{"id":313,"date":"2014-01-20T19:39:22","date_gmt":"2014-01-20T19:39:22","guid":{"rendered":"http:\/\/www.crosslightsoftware.ca\/?page_id=313"},"modified":"2014-01-20T19:39:22","modified_gmt":"2014-01-20T19:39:22","slug":"publications-before-2006","status":"publish","type":"page","link":"https:\/\/crosslight.com.cn\/wordpress\/publications\/publications-before-2006","title":{"rendered":"2006\u5e74\u4ee5\u524d\u7684\u671f\u520a\u8bba\u6587"},"content":{"rendered":"<h2>2005<\/h2>\n<ul>\n<li>Simon Li, Z.Q. Li, O. Shmatov, C. S. Xia and W. Lu,<br \/>\n<b><a href=\"mrs_06fall3.pdf\" target=\"_blank\">&#8220;3-D simulations on realistic GaN-based light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nProceedings of MRS 05 Fall, &#8220;GaN, AlN, InN, and related materials&#8221;<\/li>\n<li>Yi-An Chang, Jun-Rong Chen, Hao-Chung Kuo, Yen-Kuang Kuo, and Shing-Chung Wang, Accepted 8 September 2005,<br \/>\n<b>&#8220;Theoretical and experimental analysis on InAlGaAs\/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers&#8221;<\/b>,<br \/>\nto be published in IEEE Journal of Lightwave Technology. (SCI, EI)<\/li>\n<li>Yi-An Chang, Sheng-Horng Yen, De-Chung Wang, Hao-Chung Kuo, Yen-Kuang Kuo, and Shing-Chung Wang, 2005,<br \/>\n<b>&#8220;Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diode&#8221;<\/b>,<br \/>\nsubmitted to IEEE Journal of Quantum Electronics. (revised) (SCI, EI)<\/li>\n<li>Yen-Kuang Kuo, Shang-Wei Hsieh, and Hsiu-Fen Chen, 2005,<b><br \/>\n&#8220;Numerical study on optimization of active regions for 1.3-um AlGaInAs and InGaAsN material systems&#8221;<\/b>,<br \/>\nto be published in Japanese Journal of Applied Physics. (accepted with optional revisions) (SCI, EI)<\/li>\n<li>Yi-An Chang, Chuan-Yu Luo, Hao-Chung Kuo, Yen-Kuang Kuo, Chia-Feng Lin, and Shing-Chung Wang, 15 November 2005,<br \/>\n<b>&#8220;Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer&#8221;<\/b>,<br \/>\nto be published in Japanese Journal of Applied Physics, Vol. 44, No. 11 on 15 November 2005. (SCI, EI)<\/li>\n<li>Man-Fang Huang, Meng-Lun Tsai, Jen-Yuan Shin, Yu-Lung Sun, Ray-Min Yang, and Yen-Kuang Kuo, Published online 24 May 2005,<br \/>\n<b>&#8220;Optimization of active layer structures to minimize leakage current for AlGaInP laser diode&#8221;<\/b>,<br \/>\nApplied Physics A: Materials Science &amp; Processing (Publisher: Springer-Verlag GmbH; ISSN: 0947-8396 (Paper) 1432-0630 (Online); DOI: 10.1007\/s00339-005-3258-5; Issue: Online First). (SCI, EI)<\/li>\n<li>Yi-An Chang, Hao-Chung Kuo, Chun-Yi Lu, Yen-Kuang Kuo, and Shing-Chung Wang, 27 April 2005,<br \/>\n<b>&#8220;Improving high temperature performance in continuous-wave mode InGaAsN\/GaAsN ridge waveguide lasers&#8221;<\/b>,<br \/>\nSemiconductor Science and Technology, Vol. 20, pp. 601-605. (SCI, EI)<\/li>\n<li>Man-Fang Huang, Meng-Lun Tsai, and Yen-Kuang Kuo, January 2005,<b><br \/>\n&#8220;Improvement of characteristic temperature for AlGaInP laser diodes&#8221;<\/b>,<br \/>\nProceedings of SPIE, Vol. 5628 (Semiconductor Lasers and Applications II), pp. 127-134. (EI) (invited paper)<\/li>\n<li>Sheng-Horng Yen, Bo-Ting Liou, Mei-Ling Chen, and Yen-Kuang Kuo, January 2005,<br \/>\n<b>&#8220;Thermal and piezoelectric effects on optical properties of violet-blue InGaN lasers&#8221;<\/b>,<br \/>\nProceedings of SPIE, Vol. 5628 (Semiconductor Lasers and Applications II), pp. 156-163. (EI)<\/li>\n<li>Shang-Wei Hsieh, Hsiu-Fen Chen, and Yen-Kuang Kuo, January 2005,<br \/>\n<b>&#8220;Simulation of 1.3-mm AlGaInAs\/InP strained MQW lasers&#8221;<\/b>,<br \/>\nProceedings of SPIE, Vol. 5628 (Semiconductor Lasers and Applications II), pp. 