vol. 32 No. 7 (July 2011), pp. 937 – 939, doi:10.1109/LED.2011.2150195
“Novel Separate Confinement Heterostructure Design for Long-Wavelength Lasers”,
Yong, Y.S.; Wong, H.Y.; Yow, H.K., IEEE Electron Device Letters, Vol. 32 No. 7 (July 2011), pp. 925 – 927, DOI:10.1109/LED.2011.2147275
“Numerical estimations of carrier generation-recombination processes and photon recycling effect in 3-μm n-on-p HgCdTe photodiodes “,
Krzysztof Jóźwikowski, Małgorzata Kopytko and Antoni Rogalski, Opt. Eng. 50, 061003 (May 05, 2011); doi:10.1117/1.3572167
“Numerical study on efficiency droop of blue InGaN light-emitting diodes”,
Yen-Kuang Kuo, Jih-Yuan Chang and Jen-De Chen, Conference Paper: Physics and Simulation of Optoelectronic Devices XIX, Photonics West 2011, San Francisco, California, USA, Proc. SPIE 7933, 793317 (2011); doi:10.1117/12.874849
“Theoretical study of polarization-doped GaN-based light-emitting diodes”,
L. Zhang, K. Ding, N. X. Liu, T. B. Wei, X. L. Ji, P. Ma, J. C. Yan, J. X. Wang, Y. P. Zeng and J. M. Li, Appl. Phys. Lett. 98, 101110 (2011); doi:10.1063/1.3565173
“Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition”,
L. Zhang, X. C. Wei, N. X. Liu, H. X. Lu, J. P. Zeng, J. X. Wang, Y. P. Zeng, and J. M. Li, Appl. Phys. Lett. 98, 241111 (2011); doi:10.1063/1.3601469
“Performances Comparison of GaN-Based LEDs with Different Electrode Shapes” (GaN基不同電極形狀的LED性能比較),
Dong Yajuan (董雅娟), Zhang Junbing (張俊兵), Lin Yueming (林岳明), Jin Yuzhe (金豫浙), Wang Shuchang (王書昶) and Zeng Xianghua (曾祥華), SEMICONDUCTOR TECHNOLOGY 2011, 36(3), doi:10.3969/j.issn.1003-353x.2011.03.001
“Thermal simulation of InP-based 1.3 μm vertical cavity surface emitting laser with AsSb-based DBRs “,
Z. Danesh and E. Rajaeia, Optics Communications, Volume 284, Issue 1, 1 January 2011, Pages 330-340, doi:10.1016/j.optcom.2010.08.044
“Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser “,
Wei Shi, Behnam Faraji, Mark Greenberg, Jesper Berggren, Yu Xiang, Mattias Hammar, Michel Lestrade, Zhi-Qiang Li, Z. M. Simon Li and Lukas Chrostowski, Optical and Quantum Electronics, DOI: 10.1007/s11082-011-9444-0
“Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode”,
Trevor Chan, Sung-Hun Son, Kyoung-Chan Kim, and Tae-Geun Kim, Journal of the Optical Society of Korea, Vol. 15, Issue 2, pp. 124-127 (2011)
“Temperature performance of the edge emitting transistor laser “,
Song Liang, Hongliang Zhu, Duanhua Kong, Bin Niu, Lingjuan Zhao and Wei Wang, Appl. Phys. Lett. 99, 013503 (2011); doi:10.1063/1.3608384
“Comparison of nitride-based dual-wavelength light-emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers “,
Zhang Yun-Yan (张运炎) and Fan Guang-Han (范广涵), Chinese Phys. B, Vol. 20 No. 4 (2011), doi: 10.1088/1674-1056/20/4/048502
“Far-field characteristics simulation analysis of blue-violet LD”,
Guo Wenwen, Electronic Test, 2011-01, DOI:CNKI:SUN:WDZC.0.2011-01-018
“Numerical Study of Blue InGaN Light-Emitting Diodes With Varied Barrier Thicknesses”,
Miao-Chan Tsai, Sheng-Horng Yen, Ying-Chung Lu, Yen-Kuang Kuo, IEEE Photonics Technology Letters, Jan.15, 2011, Vol. 23 No. 2, pp. 76-78, DOI:10.1109/LPT.2010.2091119
