{"id":908,"date":"2014-08-08T11:15:39","date_gmt":"2014-08-08T18:15:39","guid":{"rendered":"http:\/\/localhost\/public_html\/?page_id=908"},"modified":"2014-08-08T11:15:39","modified_gmt":"2014-08-08T18:15:39","slug":"publications-2012-2014","status":"publish","type":"page","link":"https:\/\/crosslight.com.cn\/wordpress\/publications\/publications-2012-2014","title":{"rendered":"2012 \u2013 2014\u671f\u520a\u8bba\u6587"},"content":{"rendered":"<h2>2014<\/h2>\n<ul class=\"publist\">\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/adva\/4\/6\/10.1063\/1.4882176\" target=\"_blank\">\u201cCorrelating electroluminescence characterization and physics-based models of InGaN\/GaN LEDs: Pitfalls and open issues\u201d<\/a><\/b>,<br \/>\nMarco Calciati, Michele Goano &amp; others, AIP Advances, Vol. 4 No. 6 (2014), doi:10.1063\/1.4882176<\/li>\n<li><b><a href=\"http:\/\/spie.org\/Publications\/Proceedings\/Paper\/10.1117\/12.2040986\" target=\"_blank\">\u201cMethods for slow axis beam quality improvement of high power broad area diode lasers\u201d<\/a><\/b>,<br \/>\nH. An, Y. Xiong, C.-L. J. Jiang, B. Schmidt, and G. Treusch, SPIE LASE, 2014, doi:10.1117\/12.2040986<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/23\/4\/048502\" target=\"_blank\">\u201cA GaN\u2013AlGaN\u2013InGaN last quantum barrier in an InGaN\/GaN multiple-quantum-well blue LED\u201d<\/a><\/b>,<br \/>\nY. Bin, G. Zhi-You, X. Nan, Z. Pan-Jun, L. Jing, L. Fang-Zheng, et al., Chinese Physics B, Vol. 23, No. 4, 2014, doi:10.1088\/1674-1056\/23\/4\/048502<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/ol\/abstract.cfm?uri=ol-39-3-497\" target=\"_blank\">\u201cReduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers\u201d<\/a><\/b>,<br \/>\nJ.-Y. Chang, Y.-A. Chang, T.-H. Wang, F.-M. Chen, B.-T. Liou, and Y.-K. Kuo, Optics letters, Vol. 39, No. 3, 2014, doi:10.1364\/OL.39.000497<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6679256\" target=\"_blank\">\u201cGaN-Based Light-Emitting-Diode With a p-InGaN Layer\u201d<\/a><\/b>,<br \/>\nP. Chen, C.-H. Kuo, W.-C. Lai, Y. A. Chen, L. Chang, and S. Chang, Journal of Display Technology, Vol. 10, No. 3, 2014, doi:10.1109\/JDT.2013.2293767<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6750705\" target=\"_blank\">\u201cPerformance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN\u2013AlGaN\u2013GaN Last Barrier and Without an AlGaN Electron Blocking Layer\u201d<\/a><\/b>,<br \/>\nL. Cheng and S. Wu, Quantum Electronics, IEEE Journal of, Vol. 50, No. 4, 2014, doi:10.1109\/JQE.2014.2305451<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/abstract.cfm?URI=CLEO_AT-2014-AF2P.6\" target=\"_blank\">\u201cImpact of Surface Recombination on the Performance of Phosphor-Free InGaN\/GaN Nanowire White Light Emitting Diodes\u201d<\/a><\/b>,<br \/>\nA. T. Connie, H. P. T. Nguyen, Q. Wang, I. Shih, and Z. Mi, CLEO: Applications and Technology, 2014, doi:10.1364\/CLEO_AT.2014.AF2P.6<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/0268-1242\/29\/8\/085009\" target=\"_blank\">\u201cTunnel injection InGaN\/GaN dot-in-a-wire white-light-emitting diodes\u201d<\/a><\/b>,<br \/>\nM. Djavid, H. Nguyen, S. Zhang, K. Cui, S. Fan, and Z. Mi, Semiconductor Science and Technology, Vol. 29, No. 8, 2014, doi:10.1088\/0268-1242\/29\/8\/085009<\/li>\n<li><b><a href=\"https:\/\/circle.ubc.ca\/bitstream\/handle\/2429\/47120\/ubc_2014_september_dong_yuanwei.pdf?sequence=4\" target=\"_blank\">\u201cA systematic study of silicon germanium interdiffusion for next generation semiconductor devices\u201d<\/a><\/b>, Y. Dong, PhD Thesis, University of British Columbia (Canada), 2014.<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/104\/2\/10.1063\/1.4862028\" target=\"_blank\">\u201cEffect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells\u201d<\/a><\/b>,<br \/>\nK. Driscoll, M. F. Bennett, S. J. Polly, D. V. Forbes, and S. M. Hubbard, Applied Physics Letters, Vol. 104, No. 2, 2014, doi:10.1063\/1.4862028<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/oe\/abstract.cfm?uri=oe-22-15-17666\" target=\"_blank\">\u201cImprove power conversion efficiency of slab coupled optical waveguide lasers\u201d<\/a><\/b>,<br \/>\nJ. Fan, L. Zhu, M. Dogan, and J. Jacob, Optics Express, Vol. 22, No. 15, 2014, doi:10.1364\/OE.22.017666<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/jap\/115\/4\/10.1063\/1.4863208\" target=\"_blank\">\u201cModified InGaN\/GaN quantum wells with dual-wavelength green-yellow emission \u201d<\/a><\/b>,<br \/>\nZ. Fang, Q. Li, X. Shen, H. Xiong, J. Cai, J. Kang, et al., Journal of Applied Physics, Vol. 115, No. 4, 2014, doi:10.1063\/1.4863208<\/li>\n<li><b><a href=\"http:\/\/www.crcpress.com\/product\/isbn\/9781466583818\" target=\"_blank\">\u201cIntegrated Power Devices and TCAD Simulation\u201d<\/a><\/b>,<br \/>\nY. Fu, Z. Li, W. T. Ng, and J. K. Sin, CRC Press, 2014, 1466583819<\/li>\n<li><b><a href=\"http:\/\/proceedings.spiedigitallibrary.org\/proceeding.aspx?articleid=1838080\" target=\"_blank\">\u201cTriggering of