318-326. (EI)<\/li>\n<li>Yen-Kuang Kuo, Shang-Wei Hsieh, Hsiu-Fen Chen, Mei-Ling Chen, and Bo-Ting Liou, 2005,<br \/>\n<b>&#8220;Numerical study on 1.3-um semiconductor lasers with variant active region materials&#8221;<\/b>,<br \/>\nto be submitted to Optics Communications. (SCI, EI)<\/li>\n<li><b>&#8220;Device Physics of an Optoelectronic Integrated Wavelength Converter,&#8221;<\/b><br \/>\n(invited), J. Piprek, V. Lal, J. Hutchinson, A. Tauke Pedretti, M. Dummer, and L. Coldren, SPIE <em>Photonics West<\/em> conference on <em>Optoelectronic Integrated Circuits IX, <\/em>San Jose, CA, 2005.<\/li>\n<li><b>&#8220;Temperature Dependence of the Relaxation Resonance Frequency of Long-Wavelength Vertical-Cavity Lasers,<br \/>\n&#8220;<\/b> Bjorlin, E.S.; Geske, J.; Mehta, M.; Piprek, J.; Bowers, J.E.; IEEE Photonics Technology Letters, Volume 17, Issue 5, May 2005, Page(s):944 &#8211; 946.<\/li>\n<li><b>&#8220;Analysis of InGaN\/GaN VCSELs,&#8221;<\/b><br \/>\nJ.Piprek, R. Farrell, S. DenBaars, S. Nakamura, in: Proc. IEEE\/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Berlin, Germany, 2005.<\/li>\n<li><b>&#8220;Device Physics of an Optoelectronic Integrated Wavelength Converter,&#8221;<\/b><br \/>\nJ. Piprek, V. Lal, J. Hutchinson, A. Tauke Pedretti, M. Dummer, and L. Coldren, in: Optoelectronic Integrated Circuits IX, SPIE Proc. 5729, 2005.<\/li>\n<li><b>&#8220;GaN-based Light Emitting Diodes,&#8221;<\/b><br \/>\nJ. Piprek and S. Li, Chapter 10 in: Optoelectronic Devices: Advanced Simulation and Analysis, ed. by J. Piprek, Springer Verlag, New York, 2005.<\/li>\n<li><b>&#8220;Monolithic Wavelength Converter: Many-Body Effects and Saturation Analysis,&#8221;<\/b><br \/>\nJ. Piprek, S. Li, P. Mensz, and J. Hader, Chapter 14 in: Optoelectronic Devices &#8211; Advanced Simulation and Analysis, ed. by J. Piprek, Springer Verlag, New York, 2005.<\/li>\n<li><b>&#8220;Broadband Rate-Equation Model including Many-Body Gain for WDM Traveling-Wave SOAs,&#8221;<\/b><br \/>\nV. Lal, W. Donat, A. Tauke Pedretti, L. Coldren, D. Blumenthal, and J. Piprek; in: Proc. IEEE\/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Berlin, Germany, 2005.<\/li>\n<li><b>&#8220;Piezoelectric and thermal effects on optical properties of violet-blue InGaN lasers,&#8221;<\/b><br \/>\nSheng-Horng Yen, Bo-Ting Liou, Mei-Ling Chen, Yen-Kuang Kuo, Semiconductor Lasers and Applications II, edited by Jian-quan Yao,Yung Jui Chen, Seok Lee, Proceedings of SPIE Vol. 5628 (SPIE,Bellingham, WA, 2005), p. 156.<\/li>\n<li><b>&#8220;Ultrafast Gain Dynamics in Asymmetrical Multiple Quantum-Well Semiconductor Optical Amplifiers,&#8221;<\/b><br \/>\nVladimir V. Lysak, Hitoshi Kawaguchi, Igor A. Sukhoivanov, Takeo Katayama, and Aleksey V. Shulika, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 41, NO. 6, JUNE 2005, p.797.<\/li>\n<li><b>&#8220;Design and Fabrication of Low Beam Divergence and High Kink-Free Power Lasers,&#8221;<\/b><br \/>\nBocang Qiu, Stewart D. McDougall, Xuefeng Liu, Gianluca Bacchin, and John H. Marsh IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 41, NO. 9, SEPTEMBER 2005, p. 1124.<\/li>\n<li><b>&#8220;Comparison between a graded and step-index optical cavity in InGaN MQW laser diodes,&#8221;<br \/>\n<\/b>Juan A Martyn1 and M Sanchez, Semicond. Sci. Technol. 20 (2005) pp. 290-295.<\/li>\n<li><b>&#8220;Simulation of 1.3-|m AlGaInAs\/InP strained MQW lasers,&#8221;<\/b><br \/>\nShang-Wei Hsieha, Hsiu-Fen Chena, Ming-Wei Yaob, Yen-Kuang Kuo, Semiconductor Lasers and Applications II, edited by Jian-quan Yao, Yung Jui Chen, Seok Lee, Proceedings of SPIE Vol. 5628 (SPIE, Bellingham, WA, 2005), p. 318.