“Effects of polarization charge on the photovoltaic properties of InGaN solar cells”,
Z. Q. Li, M. Lestrade, Y. G. Xiao and S. Li, physica status solidi (a), 208: Apr. 2011, doi:10.1002/pssa.201190012
“Design of Three-terminal GaN Light Emitting HBT for Free Space Communication”,
Shengling Deng and Z.Rena Huang, Conference Paper, Quantum Electronics and Laser Science Conference (QELS), Baltimore (Maryland, USA), May 1, 2011, doi:10.1364/CLEO_AT.2011.JWA92
“Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells”,
Chao-Hsun Wang, Wei-Ting Chang, Shih-Pang Chang, Jinchai Li, Hao-chung Kuo, Tien-Chang Lu and Shing-chung Wang, Conference Paper, CLEO: Science and Innovations (CLEO: S and I), Baltimore (Maryland, USA), May 1, 2011, doi:10.1364/CLEO_SI.2011.CWF4
“Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers”,
Miao-Chan Tsai, Sheng-Horng Yen and Yen-Kuang Kuo, Appl. Phys. Lett. 98, 111114 (2011); doi:10.1063/1.3567786
“Effect of current spreading on the efficiency droop of InGaN light-emitting diodes”,
Han-Youl Ryu and Jong-In Shim, Optics Express, Vol. 19, Issue 4, pp. 2886-2894 (2011), doi:10.1364/OE.19.002886
“Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs”,
Yan Zhang, Yongqiang Ning, Lisen Zhang, Jinsheng Zhang, Jianwei Zhang, Zhenfu Wang, Jian Zhang, Yugang Zeng, and Lijun Wang, Optics Express, Vol. 19, Issue 13, pp. 12569-12581 (2011), doi:10.1364/OE.19.012569
“Optical Characterization of an Asymmetric Quantum Well Structure for Broadband Laser Array Application”,
Wei-Li Chen, Japanese Journal of Applied Physics, Volume 50, Issue 4, pp. 04DG16-04DG16-4 (2011), DOI: 10.1143/JJAP.50.04DG16
“Investigation of blue InGaN light-emitting diodes with step-like quantum well”,
Miao-Chan Tsai, Sheng-Horng Yen and Yen-Kuang Kuo, Applied Physics A: Materials Science & Processing, Volume 104, Number 2, 621-626, DOI: 10.1007/s00339-011-6458-1

2010

“Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer”,
Wang, C. H.; Ke, C. C.; Lee, C. Y.; Chang, S. P.; Chang, W. T.; Li, J. C.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C. and Wang, S. C., Applied Physics Letters, Vol. 97 No. 26 (Dec 2010), doi:10.1063/1.3531753
“Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure “,
Ji Lian, Zhang Shu-Ming, Jiang De-Sheng, Liu Zong-Shun, Zhang Li-Qun, Zhu Jian-Jun, Zhao De-Gang, Duan Li-Hong and Yang Hui, Chinese Physics Letters Vol. 27 No. 5, doi:10.1088/0256-307X/27/5/054204
“High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer”,
Zhi Li; Huapu Pan; Hao Chen; Beling, A. and Campbell, J.C., IEEE Journal of Quantum Electronics, Vol. 46 No. 5 (May 2010), pp. 626 – 632, doi:10.1109/JQE.2010.2046140
“Finite element simulations of compositionally graded InGaN solar cells”,
G.F. Brown, J.W. Ager III, W. Walukiewicz and J. Wu, Solar Energy Materials and Solar Cells, Volume 94, Issue 3, March 2010, Pages 478-483, doi:10.1016/j.solmat.2009.11.010
“High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes”,