guiding and antiguiding effects in GaN-based VCSELs\u201d<\/a><\/b>,<br \/>\nE. Hashemi, J. Bengtsson, J. Gustavsson, M. Stattin, M. Glauser, G. Cosendey, et al., SPIE OPTO, 2014, doi:10.1117\/12.2038152<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/oe\/abstract.cfm?uri=oe-22-S3-A1001\" target=\"_blank\">\u201cEfficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes\u201d<\/a><\/b>,<br \/>\nX. Ji, T. Wei, F. Yang, H. Lu, X. Wei, P. Ma, et al., Optics Express, Vol. 22, No. 103, 2014, doi:10.1364\/OE.22.0A1001<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/23\/6\/068801\" target=\"_blank\">\u201cEffects of polarization and p-type GaN resistivity on the spectral response of InGaN\/GaN multiple quantum well solar cells\u201d<\/a><\/b>,<br \/>\nY. Jing, Z. De-Gang, J. De-Sheng, L. Zong-Shun, C. Ping, L. Liang, et al., Chinese Physics B, Vol. 23, No. 6, 2014, doi::10.1088\/1674-1056\/23\/6\/068801<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/23\/5\/058502\" target=\"_blank\">\u201cEnhanced performance of GaN-based light-emitting diodes with InGaN\/GaN superlattice barriers\u201d<\/a><\/b>,<br \/>\nC. Jin-Xin, S. Hui-Qing, Z. Huan, Z. Pan-Jun, and G. Zhi-You, Chinese Physics B, Vol. 23, No. 5, 2014, doi:10.1088\/1674-1056\/23\/5\/058502<\/li>\n<li><b><a href=\"http:\/\/pubs.acs.org\/doi\/abs\/10.1021\/ph500001e\" target=\"_blank\">\u201cAdvantages of the Blue InGaN\/GaN Light-Emitting Diodes with an AlGaN\/GaN\/AlGaN Quantum Well Structured Electron Blocking Layer\u201d<\/a><\/b>,<br \/>\nZ. G. Ju, W. Liu, Z.-H. Zhang, S. T. Tan, Y. Ji, Z. Kyaw, et al., ACS Photonics, Vol. 1, No. 4, 2014, doi:10.1021\/ph500001e<\/li>\n<li><b><a href=\"link.springer.com\/article\/10.1007\/s10946-014-9408-5\" target=\"_blank\">\u201cSimulation of a Single-Mode Tunnel-Junction-Based Long-Wavelength VCSEL\u201d<\/a><\/b>,<br \/>\nZ. D. Kaftroudi, E. Rajaei, and A. Mazandarani, Journal of Russian Laser Research, Vol. 35, No. 2, 2014, doi:10.1007\/s10946-014-9408-5<\/li>\n<li><b><a href=\"http:\/\/www.hindawi.com\/journals\/apec\/2014\/697369\/\" target=\"_blank\">\u201cY-function analysis of the low temperature behavior of ultra-thin film FD SOI MOSFETs\u201d<\/a><\/b>,<br \/>\nA. Karsenty and A. Chelly, Active and Passive Electronic Components Vol. 2014, doi:10.1155\/2014\/697369<\/li>\n<li><b><a href=\"http:\/\/pubs.rsc.org\/en\/Content\/ArticleLanding\/2014\/NR\/c4nr00566j\" target=\"_blank\">\u201cEfficiency enhancement in Cu 2 ZnSnS 4 solar cells with subwavelength grating nanostructures\u201d<\/a><\/b>,<br \/>\nS.-Y. Kuo and M.-Y. Hsieh, Nanoscale 6, No.13, 2014, doi:10.1039\/C4NR00566J<\/li>\n<li><b><a href=\"http:\/\/www.hindawi.com\/journals\/ijp\/2014\/186579\/\" target=\"_blank\">\u201cDevice modeling of the performance of Cu (In, Ga) Se2 solar cells with V-shaped bandgap profiles\u201d<\/a><\/b>,<br \/>\nS.-Y. Kuo, M.-Y. Hsieh, D.-H. Hsieh, H.-C. Kuo, and F.-I. Lai, International Journal of Photoenergy Vol. 2014, doi:10.1155\/2014\/186579<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/oe\/abstract.cfm?uri=oe-22-1-809\" target=\"_blank\">\u201cOn the effect of N-GaN\/P-GaN\/N-GaN\/P-GaN\/N-GaN built-in junctions in the n-GaN layer for InGaN\/GaN light-emitting diodes\u201d<\/a><\/b>,<br \/>\nZ. Kyaw, Z.-H. Zhang, W. Liu, S. T. Tan, Z. G. Ju, X. L. Zhang, et al., Optics express, Vol. 22, No. 1, 2014, doi:10.1364\/OE.22.000809<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/oe\/abstract.cfm?uri=oe-22-10-11392\" target=\"_blank\">\u201cSuppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes\u201d<\/a><\/b>,<br \/>\nL. Le, D. Zhao, D. Jiang, P. Chen, Z. Liu, J. Yang, et al., Optics Express, Vol. 22, No. 10, 2014, doi:http:\/\/dx.doi.org\/10.1364\/OE.22.011392<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007%2Fs00339-014-8393-4\" target=\"_blank\">\u201cPerformance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier\u201d<\/a><\/b>,<br \/>\nY. Lei, Z. Liu, M. He, Z. Li, J. Kang, X. Yi, et al., Applied Physics A, Vol. 115, No. 4, 2014, doi:10.1007\/s00339-014-8393-4<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6737237\" target=\"_blank\">\u201cHigh-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers\u201d<\/a><\/b>,<br \/>\nZ.-Y. Li, C.-Y. Lee, D.-W. Lin, B.-C. Lin, K.-C. Shen, C.-H. Chiu, et al., Quantum Electronics, IEEE Journal of Vol. 50, No. 5, 2014, doi:10.1109\/JQE.2014.2304460<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/104\/9\/10.1063\/1.4867238\" target=\"_blank\">\u201cA quantitative method for determination of carrier escape efficiency in GaN-based light-emitting diodes: A comparison of open-and short-circuit photoluminescence\u201d<\/a><\/b>,<br \/>\nS.-H. Lim, Y.-H. Ko, and Y.