<\/li>\n<li>&#8220;<b>EFFICIENCY DEGRADATION DUE TO CARRIER BUILD-UP IN THE BROADENED WAVEGUIDES OF HIGH-POWER LASER DIODES: ANALYTICAL THEORY AND NUMERICAL VALIDATION,&#8221;<br \/>\n<\/b>Eugene A. Avrutin and Boris S. Ryvkin, Proc. IEEE\/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Berlin, Germany, 2005<\/li>\n<li>&#8220;<b>Numerical Simulation of Composition Grading in Active Layer of Quantum Well Lasers<\/b>,&#8221;<br \/>\nZ. S. Li and P.M. Mensz, Proc. IEEE\/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Berlin, Germany, 2005<\/li>\n<li>&#8220;<b>Generation-recombination effects on dark currents in CdTe-passivated midwave infrared HgCdTe photodiodes,<\/b>&#8221; A. Jozwikowska, K.<br \/>\nJozwikowski, J. Antoszewski, C. A. Musca, T. Nguyen, R. H. Sewell, J. M. Dell, and L. Faraone JOURNAL OF APPLIED PHYSICS 98, 014504<br \/>\n(2005)<\/li>\n<li>&#8220;<b>Current crowding in graded contact layers of intracavity-contacted oxide-confined vertical-cavity surface-emitting lasers<\/b>,&#8221;<br \/>\nV. Lysak, K. S. Chang, and Y. T. Lee, APPLIED PHYSICS LETTERS 87, 231118 (2005)<\/li>\n<li>&#8220;<b>Self-heating study of an AlGaN\/GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering<\/b>,&#8221;<br \/>\nI. Ahmad, V. Kasisomayajula, and M. Holtza, J. M. Berg, S. R. Kurtz, C. P. Tigges, A. A. Allerman, and A. G. Baca, APPLIED PHYSICS LETTERS 86, 173503 (2005)<\/li>\n<li>&#8220;<b>Numerical simulation of long wavelength photovoltaic HgCdTe photodiodes,<\/b>&#8221;<br \/>\nXiang Yan Xu Wei Lu Xiao Shuang Chen Xue Chu Shen, The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz, 19-23 Sept. 2005, Volume: 1, On page(s): 156- 157 vol. 1<\/li>\n<li>&#8220;<b>Influence of nonuniform temperature distribution on reflection spectrum of top mirror in intracavity-contacted oxide-confined VCSELs<\/b>,&#8221;<br \/>\nDyomin, A.A. Lysak, V.V. Zinkovska, I.O., 7th International Conference on Laser and Fiber-Optical Networks Modeling, 2005. Proceedings of LFNM 2005. 15-17 Sept. 2005, On page(s): 143- 146<\/li>\n<li>&#8220;<b>Geometrical, optimization of intracavity contacted oxide confined vertical cavity surface emitting lasers,&#8221;<br \/>\n<\/b>Lysak, V.V. Ki Soo Chang Yong Tak Lee, This paper appears in: Laser and Fiber-Optical Networks Modeling, 2005. Proceedings of LFNM 2005. 7th International Conference on Publication Date: 15-17 Sept. 2005 On page(s): 140- 142<\/li>\n<\/ul>\n<h2>2004<\/h2>\n<ul>\n<li>Yen-Kuang Kuo and Yi-An Chang, May 2004,<br \/>\n<b>&#8220;Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance&#8221;<\/b>,<br \/>\nIEEE Journal of Quantum Electronics, Vol. 40, No. 5, pp. 437-444. (SCI, EI)<\/li>\n<li>Yen-Kuang Kuo, Bo-Ting Liou, Mei-Ling Chen, Sheng-Horng Yen, and Cheng-Yang Lin, 15 February 2004,<br \/>\n<b>&#8220;Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics&#8221;<\/b>,<br \/>\nOptics Communications, Vol. 231, Issues 1-6, pp. 395-402. (SCI, EI)<\/li>\n<li><b>&#8220;Improvement of Kink-Free Output Power by Using Highly Resistive Regions in Both Sides of the Ridge Stripe for 980-nm Laser Diodes,&#8221;<br \/>\n<\/b>Masahiro Yuda,Takuo Hirono, Member, IEEE, Atsuo Kozen, and Chikara Amano, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 40, NO. 9, SEPTEMBER 2004, p. 1203.<\/li>\n<li><b>&#8220;Degradation mechanism limiting the lifetime of ZnSe-based white light-emitting diodes,&#8221;<br \/>\n<\/b>Koji Katayama and Takao Nakamura ,JOURNAL OF APPLIED PHYSICS VOLUME 95, NUMBER 7 1 APRIL 2004, p. 3576.<\/li>\n<li><b>&#8220;Design and Optimization of High-Performance 1.3 |m VCSELs,&#8221;<\/b><br \/>\nJoachim Piprek, Manish Mehta, and Vijay Jayaraman, in: Physics and Simulation of Optoelectronic Devices XII, SPIE Proc. 5349, 2004.