M. Kopytko, K. Jóźwikowski, A. Jóźwikowska and A. Rogalski, Opto-Electronics Review, Volume 18, Number 3, pp. 277-283, DOI: 10.2478/s11772-010-1035-6
“Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared n-on-p HgCdTe photodiodes”,
K. Jóźwikowski, M. Kopytko, A. Rogalski and A. Jóźwikowska, J. Appl. Phys. 108, 074519 (2010); doi:10.1063/1.3483926
“Study of InGaN–GaN Light-Emitting Diodes With Different Last Barrier Thicknesses”,
Jun-Rong Chen; Tien-Chang Lu; Hao-Chung Kuo; Fang, K.L.; Huang, K.F.; Kuo, C.W.; Chang, C.J.; Kuo, C.T. and Shing-Chung Wang, IEEE Photonics Technology Letters, Vol. 22 No. 12 (June 15, 2010), pp. 860 – 862, doi:10.1109/LPT.2010.2046483
“SIMULATION AND OPTIMIZATION OF OPTICAL PERFORMANCE OF INP-BASED LONGWAVELENGTH VERTICAL CAVITY SURFACE EMITTING LASER WITH SELECTIVELY TUNNEL JUNCTION APERTURE”,
DANESH KAFTROUDI Z.*,RAJAEI E., JOURNAL OF THEORETICAL AND APPLIED PHYSICS (IRANIAN PHYSICAL JOURNAL) SEPTEMBER 2010; 4(2):12-20
“Investigation of dominant effect on efficiency droop in InGaN light emitting device “,
Kyu Sang Kim, Jin Ha Kim, Young Min Park, Su Jin Jung, Yong Jo Park and S. N. Cho, Appl. Phys. Lett. 97, 031113 (2010); doi:10.1063/1.3467451
“Uncooled MWIR and LWIR photodetectors in Poland”,
J. Piotrowski, J. Pawluczyk, A. Piotrowski, W. Gawron, M. Romanis and K. Kłos, Opto-Electronics Review, Volume 18, Number 3, 318-327, DOI: 10.2478/s11772-010-1022-y
“Experimental and Theoretical Analysis on GaN Multiple Quantum Well Blue LED”,
Li Weijun, China Light & Lighting 2010-01, doi:CNKI:SUN:ZGZM.0.2010-01-005
“980 nm Vertical Cavity Surface Emitting Laser Temperature-Change Output Characteristics”,
Liang Xuemei, Wang Ye, Qin Li, Li Te, Ning Yongqiang, Wang Lijun, Chinese Journal of Lasers, 2010-01, doi:CNKI:SUN:JJZZ.0.2010-01-017
“Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes”,
Manaf, N.A.A.; Alias, M.S.; Mitani, S.M. and Yahya, M.R., Conference paper: 2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT), Nov. 30 2010-Dec. 2 2010, Melaka (Malaysia), doi:10.1109/IEMT.2010.5746766
“Investigation of Optical Performance of InGaN MQW LED With Thin Last Barrier”,
Sheng-Horng Yen; Meng-Lun Tsai; Miao-Chan Tsai; Shu-Jeng Chang; Yen-Kuang Kuo; IEEE Photonics Technology Letters, Vol. 22 No. 24 (Dec.15 2010), pp. 1787 – 1789, doi: 10.1109/LPT.2010.2085427
“Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes”,
J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo and S.-C. Wang, Applied Physics B: Lasers and Optics, Volume 98, Number 4, 779-789, DOI: 10.1007/s00340-009-3856-6
“How shall we put multiple quantum wells in p-i-n structure for efficiency enhancement? “,
Sugiyama, M.; Yunpeng Wang; Soohyeck Choi; Yu Wen; Nakano, Y.; 35th IEEE Photovoltaic Specialists Conference (PVSC), 20-25 June 2010, Honolulu (HI, USA), pp. 000376 – 000379, doi:10.1109/PVSC.2010.5616857
“Systematic study on the confinement structure design of 1.5-μm InGaAlAs/InP multiple-quantum-well lasers “,
Y. S. Yong, H. Y. Wong, H. K. Yow and M. Sorel, Laser Physics, Volume 20, Number 4, pp. 811-815, DOI: 10.1134/S1054660X10070376
“Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes”,
IEEE Journal of Quantum Electronics, Vol. 46 No.8 (Aug. 2010), pp. 1214 – 1220, doi:10.1109/JQE.2010.2045104
“Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells”,
Wang, C. H.; Chang, S. P.; Chang, W. T.; Li, J. C.; Lu, Y. S.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C. and Wang, S. C.; Applied Physics Letters, Nov. 2010, Vol. 97 No. 18, pp. 181101 – 181101-3, doi:10.1063/1.3507891
“Electronic and Optical Properties of Mg_xZn_1−xO and Be_xZn_1−xO Quantum Wells”,
Enrico Furno, Simone Chiaria, Michele Penna, Enrico Bellotti and Michele Goano, Journal of Electronic Materials, Volume 39, Number 7, 936-944, DOI: 10.1007/s11664-010-1163-y
“Modeling study for developing CdZnTe(CdSe)/CIGS tandem solar cells “,
Y. G. Xiao, Z. Q. Li, M. Lestrade, and Z. M. S. Li, Conference Paper: Thin Film Solar Technology II, 1 August 2010, San Diego (California, USA), Proc. SPIE 7771, 77710K (2010); doi:10.1117/12.860958
“Thin-film GaInAsP/InP lateral current injection type Fabry-Perot laser — Improved quantum efficiency operation”,
Ito, H.; Okumura, T.; Kondo, D.; Nishiyama, N. and Arai, S., 2010 International Conference on Indium Phosphide & Related Materials (IPRM), Kagawa, Japan, May 31 2010-June 4 2010, DOI:10.1109/ICIPRM.2010.5516144
“Advantages of blue InGaN light-emitting diodes with AlGaN barriers”, Jih-Yuan Chang, Miao-Chan Tsai and Yen-Kuang Kuo, Optics Letters, Vol. 35, Issue 9, pp. 1368-1370 (2010), doi:10.1364/OL.35.001368
“Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well”,
Chih-Teng Liao, Miao-Chan Tsai, Bo-Ting Liou, Sheng-Horng Yen and Yen-Kuang Kuo, J. Appl. Phys. 108, 063107 (2010); doi:10.1063/1.3471804
“Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer”,
Yen-Kuang Kuo, Jih-Yuan Chang, and Miao-Chan Tsai, Optics Letters, Vol. 35, Issue 19, pp. 3285-3287 (2010), doi:10.1364/OL.35.003285
“A route to improved extraction efficiency of light-emitting diodes”,
H. Zhu, C. X. Shan, L. K. Wang, Y. Yang, J. Y. Zhang, B. Yao, D. Z. Shen and X. W. Fan, Appl. Phys. Lett. 96, 041110 (2010); doi:10.1063/1.3301614
“Simulations of laser diodes with nonpolar InGaN multi-quantum-wells”,
Z. Q. Li, Z. M. Simon Li, Joachim Piprek, physica status solidi (c), Special Issue: 8th International Conference on Nitride Semiconductors (ICNS-8), Volume 7, Issue 7-8, pages 2259–2261, July 2010; DOI: 10.1002/pssc.200983541
“Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes”,
Shih-Chun Ling, Tien-Chang Lu, Shih-Pang Chang, Jun-Rong Chen, Hao-Chung Kuo and Shing-Chung Wang, Appl. Phys. Lett. 96, 231101 (2010); doi:10.1063/1.3449557
“Breakdown voltage enhancement for GaN high electron mobility transistors”,
Gang Xie, Bo Zhang; Fred Y. Fu, Ng, W.T., 2010 22nd International Symposium on Power Semiconductor Devices & IC’s (ISPSD’10), Hiroshima, Japan.
“GaN High Electron Mobility Transistors with Localized Mg Doping and Drain Metal Extension”,
Gang Xie, Bo Zhang, Fred Y. Fu and W.T.Ng, 2010 International Conference on Solid-State and Integrated Circuit Technology (ICSICT’10), Shanghai, China.