-H. Cho, Applied Physics Letters, Vol. 104, No. 9, 2014, doi:10.1063\/1.4867238<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1612-202X\/11\/8\/085002\" target=\"_blank\">\u201cDesign and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer\u201d<\/a><\/b>,<br \/>\nB. C. Lin, Y. A. Chang, K. J. Chen, C. H. Chiu, Z. Y. Li, Y. P. Lan, et al., Laser Physics Letters, Vol. 11, No. 8, 2014, doi:10.1088\/1612-2011\/11\/8\/085002<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/oe\/abstract.cfm?uri=oe-22-1-463\" target=\"_blank\">\u201cHole injection and electron overflow improvement in InGaN\/GaN light-emitting diodes by a tapered AlGaN electron blocking layer\u201d<\/a><\/b>,<br \/>\nB.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, et al., Optics express, Vol. 22, No. 1, 2014, doi:10.1364\/OE.22.000463<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6819403\" target=\"_blank\">\u201cReduced droop effect in nitride light emitting diodes by taper-shaped electron blocking layer\u201d<\/a><\/b>,<br \/>\nC. Liu, Z. Ren, X. Chen, B. Zhao, X. Wang, and S. Li, IEEE Photonics Technology Letters, Vol. 26, No. 13, 2014, doi:10.1109\/LPT.2014.2325598<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007%2Fs00339-014-8284-8\" target=\"_blank\">\u201cImprovement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer\u201d<\/a><\/b>,<br \/>\nT. Lu, Z. Ma, C. Du, Y. Fang, F. Chen, Y. Jiang, et al., Applied Physics A, Vol. 114, No. 4, 2014, doi:10.1007\/s00339-014-8284-8<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6656839\" target=\"_blank\">\u201cEffect of stair-case electron blocking layer on the performance of blue InGaN based LEDs\u201d<\/a><\/b>,<br \/>\nT. Lu, Z. Ma, C. Du, Y. Fang, F. Chen, Y. Jiang, et al., Journal of Display Technology, Vol. 10, No. 2, 2014, doi:10.1109\/JDT.2013.2289358<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007\/s11082-013-9860-4\" target=\"_blank\">\u201cModeling of HOT (111) HgCdTe MWIR detector for fast response operation\u201d<\/a><\/b>,<br \/>\nP. Martyniuk, W. Gawron, W. Pusz, D. Stanaszek, and A. Rogalski, Optical and Quantum Electronics, Feb. 2014, doi:10.1007\/s11082-013-9860-4<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.2478%2Fs11772-014-0186-y\" target=\"_blank\">\u201cMOCVD grown MWIR HgCdTe detectors for high operation temperature conditions\u201d<\/a><\/b>,<br \/>\nP. Martyniuk, A. Ko\u017aniewski, A. K\u0119b\u0142owski, W. Gawron, and A. Rogalski, Opto-Electronics Review, Vol. 22, No. 2, 2014, doi:10.2478\/s11772-014-0186-y<\/li>\n<li><b><a href=\"http:\/\/proceedings.spiedigitallibrary.org\/proceeding.aspx?articleid=1838123\" target=\"_blank\">\u201cPhosphor-free InGaN\/GaN\/AlGaN core-shell dot-in-a-wire white light-emitting diodes\u201d<\/a><\/b>,<br \/>\nZ. Mi, H. P. Nguyen, S. Zhang, A. T. Connie, M. G. Kibria, Q. Wang, et al., SPIE OPTO, 2014, doi:10.1117\/12.2041284<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-4926\/35\/2\/024010\" target=\"_blank\">\u201cEffects of the p-AlInGaN\/GaN superlattices&#8217; structure on the performance of blue LEDs\u201d<\/a><\/b>,<br \/>\nL. Na, Y. Xiaoyan, L. Meng, G. Enqing, F. Xiangxu, S. Zhao, et al., Journal of Semiconductors, Vol. 35, No. 2, 2014, doi:10.1088\/1674-4926\/35\/2\/024010<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/104\/5\/10.1063\/1.4864311\" target=\"_blank\">\u201cOrigin of InGaN\/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions\u201d<\/a><\/b>,<br \/>\nJ. Piprek, Applied Physics Letters, Vol. 104, No. 5, 2014, doi:10.1063\/1.4864311<\/li>\n<li><b><a href=\"http:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssr.201409027\/abstract\" target=\"_blank\">\u201cBlue light emitting diode exceeding 100% quantum efficiency\u201d<\/a><\/b>,<br \/>\nJ. Piprek, physica status solidi (RRL)-Rapid Research Letters, Vol. 8, No. 5, 2014, doi:10.1002\/pssr.201409027<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6822496\" target=\"_blank\">\u201cDelta-Doping Effects on Quantum-Dot Solar Cells\u201d<\/a><\/b>,<br \/>\nS. J. Polly, D. V. Forbes, K. Driscoll, S. Hellstrom, and S. M. Hubbard, IEEE Journal of Photovoltaics, Vol. 4, No. 4, 2014, doi:10.1109\/JPHOTOV.2014.2316677<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007%2Fs11664-014-3161-y\" target=\"_blank\">\u201cMid-Wavelength Infrared nBn for HOT Detectors\u201d<\/a><\/b>,<br \/>\nA. Rogalski and P. Martyniuk, Journal of Electronic Materials, Vol. 43 No. 8, 2014, doi:10.1007\/s11664-014-3161-y<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6780638\" target=\"_blank\">\u201cTandem structure for efficiency improvement in GaN based light-emitting diodes\u201d<\/a><\/b>,<br \/>\nM.-C. Tsai, B. Leung, T.-C. Hsu, and Y.-K. Kuo, Journal of Lightwave Technology, Vol. 32, No. 9, 2014, doi:10.1109\/JLT.2014.2313953<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6842554\" target=\"_blank\">\u201cUltrabroad stimulated emission from quantum well laser\u201d<\/a><\/b>,<br \/>\nH. Wang, X. Zhou, H. Yu, J. Mi, J. Wang, J. Bian, et al., Applied Physics Letters, Vol. 104, No. 25, 2014, doi:10.1063\/1.4885366<\/li>\n<li><b><a href=\"http:\/\/spie.org\/Publications\/Proceedings\/Paper\/10.1117\/12.2038402\" target=\"_blank\">\u201cImprovement of carrier distribution by using thinner quantum well with different location\u201d<\/a><\/b>,<br \/>\nS.