<\/li>\n<li><b>&#8220;Internal Efficiency Analysis of 280 nm Light Emitting Diodes,&#8221;<\/b><br \/>\nJ. Piprek, C. Moe, S. Keller, S. Nakamura, and S. P. DenBaars, SPIE Optics East, Conf. on Physics and Applications of Optoelectronic Devices, Philadelphia, October 2004.<\/li>\n<li><b>&#8220;Saturation Analysis of a Monolithic Wavelength Converter,&#8221;<br \/>\n<\/b>J. Piprek, John Hutchinson, Jeffrey Henness, Milan Masanovic, and Larry A. Coldren, SPIE Optics East, Conf. on Physics and Applications of Optoelectronic Devices, Philadelphia, October 2004.<\/li>\n<li><b>&#8220;Simulation of GaN-based Light Emitting Devices&#8221;<\/b> (invited),<br \/>\nJ. Piprek, IEEE\/EDS Int. Conf. on Simulation of Semiconductor Processes and Devices, Munich, Germany, September 2004.<\/li>\n<li><b>&#8220;Many-Body Effects on InP-based Optoelectronic Wavelength Converters for WDM Applications&#8221;<\/b> (postdeadline),<br \/>\nJ. Piprek, John Hutchinson, Jeff Henness, Larry Coldren, and J?rg Hader; 4th IEEE\/LEOS Int. Conf. on<em> Numerical Simulation of Optoelectronic Devices<\/em>, Santa Barbara, August 2004.<\/li>\n<li><b>&#8220;Carrier Loss Analysis for Ultraviolet Light Emitting Diodes&#8221;<\/b>,<br \/>\nJ. Piprek, Thomas Katona, Stacia Keller, Steve DenBaars, and Shuji Nakamura; 4th IEEE\/LEOS Int. Conf. on<em> Numerical Simulation of Optoelectronic Devices<\/em>, Santa Barbara, August 2004.<\/li>\n<li>Zhi-qiang Li, Vivian Zhou, Simon Li, T. Sudersena Rao, W.Y. Jiang, S.P. Watkins,<br \/>\n<b>&#8220;Chemical kinetics and design of gas inlets for III-V growth by MOVPE in a quartz showerhead reactor ,&#8221;<br \/>\n<\/b>J. Crystal Growth, vol. 272, 2004,pp. 47-51.<\/li>\n<li><b>&#8220;Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance &#8221;<br \/>\n<\/b>Yen-Kuang Kuo and Yi-An Chang, IEEE J. Quant. Electron., Vol. 40, No. 5, May 2004, pp. 437-444.<\/li>\n<li><b>&#8220;Design optimization of InGaAsP-InGaAlAs 1.55 |m strain-compensated MQW lasers for direct modulation applications.&#8221;<br \/>\n<\/b>M Nadeem Akram, Christofer Silfvenius, Olle Kjebon and Richard Schatz, Semicond. Sci. Technol. 19 No 5(May 2004) 615-625.<\/li>\n<li><b>&#8220;GaN-based Light Emitting Diode &#8221;<br \/>\n<\/b>J. Piprek and S. Li, Chapter 10 in: Optoelectronic Devices &#8211; Advanced Simulation and Analysis, ed. by J. Piprek, Springer Verlag, New York, 2004.<\/li>\n<li><b>&#8220;Monolithic Wavelength Converter: Many-Body Effects and Saturation Analysis&#8221;<br \/>\n<\/b>J. Piprek, S. Li, P. Mensz, and J. Hader, Chapter 14 in: Optoelectronic Devices &#8211; Advanced Simulation and Analysis, ed. by J. Piprek, Springer Verlag, New York, 2004.<\/li>\n<li><b>&#8220;Quantum-mechanical modeling and characterization of direction tunneling in thin-oxide MOSFET,&#8221;<\/b><br \/>\nYiming Li, Simon Z. Li, Jam-Wen Lee and Peter Mensz, Proc. of Symposium on Nano Device Technology 2004, Hsinchu, Taiwan, 12-13 May 2004, pp. 485-488.<\/li>\n<li><b>&#8220;Effects of bnad-offset ratio on analysis of violet-blue InGaN laser characteristics,&#8221;<br \/>\n<\/b>Yen-Kuang Kuo, Bo-Ting Liou, Mei-Ling Chen, Sheng-Horng Yen and Cheng-Yang Lin, Optics Communications, vol. 231, pp. 395-402, 2004.<\/li>\n<li>J. Piprek, T. Katona, S.P. DenBaars, and S. Li,<br \/>\n<b>&#8220;3D Simulation and analysis of AlGaN\/GaN ultraviolet light emitting diodes,&#8221;<\/b><br \/>\nLight-Emitting Diodes: Research, Manufacturing and Applications VIII, SPIE Proc. 5366-59 (2004).