\u5c71\u4e1c\u5927\u5b66\u5218\u8d85\u8bfe\u9898\u7ec4\u4f7f\u7528Crosslight\u516c\u53f8\u7684APSYS\u8f6f\u4ef6\u5728\u5668\u4ef6\u4eff\u771f\u8bfe\u9898\u591a\u4e2a\u9879\u76ee\u4e0a\u53d6\u5f97\u4e86\u4ee4\u4eba\u77a9\u76ee\u7684\u7814\u7a76\u6210\u679c\u3002<\/p>\n\n\n\n
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Paper1\uff1a<\/strong><\/p>\n\n\n\n \u300aSystematic Design and Parametric Analysis of GaN Vertical Trench MOS Barrier Schottky Diode With p-GaN Shielding Rings<\/a>\u300b<\/p>\n\n\n\n Paper2:<\/strong><\/p>\n\n\n\n \u300aAnalytical Model and Design Strategy for GaN Vertical Floating Island Schottky Diodes<\/a>\u300b<\/p>\n\n\n\n Paper3:<\/strong><\/p>\n\n\n\n \u300aAlleviated built-in electric field in the active region of AlGaN deep-ultraviolet light-emitting diodes with locally embedded p-i-n junctions<\/a>\u300b<\/p>\n\n\n\n Paper4:<\/strong><\/p>\n\n\n\n \u300aComprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection<\/a>\u300b<\/p>\n\n\n\n Paper5:<\/strong><\/p>\n\n\n\n \u300aDesign Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling<\/a>\u300b<\/p>\n\n\n\n Paper6:<\/strong><\/p>\n\n\n\n \u300aEnhanced Carrier Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Polarization Engineering at the LQB\/p-EBL Interface<\/a>\u300b<\/p>\n\n\n\n Paper7:<\/strong><\/p>\n\n\n\n \u300aSheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes<\/a>\u300b<\/p>\n\n\n\n Paper8:<\/strong><\/p>\n\n\n\n \u300aEnhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a p-n junction hole accelerator<\/a>\u300b<\/p>\n\n\n\n Paper9:<\/strong><\/p>\n\n\n\n \u300aSimultaneously improved hole injection and current uniformity in 293 nm AlGaN-based deep ultraviolet light-emitting diodes<\/a>\u300b<\/p>\n\n\n\n Paper10:<\/strong><\/p>\n\n\n\n \u300aImproving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL\/hole supplier interface<\/a>\u300b<\/p>\n\n\n\n <\/p>\n\n\n\n Paper11:<\/strong> <\/p>\n\n\n\n \u300aDesign strategy and working principle of GaN vertical trench gate MOSFETs with p-type shielding rings<\/a>\u300b<\/p>\n\n\n\n <\/p>\n\n\n\n Paper12:<\/strong> <\/p>\n\n\n\n \u300aEnhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier Layer<\/a>\u300b<\/p>\n\n\n\n <\/p>\n\n\n\n Paper13:<\/strong><\/p>\n\n\n\n