-W. Wang, D.-W. Lin, C.-Y. Lee, C.-C. Lin, and H.-C. Kuo, SPIE OPTO, 2014, doi:10.1117\/12.2038402<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007%2Fs11434-014-0235-4\" target=\"_blank\">\u201cSelf-heating dependent characteristic of GaN-based light-emitting diodes with and without AlGaInN electron blocking layer\u201d<\/a><\/b>,<br \/>\nT. Wang, J. Xu, and X. Wang, Chinese Science Bulletin, Vol. 59 No. 20, 2014, doi:10.1007\/s11434-014-0235-4<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/23\/6\/068502\" target=\"_blank\">\u201cEnhanced performances of InGaN\/GaN-based blue light-emitting diode with InGaN\/AlInGaN superlattice electron blocking layer\u201d<\/a><\/b>,<br \/>\nZ. Xiang-Jing, Z. Jun, L. Dan-Wei, Y. Han-Xiang, R. Zhi-Wei, T. Jin-Hui, et al., Chinese Physics B, Vol. 23, No. 6, 2014, doi:10.1088\/1674-1056\/23\/6\/068502<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/23\/2\/028503\" target=\"_blank\">\u201cInfluences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p\u2014i\u2014n avalanche photodiodes\u201d<\/a><\/b>,<br \/>\nL. Xiao-Jing, Z. De-Gang, J. De-Sheng, L. Zong-Shun, C. Ping, W. Liang-Liang, et al., Chinese Physics B, Vol. 23, No. 2, 2014, doi:10.1088\/1674-1056\/23\/2\/028503<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/23\/2\/028502\" target=\"_blank\">\u201cPerformance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer\u201d<\/a><\/b>,<br \/>\nY. Xiao-Peng, F. Guang-Han, D. Bin-Bin, X. Jian-Yong, X. Yao, Z. Tao, et al., Chinese Physics B, Vol. 23, No. 2, 2014, doi:10.1088\/1674-1056\/23\/2\/028502<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007%2Fs00339-013-8069-5\" target=\"_blank\">\u201cAdvantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers\u201d<\/a><\/b>,<br \/>\nJ.-Y. Xiong, Y.-Q. Xu, S.-W. Zheng, G.-H. Fan, and T. Zhang, Applied Physics A, Vol. 114, No. 2, 2014, doi:10.1007\/s00339-013-8069-5<\/li>\n<li><b><a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S0030401813007839\" target=\"_blank\">\u201cAdvantages of GaN based light-emitting diodes with p-AlGaN\/InGaN superlattice last quantum barrier\u201d<\/a><\/b>,<br \/>\nJ.-Y. Xiong, Y.-Q. Xu, S.-W. Zheng, F. Zhao, B.-B. Ding, J.-J. Song, et al., Optics Communications, Vol. 312, No. 2014, doi:10.1016\/j.optcom.2013.08.053<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007%2Fs11801-014-4062-2\" target=\"_blank\">\u201cStudy of dual-blue light-emitting diodes with asymmetric AlGaN graded barriers\u201d<\/a><\/b>,<br \/>\nQ.-r. Yan, Y. Zhang, and J.-z. Li, Optoelectronics Letters, Vol. 10, No. 2014, doi:10.1007\/s11801-014-4062-2<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/jap\/115\/23\/10.1063\/1.4879252\" target=\"_blank\">\u201cAnalysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers\u201d<\/a><\/b>,<br \/>\nY. Yang, J. Wang, J. Li, and Y. Zeng, Journal of Applied Physics, Vol. 115, No. 23, 2014, doi:10.1063\/1.4879252<\/li>\n<li><b><a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S0030401814002958\" target=\"_blank\">\u201cEnhancement of hole injection with Mg\u2013Si-codoped barriers in InGaN-based light-emitting diodes\u201d<\/a><\/b>,<br \/>\nY. Yang and Y. Zeng, Optics Communications, Vol. 326, No. 2014, doi:10.1016\/j.optcom.2014.03.064<\/li>\n<li><b><a href=\"http:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssa.201431088\/abstract\" target=\"_blank\">\u201cEnhanced performance of InGaN light-emitting diodes with InGaN\/GaN supperlattice and graded-composition InGaN\/GaN supperlattice interlayers\u201d<\/a><\/b>,<br \/>\nY. Yang and Y. Zeng, physica status solidi (a), Vol. 211, No. 7, 2014, doi:10.1002\/pssa.201431088<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007%2Fs00339-014-8321-7\" target=\"_blank\">\u201cEnhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers\u201d<\/a><\/b>,<br \/>\nY.-J. Yang and Y.-P. 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Ding, et al., SPIE Sensing Technology+ Applications, 2014, doi:10.1117\/12.2050089<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6799260\" target=\"_blank\">\u201cOn the Carrier Injection Efficiency and Thermal Property of InGaN\/GaN Axial Nanowire Light Emitting Diodes\u201d<\/a><\/b>,<br \/>\nS. Zhang, A. T. Connie, D. A. Laleyan, H. Pham Trung Nguyen, Q. Wang, J. Song, et al., Vol. 50 No. 6, 2014, doi:10.1109\/JQE.2014.2317732<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/104\/7\/10.1063\/1.4866041\" target=\"_blank\">\u201cOn the origin of the electron blocking effect by an n-type AlGaN electron blocking layer\u201d<\/a><\/b>,<br \/>\nZ.-H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. 