<\/li>\n<li>J. Piprek, N. Trenado, J. M. Hutchinson, J. A. Henness, and L. A. Coldren,<br \/>\n<b>&#8220;Three-dimensional simulation of an integrated wavelength converter&#8221;<\/b><br \/>\nin Physics and Simulation of Optoelectronic Devices XII, Photonics West 2004, SPIE Proc.5349-26 (2004)<\/li>\n<li><b>&#8220;Realistic Simulation of Quantum Well Lasers&#8221; (invited)<\/b>,<br \/>\nJ. Piprek, NanoTech, Boston, MA, March 2004<\/li>\n<li><b>&#8220;Design optimization of InGaAlAs\/GaAs single and double quantum well lasers emitting at 808 nm,&#8221;<\/b><br \/>\nMariusz Zbroszczyk and Maciej Bugajski, Proc. SPIE Int.<br \/>\nSoc. Opt. Eng. 5349, 446 (2004).<\/li>\n<li>&#8220;<b>Lateral current injection (LCI) multiple quantum-well 1.55 um laser with improved gain uniformity across the active region,&#8221;<\/b><br \/>\nM . NADEEM AKRAM,Optical and Quantum Electronics 36: 827-846, 2004., p. 827<\/li>\n<li>&#8220;<b>Investigation of Structures Using GaN(x)P(1-x) Active Layer,<\/b>&#8221;<br \/>\nLorant Petemai, 2004 International Students and Young Scientists Workshop on Photonics and Microsystems, p. 41<\/li>\n<li>&#8220;<b>InGaAs\/InP Avalanche Photodiode with Separated Absorption, Charge and Multiplication Layers,&#8221;<\/b><br \/>\nDaniel Hasko,2004 International Students and Young Scientists Workshop on Photonics and Microsystem<\/li>\n<\/ul>\n<h2>2003<\/h2>\n<ul>\n<li><b>&#8220;POTENTIALLY MODULATED MULTI-QUANTUM WELL SOLAR CELLS WITH IMPROVED DARK CURRENT CHARACTERISTICS,&#8221;<br \/>\n<\/b>Naoyuki Shiotsuka, Tom Takeda, and Yoshitaka Okada Proc. of 3rd World Conference on Photovoltaic Energy Conversion May 11-18.2003 Osaka, Japan, paper SILN-D-03.<\/li>\n<li><b>&#8220;The effects of quantum-well number on gain crosstalk in semiconductor optical amplifiers,&#8221;<\/b><br \/>\nKasunic, K.J.; Tastavridis, K.; Clark, C.N.; Lestrade, M.; Champagne, A.; Maciejko, R.; Quantum Electronics, IEEE Journal of, Volume:39, Issue:7, July 2003, Pages:897 &#8211; 902.<\/li>\n<li><b>&#8220;Use of a device simulator in conjunction with orthogonal arrays in optimizing the design of InAlGaAs\/lnP MQW laser diodes,&#8221;<\/b><br \/>\nDarja,J.; Narata, S.; Nong Chen; Nakano, Y.; Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings of the IEEE\/LEOS 3rd International Conference on ,14-16 Oct. 2003, Pages:25 &#8211; 26.<\/li>\n<li><b>&#8220;Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells,&#8221;<br \/>\n<\/b>Nadir, M.; Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings of the IEEE\/LEOS 3rd, International Conference on , 14-16 Oct. 2003, Pages:53 &#8211; 54.<\/li>\n<li><b>&#8220;Physical modeling of a novel barrier-enhanced quantum-well photodetector device for optical receivers,&#8221;<br \/>\n<\/b>Gregory B. Tait, Bahram Nabet, Microwave and Optical Technology Letters,Volume 40, Issue 3 , Pages 224 &#8211; 227.<\/li>\n<li><b>&#8220;Current Transport Modeling in Quantum-Barrier-Enhanced Heterodimensional Contacts. &#8220;<\/b><br \/>\nTaft, Gregory B.; Nabet, Bahram. IEEE Transactions on Electron Devices, Dec2003, Vol. 50 Issue 12, p2573, 6p.<\/li>\n<li>Shmatov, O.; Li, Z.S.,<br \/>\n<b>&#8220;Truncated-inverted-pyramid light emitting diode geometry optimisation using ray tracing technique,&#8221;<br \/>\n<\/b>Optoelectronics, IEE Proceedings-, Volume:150, Issue:3 ,17 June 2003, Pages:273 &#8211; 277.<\/li>\n<li><b>&#8220;Predictive Simulation of Quantum Well Lasers: How close are we ?&#8221; (invited)<\/b>,<br \/>\nJ. Piprek, OSA Laser Science Conference, Tucson, AZ, October 2003.<\/li>\n<li><b>&#8220;Advanced Analysis of Vertical Cavity Lasers&#8221; (invited)<\/b>,<br \/>\nJ. Piprek, Int. Conf. Mixed Design MIXDES, Lodz, Poland, June 2003<\/li>\n<li><b>&#8220;Balanced Optimization of 1.31 um Tunnel-Junction VCSELs,&#8221;<br \/>\n<\/b>Joachim Piprek, Vijay Jayaraman, Manish Mehta, and John E. Bowers, IEEE\/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Tokyo, 2003.