“3D Simulation of CMOS Image Sensor”,
Yegao (George) Xiao, Fred Y. Fu and Zhanming Simon Li, (CMOSET’10), Whistler, Canada
“Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes”,
W.S. Lee; M.-H. Kim & al., Journal of Applied Physics 107, 063102 (2010)
“Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping”,
Di Zhu (朱迪), Ahmed N. Noemaun, Martin F. Schubert, Jaehee Cho, E. Fred Schubert, Mary H. Crawford and Daniel D. Koleske, Appl. Phys. Lett. 96, 121110 (2010), doi:10.1063/1.3371812
“Design and epitaxy of 1.5 μm InGaAsP-InP MQW material for a transistor laser”,
Z.G. Duan, W. Shi & al., Optics Express, Vol. 18, Issue 2, pp. 1501-1509 (2010)
“Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells”,
S.-H. Chang; M.-C. Tsai & al., Physics and Simulation of Optoelectronic Devices XVIII, Proc. SPIE, Vol. 7597, 759721 (2010)
“Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer”,
Kyu Sang Kim; Jin Ha Kim; Su Jin Jung; Yong Jo Park; S. N. Cho; Appl. Phys. Lett. 96, 091104 (2010)
“Role of electron blocking layer in III-nitride laser diodes and light-emitting diodes”,
Physics and Simulation of Optoelectronic Devices XVIII , Proc. SPIE, Vol. 7597, 759720 (2010)
“Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes”,
Y.-K. Kuo; S.-H. Horng; S.-H. Yen; M.-C. Tsai; M.-F. Huang, Applied Physics A: Materials Science & Processing, Volume 98, Number 3 / March, 2010, pp. 509-515
“Temperature-Dependent Electroluminescence Efficiency in Blue InGaN–GaN Light-Emitting Diodes With Different Well Widths”,
Wang, C.H.; Chen, J.R.; Chiu, C.H.; Kuo, H.C.; Li, Y.-L.; Lu, T.C.; Wang, S.C.; Photonics Technology Letters, IEEE, Volume: 22 , Issue: 4, 2010 , Page(s): 236 – 238
“Comprehensive Modeling of Superluminescent Light-Emitting Diodes”,
Li, Z. Q.; Li, Z. M. S.; Quantum Electronics, IEEE Journal of; Volume: 46 , Issue: 4 2010 , Page(s): 454 – 461
“Study on the performance of nano-optoelectronics device: InGaAs/GaAs VLW-QWIP”,
Xiong, D. Y.; Guo, F. M.; Zhang, W. E.; Nanoelectronics Conference (INEC), 2010 3rd International; 2010 , Page(s): 287 – 288
“Research on the photoelectric characteristics of a double barrier structure with quantum dots-quantum well inserted in central well”, Shengwei Zhu; Jianqiang Han; Fan, Lang.; Dayuan Xiong; Fangmin Guo; Nanoelectronics Conference (INEC), 2010 3rd International; 2010 , Page(s): 283 – 284
“Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes”,
Chiaria, S.; Furno, E.; Goano, M.; Bellotti, E.; Electron Devices, IEEE Transactions on; Volume: 57 , Issue: 1, 2010 , Page(s): 60 – 70

“Advanced 3D simulation of semiconductor devices”,
Yue Fu, George Xiao, Michel Lestrade and Simon Li, 2009 International workshop on CMOS and Emerging Technologies (CMOSET’09), Vancouver, Canada
“Finite element simulations of compositionally graded InGaN solar cells”,
Solar Energy Materials and Solar Cells, Volume 94, Issue 3, March 2010, Pages 478-483
“Single conjugated polymer nanoparticle capacitors”,
R. E. Palacios, K.-J. Lee & al., Chemical Physics, Volume 357, Issues 1-3, 23 February 2009, Pages 21-27
“Theoretical Analysis of the Number of Quantum Well in per Optical Resonance Period in 980nm OPS-VECSEL”,
L. Qin, Z.H. Tian, L.W. Cheng & al., Semiconductor Optoelectronics (2009)
“Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes”,
S.-H. Yen; M.-C. Tsai & al., Applied Physics A: Materials Science & Processing, Volume 97, Number 3 / November, 2009, pp. 705-708
“Reduction of efficiency droop in InGaN-based blue LEDs”
X. Ni; X. Li & al., Gallium Nitride Materials and Devices IV, Proc. of SPIE Vol. 7216 (2009), 72161W1-7
“Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes”,
J.-R. Chen, Y.-C. Wu & al., Applied Physics B: Lasers and Optics, Volume 98, Number 4 / March, 2010, pp. 779-789
“Light-assisted deep-trapping of holes in conjugated polymers”,
J.C. Bolinger; L. Fradkin; K.J. Lee; R. E. Palacios; P. F. Barbara, PNAS February 3, 2009 vol. 106 no. 5 1342-1346
“Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer”,
Y.-K. Kuo; M.-C. Tsai ; S.-H. Yen; Optics Communications Volume 282, Issue 21, 1 November 2009, Pages 4252-4255
“Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers”,
J.-R. Chen, S.-C. Ling & al., Applied Physics B: Lasers and Optics, Volume 95, Number 1 / April, 2009, Pages 145-153
“2D modeling of silicon based thin film dual and triple junction solar cells”,
Y. G. Xiao; K. Uehara & al, Optics and Photonics 2009, Proc. SPIE, Vol. 7409, 74090F (2009)
“Optimization of electrode shape for high power GaN-based light-emitting diodes”,
Y.P. Fan; L.W. Cheng; Y.M. Lin; J.B. Zhang; X.H. Zeng, Optoelectronics Letters, Volume 5, Number 5 / September, 2009, Pages 337-340
“The design of back surface field layer for a single GaAs solar cell”,
Y. Xiong; K. Tang & al.,Photonics and Optoelectronics Meetings (POEM) 2009, Proceedings of the SPIE, Volume 7518, pp. 751811-751811-6 (2009)
“Low dark current InGaAs/InAlAs/InP avalanche photodiode”,
J Muszalski; J Kaniewski; K Kalinowski;, 2nd National Conference on Nanotechnology ‘NANO 2008’, Journal of Physics: Conference Series 146 (2009) 012028
“Simulation on Crystalline Silicon Solar Cell with Laser-fired Contact (LFC)”,
Sheng, Y.; Xiao, Y.G.; Zhou, Y.J.; Lestrade, M.; Li, Z.Q.; Li, Z.M.S.;, Computational Electronics, 2009. IWCE ’09. 13th International Workshop on; 2009 , Page(s): 1 – 4
“2D modeling of si RCCs with laser-fired contact and surface texture”,
Xiao, Y. G.; Sheng, Y.; Zhou, Y. J.; Lestrade, M.; Li, Z. Q.; Li, Z. M. Simon; Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE, 2009 , Page(s): 001691 – 001695
“Modeling of SI-based thin film triple-junction solar cells”,
Xiao, Y. G.; Uehara, K.; Lestrade, M.; Li, Z. Q.; Li, Z. M. Simon; Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE, 2009 , Page(s): 002154 – 002158
“Numerical investigation of the effect of base doping density in transistor VCSELs”,
Shi, Wei; Faraji, Behnam; Chrostowski, Lukas; Communications and Photonics conference and Exhibition, 2009. ACP 2009. Asia; 2009 , Page(s): 1 – 2
“Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers”,
Kuo, Yen-Kuang; Chang, Jih-Yuan; Tsai, Miao-Chan; Yen, Sheng-Horng; Applied Physics Letters, Volume: 95 , Issue: 1, 2009 , Page(s): 011116 – 011116-3
“Design optimization of GaN-based VCSELs”,
Piprek, J.; Zhan-Ming Li; Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on; 2009 , Page(s): 67 – 68
“Evaluating BP Solar’s Mono2 – material: Lifetime and cell electrical data”,