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Basu, Optoelectronics, IET, Vol. 7, No. 3, 2013, doi:10.1049\/iet-opt.2012.0039<\/li>\n<li><b><a href=\"http:\/\/arxiv.org\/pdf\/1305.2512\" target=\"_blank\">\u201cComment on&#8221; Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop&#8221;[Phys. Rev. Lett. 110, 177406 (2013)]\u201d<\/a><\/b>,<br \/>\nF. Bertazzi, M. Goano, X. Zhou, M. Calciati, G. Ghione, M. Matsubara, et al., arXiv preprint arXiv:1305.2512, 2013<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/22\/8\/088401\" target=\"_blank\">\u201cEnhanced performance of InGaN\/GaN multiple quantum well solar cells with double indium content\u201d<\/a><\/b>,<br \/>\nZ. Bi-Jun, C. Xin, R. Zhi-Wei, T. Jin-Hui, W. Xing-Fu, L. Dan-Wei, et al., Chinese Physics B, Vol. 22, No. 8, 2013, doi:10.1088\/1674-1056\/22\/8\/088401<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/22\/8\/088503\" target=\"_blank\">\u201cPerformance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer\u201d<\/a><\/b>,<br \/>\nD. Bin-Bin, Z. Fang, S. Jing-Jing, X. Jian-Yong, Z. Shu-Wen, Z. Yun-Yan, et al., Chinese Physics B, Vol. 22, No. 8, 2013, doi:10.1088\/1674-1056\/22\/8\/088503<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6571210\" target=\"_blank\">\u201cEnhancing light output of GaN-based LEDs with graded-thickness barriers and wells\u201d<\/a><\/b>,<br \/>\nB. Cao, R. Hu, Z. Gan, and S. 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Kuo, Photonics Technology Letters, IEEE, Vol. 25, No. 1, 2013, doi:10.1109\/LPT.2012.2227700<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/ol\/abstract.cfm?uri=ol-38-16-3158\" target=\"_blank\">\u201cNumerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration\u201d<\/a><\/b>,<br \/>\nJ.-Y. Chang, F.-M. Chen, Y.-K. Kuo, Y.-H. Shih, J.-K. Sheu, W.-C. Lai, et al., Optics letters, Vol. 38, No. 16, 2013, doi:10.1364\/OL.38.003158<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6334407\" target=\"_blank\">\u201cSimulation of high-efficiency GaN\/InGaN pin solar cell with suppressed polarization and barrier effects\u201d<\/a><\/b>,<br \/>\nJ.-Y. Chang, S.-H. Yen, Y.-A. Chang, and Y.-K. Kuo, Quantum Electronics, IEEE Journal of, Vol. 49, No. 1, 2013, doi:10.1109\/JQE.2012.2225601<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6472726\" target=\"_blank\">\u201cNumerical simulation of GaN-based LEDs with chirped multiquantum barrier structure\u201d<\/a><\/b>,<br \/>\nS. Chang, Y. Lin, C. Liu, T. Ko, S. Hon, and S. Li, Quantum Electronics, IEEE Journal of, Vol. 49, No. 4, 2013, doi:10.1109\/JQE.2013.2250919<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6633118\" target=\"_blank\">\u201cEfficiency enhancement in InGaN\/GaN light-emitting diodes by decreasing the thickness of last barrier\u201d<\/a><\/b>,<br \/>\nL.-W. Cheng, Y. Sheng, C.-S. Xia, and W.-D. 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Li, et al., Selected Topics in Quantum Electronics, IEEE Journal of, Vol. 19, No. 4, 2013, doi:10.1109\/JSTQE.2012.2237015<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6744885\" target=\"_blank\">\u201cInfluence of barrier thickness modulation of InGaN\/GaN MQW solar cells\u201d<\/a><\/b>,<br \/>\nC.-C. Hsieh, F.-I. Lai, and H.-W. Wang, Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, doi:10.1109\/PVSC.2013.6744885<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6744965\" target=\"_blank\">\u201cEmbedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell\u201d<\/a><\/b>,<br \/>\nL.-H. Hsu, C.-C. Lin, M.-H. Tan, Y.-L. Yeh, D.-W. Lin, H.-V. 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Kuo, et al., CLEO: QELS_Fundamental Science, 2013, doi:10.1364\/CLEO_AT.2013.JW2A.94<\/li>\n<li><b><a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S0030402613005779\" target=\"_blank\">\u201cAdvantage of InGaN-based light-emitting diodes using AlGaInN electron blocking layer coupled with inserting InGaN layer\u201d<\/a><\/b>,<br \/>\nT.-H. Wang and J.-L. Xu, Optik-International Journal for Light and Electron Optics, Vol. 124, No. 22, 2013, doi:10.1016\/j.ijleo.2013.04.065<\/li>\n<li><b><a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S136980011300320X\" target=\"_blank\">\u201cAdvantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer\u201d<\/a><\/b>,<br \/>\nT.-H. Wang and J.-L. Xu, Materials Science in Semiconductor Processing, Nov. 2013, doi:10.1016\/j.mssp.2013.10.026<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/22\/4\/047801\" target=\"_blank\">\u201cOptical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters\u201d<\/a><\/b>,<br \/>\nY. Wei, W. Yi-Yang, L. Ning-Yang, L. Lei, C. Zhao, and H. Xiao-Dong, Chinese Physics B, Vol. 22, No. 4, 2013, doi:10.1088\/1674-1056\/22\/4\/047801<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/22\/7\/076803\" target=\"_blank\">\u201cEffects of a prestrained InGaN interlayer on the emission properties of InGaN\/GaN multiple quantum wells in a laser diode structure\u201d<\/a><\/b>,<br \/>\nC. Wen-Yu, H. Yong-Fa, C. Zhao, Y. Wei, D. Wei-Min, and H. Xiao-Dong, Chinese Physics B, Vol. 22, No. 7, 2013, doi:10.1088\/1674-1056\/22\/7\/076803<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/102\/1\/10.1063\/1.4774091\" target=\"_blank\">\u201cEffect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes\u201d<\/a><\/b>,<br \/>\nC. S. Xia, Z. S. Li, Z. Li, and Y. Sheng, Applied Physics Letters, Vol. 102, No. 1, 