<\/li>\n<li><b>&#8220;Physics of Waveguide Photodetectors with Integrated Amplification,&#8221;<\/b><br \/>\nJ. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers, in: Physics and Simulation of Optoelectronic Devices XI, SPIE Proc. 4986-28, January 2003.<\/li>\n<li><b>&#8220;High-Temperature Characteristics and Tunability of Long-Wavelength Vertical-Cavity Semiconductor Optical Amplifiers,&#8221;<br \/>\n<\/b>Toshio Kimura, Staffan Bj?rlin, Joachim Piprek, John E. bowers, IEEE Photonics Technology Letters, vol. 15, no. 11, pp. 1501-1503, November 2003.<\/li>\n<li><b>&#8220;Lateral-cavity design for long-wavelength vertical-cavity lasers,&#8221;<\/b><br \/>\nJ. Pipek, A. Bregy, Y.-J. Chiu, V. Jayaranman, J.E. Bowers, Proceedings of Nano Tech, Feb. 2003, San Francisco, CA.<\/li>\n<li><b>&#8220;Integrated cavity surface emitting lasers,&#8221;<\/b><br \/>\nB. Liu, J. Piprek, J.E. Bowers, SPIE Proceedings 5248-22, (ITCom 2003), pp. 148-155, Sept. 2003, Orlando, FL.<\/li>\n<li><b>&#8220;Optimization of GaAs amplification photodetectors for 700% quantum efficiency,&#8221;<\/b><br \/>\nJ. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers, IEEE J. Selected Topics in Quantum Electronics, Vol. 9, No. 3, May\/June 2003, pp. 776-782.<\/li>\n<li><b>&#8220;InP-based waveguide photodetector with integrated photon multiplication,&#8221;<\/b><br \/>\nD. Pasquariello, J. Piprek, D. Lasaosa, J. E. Bowers, SPIE Proceedings 5248-34, Semiconductor Optoelectronic Devices for Lightwave Communication, ITCOM, Sept. 2003.<\/li>\n<li><b>&#8220;Novel waveguide photodetectors on InP with integrated light amplification,&#8221;<br \/>\n<\/b>J. Piprek, D. Pasquariello, D. Lasaosa, and J. E. Bowers, Session: Compoud Semiconductors, ECS Proceedings 2003-04.<\/li>\n<li>Yen-Kuang Kuo, Bo-Ting Liou, Mei-Ling Chen, Sheng-Horng Yen, and Cheng-Yang Lin, 2004,<br \/>\n<b>&#8220;Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics&#8221;<\/b>,<br \/>\nOptics Communications (accepted 2003\/12\/11). (SCI)<\/li>\n<li>Jih-Yuan Chang and Yen-Kuang Kuo, 2003,<br \/>\n<b>&#8220;Simulation of blue InGaN quantum-well lasers&#8221;<\/b>,<br \/>\nJournal of Applied Physics, Vol. 93, No. 9, pp. 4992-4998. (SCI)<\/li>\n<\/ul>\n<h2>2002<\/h2>\n<ul>\n<li><b>&#8220;High-power 980-nm pump lasers with flared waveguide design,&#8221;<br \/>\n<\/b>Balsamo,S.; Ghislotti, G.; Trezzi, F.; Bravetti, P.; Coli, G.; Morasca, S.; Lightwave Technology, Journal of , Volume: 20 , Issue: 8 , Aug. 2002, Pages:1512 &#8211; 1516.<\/li>\n<li><b>&#8220;Characterization of GaAs\/AlGaAs laser mesas regrown with semi-insulating GaInP by scanning capacitance microscopy,&#8221;<br \/>\n<\/b>O. Douheret, S. Anand, C. Angulo Barrios, and S. Lourdudoss, APPLIED PHYSICS LETTERS VOLUME 81, NUMBER 6, 5 AUGUST 2002, p. 960.<\/li>\n<li><b>&#8220;Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm,&#8221;<br \/>\n<\/b>J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang, and M. Asif Khan, APPLIED PHYSICS LETTERS VOLUME 81, NUMBER 26 23 DECEMBER 2002,p. 4910.<\/li>\n<li><b>&#8220;High-speed resonant cavity light-emitting diodes at 650 nm,&#8221;<br \/>\n<\/b>Dumitrescu,M.M.; Saarinen, M.J.; Guina, M.D.; Pessa, M.V.; Selected Topics in Quantum Electronics, IEEE Journal of , Volume: 8 ,Issue: 2 , March-April2002, Pages:219 &#8211; 230.<\/li>\n<li>Yuni Chang, Yen-Kuang Kuo, and Man-Fang Huang, 2002,<br \/>\n<b>&#8220;Characteristics of 850-nm InGaAs\/AlGaAs vertical-cavity surface-emitting lasers&#8221;<\/b>,<br \/>\nProceedings of SPIE, Vol. 4913 (Semiconductor Lasers and Applications), pp. 31-40.