Stoddard, Nathan; Sidhu, Rubin; Creager, Joe; Dey, Soham; Kinsey, Bonnie; Maisano, Lisa; Phillips, Calista; Clark, Roger; Zahler, James; Xie, XianQing; Wu, Tingbin; Jiang, Qingtang; Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE; 2009 , Page(s): 001163 – 001168
“Substrate batch effect in GaAs MESFET under ultra-short pulses”,
Bobreshov, A.M.; Korovchenko, I.S.; Stepkin, V.A.; Uskov, G.K.; Electromagnetic Compatibility, 2009 20th International Zurich Symposium on; 2009 , Page(s): 389 – 392
“Enhancement of Light Power for Blue InGaN LEDs by Using Low-Indium-Content InGaN Barriers”,
Yen-Kuang Kuo; Miao-Chan Tsai; Sheng-Horng Yen; Ta-Cheng Hsu; Yu-Jiun Shen; Selected Topics in Quantum Electronics, IEEE Journal of; Volume: 15 , Issue: 4, 2009 , Page(s): 1115 – 1121
“Effect of In and N incorporation on the GaInNAs VCSELs”,
Abdul Manaf, Nor Azlian; Alias, Mohd Sharizal; Mithani, Sufian Mousa; Yahya, Mohamed Razman; Mat, Abdul Fatah Awang; Communications and Photonics conference and Exhibition, 2009. ACP 2009. Asia; 2009 , Page(s): 1 – 2
“Optoelectronics materials and components characterization for organic inorganic laser assembling”,
Penna, S.; Reale, A.; Beleffi, G.M.T.; Andre, P.S.; Teixeira, A.L.J.; Nakao, M.; Shinada, S.; Wada, N.; OptoElectronics and Communications Conference, 2009. OECC 2009. 14th; 2009 , Page(s): 1 – 2
“Simulations of Optical Properties of a GaN Quantum Dot Embedded in a AlGaN Nanocolumn within a Mixed FEM/atomistic Method”,
Penazzi, G.; Pecchia, A.; Sacconi, F.; Auf der Maur, M.; Povolotskyi, M.; Romano, G.; Di Carlo, A.; Computational Electronics, 2009. IWCE ’09. 13th International Workshop on; 2009 , Page(s): 1 – 4
“High efficient 635nm resonant-cavity light-emitting diodes with modified electron stopped layers”,
Lysak, V.V.; Park, C.Y.; Park, K.W.; Yong Tak Lee; Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on; 2009 , Page(s): 113 – 114
“Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg Implanted Current Blocking Layer”,
Min-An Tsai; Peichen Yu; Chen, J.R.; Huang, J.K.; Chiu, C.H.; Kuo, H.C.; Lu, T.C.; Lin, S.H.; Wang, S.C.; Photonics Technology Letters, IEEE; Volume: 21 , Issue: 11, 2009 , Page(s): 688 – 690
“Optimization and Analysis on Several Impact Factors of High-Gain Separate Absorption, Grading, Charge and Multiplication Avalanche Photodiodes”,
Dapeng Hu; Bin Xu; Xilin Zhou; Fangmin Guo; Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on; 2009 , Page(s): 1 – 4
“Avalanche photodiode punch-through gain determination through excess noise analysis”,
Liu, Han-Din; Pan, Huapu; Hu, Chong; McIntosh, Dion; Lu, Zhiwen; Campbell, Joe; Kang, Yimin; Morse, Mike; Journal of Applied Physics, Volume: 106 , Issue: 6, 2009 , Page(s): 064507 – 064507-4
“Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes”,
Sheng-Horng Yen; Miao-Chan Tsai; Meng-Lun Tsai; Yu-Jiun Shen; Ta-Cheng Hsu; Yen-Kuang Kuo; Photonics Technology Letters, IEEE; Volume: 21 , Issue: 14, 2009 , Page(s): 975 – 977
“The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes”,
Zhu, Di; Xu, Jiuru; Noemaun, Ahmed N.; Kim, Jong Kyu; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Applied Physics Letters, Volume: 94 , Issue: 8, 2009 , Page(s): 081113 – 081113-3