2013, doi:10.1063\/1.4774091<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6633113\" target=\"_blank\">\u201cEffect of last barrier on efficiency improvement of blue InGaN\/GaN light-emitting diodes\u201d<\/a><\/b>,<br \/>\nC. S. Xia, Z. S. Li, and Y. Sheng, Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109\/NUSOD.2013.6633113<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/103\/23\/10.1063\/1.4839417\" target=\"_blank\">\u201cOn the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes\u201d<\/a><\/b>,<br \/>\nC. S. Xia, Z. S. Li, and Y. Sheng, Applied Physics Letters, Vol. 103, No. 23, 2013, doi:10.1063\/1.4839417<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007%2Fs11082-012-9647-z\" target=\"_blank\">\u201cSimulation of InGaN\/GaN light-emitting diodes with a non-local quantum well transport model\u201d<\/a><\/b>,<br \/>\nC. S. Xia, Z. S. Li, Y. Sheng, L. W. Cheng, W. Da Hu, and W. Lu, Optical and Quantum Electronics, Vol. 45, No. 7, 2013, doi:10.1007\/s11082-012-9647-z<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/22\/9\/098504\" target=\"_blank\">\u201cEfficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers\u201d<\/a><\/b>,<br \/>\nW. Xing-Fu, T. Jin-Hui, Z. Bi-Jun, C. Xin, R. Zhi-Wei, L. Dan-Wei, et al., Chinese Physics B, Vol. 22, No. 9, 2013, doi:10.1088\/1674-1056\/22\/9\/098504<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007%2Fs00339-013-7923-9\" target=\"_blank\">\u201cInvestigation of blue InGaN light-emitting diodes with p-AlGaN\/InGaN superlattice interlayer\u201d<\/a><\/b>,<br \/>\nJ.-Y. Xiong, Y.-Q. Xu, B.-B. Ding, F. Zhao, J.-J. Song, S.-W. Zheng, et al., Applied Physics A, Vol. 113, No. 2, 2013, doi:10.1007\/s00339-013-7923-9<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/jap\/114\/13\/10.1063\/1.4824461\" target=\"_blank\">\u201cInvestigation of blue InGaN light-emitting diodes with AlGaN barriers of the increasing Al composition\u201d<\/a><\/b>,<br \/>\nJ.-Y. Xiong, F. Zhao, B.-B. Ding, S.-W. Zheng, T. Zhang, and G.-H. Fan, Journal of Applied Physics, Vol. 114, No. 13, 2013, doi:10.1063\/1.4824461<\/li>\n<li><b><a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S1386947713000635\" target=\"_blank\">\u201cEfficiency droop improvement for InGaN-based light-emitting diodes with gradually increased In-composition across the active region\u201d<\/a><\/b>,<br \/>\nJ. Xu and T. Wang, Physica E: Low-dimensional Systems and Nanostructures, Vol. 52, No. 2013, doi:10.1016\/j.physe.2013.03.004<\/li>\n<li><b><a href=\"http:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssc.201200637\/abstract\" target=\"_blank\">\u201cAdvantage of tapered and graded AlGaN electron blocking layer in InGaN\u2010based blue laser diodes\u201d<\/a><\/b>,<br \/>\nW. Yang, D. Li, J. He, and X. Hu, physica status solidi (c), Vol. 10, No. 3, 2013, doi:10.1002\/pssc.201200637<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/103\/19\/10.1063\/1.4829443\" target=\"_blank\">\u201cEfficient collection of photogenerated carriers by inserting double tunnel junctions in III-nitride pin solar cells\u201d<\/a><\/b>,<br \/>\nY.-C. Yao, M.-T. Tsai, C.-Y. Huang, T.-Y. Lin, J.-K. Sheu, and Y.-J. Lee, Applied Physics Letters, Vol. 103, No. 19, 2013, doi:10.1063\/1.4829443<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007%2Fs11082-013-9850-6\" target=\"_blank\">\u201cDesign of spectral crosstalk suppressing structure in two-color HgCdTe infrared focal plane arrays detector\u201d<\/a><\/b>,<br \/>\nZ. Ye, P. Zhang, Y. Li, Y. Chen, S. Zhou, Y. Huang, et al., Optical and Quantum Electronics, Nov. 2013, doi:10.1007\/s11082-013-9850-6<\/li>\n<li><b><a href=\"http:\/\/rspa.royalsocietypublishing.org\/content\/469\/2151\/20120652\" target=\"_blank\">\u201cInGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer \u201d<\/a><\/b>,<br \/>\nX. Yi, H. Zhu, G. Wang, L. Wang, Y. Zhang, X. Li, et al., March 2013, doi:10.1098\/rspa.2012.0652<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1612-202X\/10\/4\/045802\" target=\"_blank\">\u201cDesign and analysis of high-temperature operating 795 nm VCSELs for chip-scale atomic clocks\u201d<\/a><\/b>,<br \/>\nJ. Zhang, Y. Ning, Y. Zeng, J. Zhang, J. Zhang, X. Fu, et al., Laser Physics Letters, Vol. 10, No. 4, 2013, doi:10.1088\/1612-2011\/10\/4\/045802<\/li>\n<li><b><a href=\"http:\/\/proceedings.spiedigitallibrary.org\/proceeding.aspx?articleid=1739447\" target=\"_blank\">\u201cHigh temperature operating (&gt; 80\u00b0 C) 795-nm VCSEL based on InAlGaAs MQWs active region\u201d<\/a><\/b>,<br \/>\nJ. Zhang, Y. Ning, J. Zhang, X. Zhang, and L. Wang, ISPDI 2013-Fifth International Symposium on Photoelectronic Detection and Imaging, doi:10.1117\/12.2032212<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?reload=true&amp;arnumber=6584764\" target=\"_blank\">\u201cThe advantages of AlGaN-based UV-LEDs inserted with a p-AlGaN layer between the EBL and active region\u201d<\/a><\/b>,<br \/>\nJ. Zhang, W. Tian, F. Wu, W. Yan, H. Xiong, J. Dai, et al., Aug. 