(EI)<\/li>\n<li>Jih-Yuan Chang and Yen-Kuang Kuo, 2002,<br \/>\n<b>&#8220;Electronic current overflow and inhomogeneous hole distribution of the InGaN quantum well structures&#8221;<\/b>,<br \/>\nProceedings of SPIE, Vol. 4913 (Semiconductor Lasers and Applications), pp. 115-125.(EI)<\/li>\n<li><b>&#8220;Higher efficiency InGaN laser diodes with an improved quantum well capping configuration,&#8221;<br \/>\n<\/b>M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, and S. P. DenBaars, Applied Physics Letters, vol. 81, no. 22, 4275-77, November 2002.<\/li>\n<li><b>&#8220;Analysis and Optimization of High-Power GaN Lasers,&#8221;<br \/>\n<\/b>J. Piprek and Shuji Nakamura, IEEE Int. Semiconductor Laser Conf., Garmisch-Patenkirchen, Germany, October 2002.<\/li>\n<li>Joachim Piprek, Yi-Jen Chiu and J.E. Bowers,<br \/>\n<b>&#8220;Analysis of Multi-Quantum Well Electroabsorption Modulators,&#8221;<\/b><br \/>\nPhysics and Simulation of Optoelectronic Devices X, Photonics West, January 2002, San Jose, CA.<\/li>\n<li>Joachim Piprek, Y.-J. Chiu, S. Zhang, J.E. Bowers, C.Prott, and H. Hillmer,<br \/>\n<b>&#8220;High-Efficiency Multi-Quantum-Well Electroabsorption Modulators,&#8221;<\/b><br \/>\nProceedings of the ECS Symposium on Integrated Optoelectronics, May 2002, Philadelphia, PA.<\/li>\n<li>M. Hansen, J.Piprek, P.M. Pattison, J.S. Speck, S. Nakamura, and S.P. DenBaars<b><br \/>\n&#8220;Higher Efficiency InGaN laser diodes with an improved quantum well capping configuration,&#8221;<br \/>\n<\/b>Applied Physics Letters, vol. 81, no. 22, 4275-77, November 2002.<\/li>\n<li>J. Piprek, J.K.White, A.J. SpringThorpe,<br \/>\n<b>&#8220;Physics of Output Power Limitations in Long-Wavelength Laser Diodes,&#8221;<\/b><br \/>\nSPIE Proceedings 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, ITcom02, August 2002, Boston, MA.<\/li>\n<li>J. Piprek, S. Nakamura,<br \/>\n<b>&#8220;Physics of GaN-based High-Power Lasers,&#8221;<\/b><br \/>\nIEEE Lester Eastman Conference on High Performance Devices, August 2002, Newark, NJ.<\/li>\n<li>J. Piprek, J. K. White, and A. SpringThorpe,<br \/>\n<b>&#8220;What Limits the Maximum Output Power of Long-Wavelength AlGaInAs\/InP Laser Diodes?,&#8221;<\/b><br \/>\nIEEE Journal of Quantum Electronics, vol. 38, 1253 (2002).<\/li>\n<li>J. Piprek and S. Nakamura,<br \/>\n<b>&#8220;Physics of high-power InGaN\/GaN lasers,&#8221;<\/b><br \/>\nIEE Proc.-Optoelectron, vol. 149, 145 (2002).<\/li>\n<li><b>&#8220;Influence of Valence-Band Barriers in VLWIR HgCdTe P-on-n Heterojunctions on Photodiode Parameters,&#8221;<br \/>\n<\/b>J. Wenus, J. Rutkowski, Physica Status Solidi (b),Volume 229, Issue 2 , Pages 1093 &#8211; 1096<\/li>\n<li>Barrios, Lourdudoss, and Martinsson,<br \/>\n<b>&#8220;Analysis of leakage current in GaAs\/AlGaAs buried-heterostructure laserswith a semi-insulating GaInP:Fe burying layer,&#8221;<br \/>\n<\/b>J. Appl. Phys., Vol. 92, No. 5, p.2506, 2002<\/li>\n<\/ul>\n<h2>2001<\/h2>\n<ul>\n<li><b>&#8220;Temperature dependence of the radiative recombination zone in InGaN\/GaN multiple quantum well light-emitting diodes,&#8221;<\/b><br \/>\nChia-Ming Lee, Chang-Cheng Chuo, Jing-Fu Dai, Xian-Fa Zheng, and Jen-Inn Chyi, JOURNAL OF APPLIED PHYSICS VOLUME 89, NUMBER 11, 1 JUNE 2001, p. 6554.