2013, doi:10.1109\/JPHOT.2013.2278520<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/abstract.cfm?uri=N3-2013-NSa3A.32\" target=\"_blank\">\u201cAsymmetric Heterostructure with Broad Waveguide for 1.06\u03bcm Range High-Power Laser Diodes\u201d<\/a><\/b>,<br \/>\nY. ZHANG, T. LI, E. HAO, R. CHEN, and Y. WANG, Nanophotonics, Nanoelectronics and Nanosensor 2013, doi:10.1364\/N3.2013.NSa3A.32<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/jap\/113\/1\/10.1063\/1.4772669\" target=\"_blank\">\u201cEffects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes\u201d<\/a><\/b>,<br \/>\nY. Zhang, H. Zheng, E. Guo, Y. Cheng, J. Ma, L. Wang, et al., Journal of Applied Physics, Vol. 113, No. 1, 2013, doi:10.1063\/1.4772669<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6243152\" target=\"_blank\">\u201cOn the effect of step-doped quantum barriers in InGaN\/GaN light emitting diodes\u201d<\/a><\/b>,<br \/>\nZ.-H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, et al., Display Technology, Journal of, Vol. 9, No. 4, 2013, doi:10.1109\/JDT.2012.2204858<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/102\/19\/10.1063\/1.4806978\" target=\"_blank\">\u201cInGaN\/GaN light-emitting diode with a polarization tunnel junction\u201d<\/a><\/b>,<br \/>\nZ.-H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, et al., Applied Physics Letters, Vol. 102, No. 19, 2013, doi:10.1063\/1.4806978<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-4926\/34\/5\/054008\" target=\"_blank\">\u201cImprovement of carrier distribution in dual wavelength light-emitting diodes\u201d<\/a><\/b>,<br \/>\nS. Zhao, W. Tongbo, Z. Ning, M. Jun, W. Junxi, and L. Jinmin, Journal of Semiconductors, Vol. 34, No. 5, 2013, doi:10.1088\/1674-4926\/34\/5\/054008<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-4926\/34\/1\/014002\" target=\"_blank\">\u201cAnalysis of the subthreshold characteristics of vertical tunneling field effect transistors\u201d<\/a><\/b>,<br \/>\nH. Zhongfang, R. Guoping, and R. Gang, Journal of Semiconductors, Vol. 34, No. 1, 2013, doi:10.1088\/1674-4926\/34\/1\/014002<\/li>\n<li><b><a href=\"http:\/\/www.scientific.net\/AMM.389.383\" target=\"_blank\">\u201cOptimized Design and Performance Research of the High-Voltage LEDs Chipset\u201d<\/a><\/b>,<br \/>\nM. J. Zhu, H. Y. Huang, Z. Y. Guo, and D. X. Cao, Applied Mechanics and Materials, Vol. 389, No. 2013, doi:10.4028\/www.scientific.net\/AMM.389.383<\/li>\n<\/ul>\n<h2>2012<\/h2>\n<ul class=\"publist\">\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?reload=true&amp;arnumber=6379888\" target=\"_blank\">\u201cParametric optimization on optical properties of long-wavelength GaInNAs quantum well lasers\u201d<\/a><\/b>,<br \/>\nM. Alias, F. Maskuriy, F. Faiz, and S. Mitani, Photonics (ICP), 2012 IEEE 3rd International Conference on, doi:10.1109\/ICP.2012.6379888<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6482065\" target=\"_blank\">\u201cDesign and fabrication of long-wavelength GaInNAs quantum well edge-emitting lasers\u201d<\/a><\/b>,<br \/>\nM. Alias, F. Maskuriy, F. Faiz, and S. Mitani, Computer Applications and Industrial Electronics (ISCAIE), 2012 IEEE Symposium on, doi:10.1109\/ISCAIE.2012.6482065<\/li>\n<li><b><a href=\"http:\/\/pubs.rsc.org\/en\/Content\/ArticleLanding\/2012\/EE\/C2EE22167E\" target=\"_blank\">\u201cMultiple-bandgap vertical-junction architectures for ultra-efficient concentrator solar cells\u201d<\/a><\/b>,<br \/>\nA. Braun, A. Vossier, E. A. Katz, N. J. Ekins-Daukes, and J. M. Gordon, Energy Environ. Sci., Vol. 5, No. 9, 2012, doi:10.1039\/C2EE22167E<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/ol\/abstract.cfm?uri=ol-37-9-1574\" target=\"_blank\">\u201cInfluence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes\u201d<\/a><\/b>,<br \/>\nJ.-Y. Chang and Y.-K. Kuo, Optics letters, Vol. 37, No. 9, 2012, doi:10.1364\/OL.37.001574<\/li>\n<li><b><a href=\"http:\/\/eric.ed.gov\/?id=EJ989273\" target=\"_blank\">\u201cProject-Based Learning with an Online Peer Assessment System in a Photonics Instruction for Enhancing LED Design Skills\u201d<\/a><\/b>,<br \/>\nS.-H. Chang, T.-C. Wu, Y.-K. Kuo, and L.-C. You, Turkish Online Journal of Educational Technology-TOJET, Vol. 11, No. 4, 2012,<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/100\/25\/10.1063\/1.4729880\" target=\"_blank\">\u201cInvestigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer\u201d<\/a><\/b>,<br \/>\nY.-A. Chang, J.-Y. Chang, Y.-T. Kuo, and Y.-K. Kuo, Applied Physics Letters, Vol. 100, No. 25, 2012, doi:10.1063\/1.4729880<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6041114\" target=\"_blank\">\u201cDesign of strain compensated InGaAs\/GaAsSb type-II quantum well structures for mid-infrared photodiodes\u201d<\/a><\/b>,<br \/>\nB. Chen, W. Jiang, and A. Holmes Jr, Optical and Quantum Electronics, Vol. 44, No. 3-5, 2012, doi:10.1109\/NUSOD.2011.6041114<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/col\/abstract.cfm?uri=col-10-6-062302\" target=\"_blank\">\u201cInvestigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells\u201d<\/a><\/b>,<br \/>\nJ. Chen, G. Fan, W. Pang, S. Zheng, and Y. Zhang, Chinese Optics Letters, Vol. 10, No. 6, 2012,<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6336785\" target=\"_blank\">\u201cImprovement of efficiency droop in blue InGaN light-emitting diodes with p-InGaN\/GaN superlattice last quantum barrier\u201d<\/a><\/b>,<br \/>\nJ. Chen, G.-H. Fan, W. Pang, S.-W. Zheng, and Y.-Y. Zhang, Photonics Technology Letters, IEEE, Vol. 24, No. 24, 2012, doi:10.1109\/LPT.2012.2225421<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6316230\" target=\"_blank\">\u201c1.47 \u03bcm high characteristic temperature InGaAsP\/InP MQW laser\u201d<\/a><\/b>,<br \/>\nW. Chen, L. Li, J. Zhao, Y. Wang, T. Li, P. Lu, et al., Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109\/ICoOM.2012.6316230<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007%2Fs11082-011-9534-z\" target=\"_blank\">\u201cStudy on GaN-based light emitting diode with InGaN\/GaN\/InGaN multi-layer barrier\u201d<\/a><\/b>,<br \/>\nL.-W. Cheng, C.-Y. Xu, Y. Sheng, C.-S. Xia, W.-D. Hu, and W. Lu, Optical and Quantum Electronics, Vol. 44, No. 3-5, 2012, doi:10.1007\/s11082-011-9534-z<\/li>\n<li><b><a href=\"http:\/\/proceedings.spiedigitallibrary.org\/proceeding.aspx?articleid=1385264\" target=\"_blank\">\u201cReduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier\u201d<\/a><\/b>,<br \/>\nC.-H. Chiu, P.-M. Tu, J.-R. Chang, W.-T. Chang, H.-C. Kuo, and C.-Y. Chang, SPIE OPTO 2012, doi:10.1117\/12.912226<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6318211\" target=\"_blank\">\u201cModeling the optical and electrical response of nanostructured III\u2013V solar cells\u201d<\/a><\/b>,<br \/>\nK. Driscoll and S. Hubbard, Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE, doi:10.1109\/PVSC.2012.6318211<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6316505\" target=\"_blank\">\u201cPhysical model of an optical memory cell with coupling quantum dots\u201d<\/a><\/b>,<br \/>\nL. Fan and F. Guo, Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on, doi:10.1109\/NUSOD.2012.6316505<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6179305\" target=\"_blank\">\u201cGaInAsP\/InP Lateral Current Injection Laser With Uniformly Distributed Quantum-Well Structure\u201d<\/a><\/b>,<br \/>\nM. Futami, T. Shindo, T. Koguchi, K. Shinno, T. Amemiya, N. Nishiyama, et al., Photonics Technology Letters, IEEE, Vol. 24, No. 11, 2012, doi:10.1109\/LPT.2012.2190053<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6316236\" target=\"_blank\">\u201cThe simulation analysis of GaInAsP\/GaInP diode lasers emitting at 808 nm\u201d<\/a><\/b>,<br \/>\nK. Gai, L. Li, J. Zhao, Y. Wang, T. Li, P. Lu, et al., Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109\/ICoOM.2012.6316236<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/21\/8\/086105\" target=\"_blank\">\u201cAn AlGaN\/GaN HEMT with a reduced surface electric field and an improved breakdown voltage\u201d<\/a><\/b>,<br \/>\nX. Gang, E. Xu, N. Hashemi, Z. Bo, F. Y. Fu, and W. T. Ng, Chinese Physics B, Vol. 21, No. 8, 2012, doi:10.1088\/1674-1056\/21\/8\/086105<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/0268-1242\/27\/1\/015003\" target=\"_blank\">\u201cElectrical, spectral and optical performance of yellow\u2013green and amber micro-pixelated InGaN light-emitting diodes\u201d<\/a><\/b>,<br \/>\nZ. Gong, N. Liu, Y. Tao, D. Massoubre, E. Xie, X. Hu, et al., Semiconductor Science and Technology, Vol. 27, No. 1, 2012, doi:10.1088\/0268-1242\/27\/1\/015003<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6238058\" target=\"_blank\">\u201cAlInAs selective oxidation for GaInAsP\/Si hybrid semiconductor laser using surface activated bonding\u201d<\/a><\/b>,<br \/>\nY. Hayashi, R. Osabe, K. Fukuda, N. Nishiyama, and S. Arai, Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on, doi:10.1109\/LTB-3D.2012.6238058<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/21\/11\/118502\" target=\"_blank\">\u201cEfficiency enhancement of InGaN based blue light emitting diodes with InGaN\/GaN multilayer barriers\u201d<\/a><\/b>,<br \/>\nT. Jin-Hui, L. Shu-Ti, L. Tai-Ping, L. Chao, W. Hai-Long, W. 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Chao-qun, et al., Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109\/ICoOM.2012.6316235<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"<p>2014 \u201cCorrelating electroluminescence characterization  [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"parent":448,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages\/908"}],"collection":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/comments?post=908"}],"version-history":[{"count":0,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages\/908\/revisions"}],"up":[{"embeddable":true,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages\/448"}],"wp:attachment":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/media?parent=908"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}