<\/li>\n<li><b>&#8220;Computer modeling of dual-band HgCdTe photovoltaic detectors,&#8221;<\/b><br \/>\nK. Jozwikowski and A. Rogalski, JOURNAL OF APPLIED PHYSICS VOLUME 90, NUMBER 3 1 AUGUST 2001, p. 1286<\/li>\n<li><b>&#8220;Numerical modeling of fluctuation phenomena in semiconductor devices,&#8221;<\/b><br \/>\nKrzysztof Jozwikowski, JOURNAL OF APPLIED PHYSICS, VOLUME 90, NUMBER 3, 1 AUGUST 2001, p. 1318<\/li>\n<li><b>&#8220;Optimization of the barrier height in 1.3-mu m InGaAsP multiple-quantum-well active regions for high-temperature operation<\/b>,&#8221;<br \/>\nSebastian Mogg and Joachim Piprek, Proc. SPIE Int. Soc. Opt. Eng.4283, 227 (2001)<\/li>\n<li><b>&#8220;Experimental and theoretical analysis of the carrier distribution in asymmetric multiple quantum-well InGaAsP lasers,&#8221;<\/b><br \/>\nHamp, M.J.; Cassidy, D.T.;Quantum Electronics, IEEE Journal of , Volume: 37 , Issue: 1 , Jan. 2001, Pages:92 &#8211; 99<\/li>\n<li><b>&#8220;Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes,&#8221;<br \/>\n<\/b>Wenus, J.; Rutkowski, J.; Rogalski, A.; Electron Devices, IEEE Transactions on , Volume: 48 , Issue: 7 , July 2001, Pages:1326 &#8211; 1332<\/li>\n<li><b>&#8220;Long-wavelength strained-layer InGaAs\/GaAs quantum-well lasers grown by molecular beam epitaxy,&#8221;<\/b><br \/>\nMicrowave and Optical Technology Letters, Volume 29, Issue 2, Date: 20 April 2001, Pages: 75-77, By T. Piwonski, P. Sajewicz, J. M. Kubica, M. Zbroszczyk, K. Reginski, B. Mroziewicz, M. Bugajski<\/li>\n<li>Joachim Piprek, Staffan Bjorlin and John Bowers, <b><br \/>\n&#8220;Modeling And Optimization Of Vertical-Cavity Semiconductor Laser Amplifiers,&#8221;<\/b><br \/>\nPhysics and Simulation of Optoelectronic Devices IX, Photonics West, SPIE Proc. 4283-15, 2001.<\/li>\n<li><b>&#8220;Simulation and analysis of nitride laser diodes&#8221; (invited)<\/b>,<br \/>\nJ. Piprek, Laser Workshop, ETH Zurich, Switzerland, October 2001.<\/li>\n<li><b>&#8220;Advanced analysis of high-temperature failure mechanisms in telecom lasers,&#8221;<br \/>\n<\/b>J. Piprek, ITCOM, Semiconductor Lasers for Lightwave Communication Systems, Denver, CO, August 2001.<\/li>\n<li>Joachim Piprek, Staffan Bjorlin and John Bowers,<br \/>\n<b>&#8220;Design and Analysis of Vertical-Cavity Semiconductor Optical Amplifiers,&#8221;<\/b><br \/>\nIEEE Journal of Quantum Electronics, Volume 37, Number 1, Pages 127-134, January 2001.<\/li>\n<li>Yi-Jen Chiu, Sheng Zhang, Volkan Kaman, Joachim Piprek and John Bowers, <b><br \/>\n&#8220;High-Speed Traveling-Wave Electroabsorption Modulators,&#8221;<br \/>\n<\/b>Symposium on Radio Frequency Photonic Devices and Systems II, 46th SPIE Annual Meeting, San Diego, August 2001.<\/li>\n<li>M. Nawaz, K. Permthammasin,<br \/>\n<b>&#8220;A design analysis of a GaInP\/GaInAs\/GaAs-based 980 nm Al-free pump laser using self-consistent numerical simulation,&#8221;<\/b><br \/>\nSemiconductor Science and Technology, vol. 16, pp. 877-884, 2001.<\/li>\n<li><b>&#8220;A theoretical optimization of GaInP\/GaInAs\/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation,&#8221;<\/b><br \/>\nNawaz, M.; Permthamassin, K.; Zaring, C.; Willander, M.; Semiconductor Device Research Symposium, 2001 International;5-7 Dec. 2001, Pages:289 &#8211; 292<\/li>\n<li><b>&#8220;Impact of the LWIR photodiodes geometry on their basic parameters,&#8221;<\/b><br \/>\nJakub Wenus, Jaroslaw Rutkowski, Krzysztof Adamiec, Leszek Kubiak, and Pawel Madejczyk, Proc. SPIE Int. Soc. Opt. Eng. 4413, 363 (2001)<\/li>\n<li><b>&#8220;Modeling and numerical simulation of the optical intensity distribution in double-heterostructure semiconductor lasers,&#8221;<\/b><br \/>\nLadislav Kuna and Frantisek Uherek, Proc. SPIE Int. Soc. Opt. Eng.4356, 283 (2001)<\/li>\n<\/ul>\n<h2>2000<\/h2>\n<ul>\n<li><b>&#8220;IMPROVED DARK CURRENT CHARACTERISTICS OF GaAdnGaAs MULTI-QUANTUM WELL SOLAR CELLS FABRICATED BY ATOMIC H-ASSISTED MOLECULAR BEAM EPITAXY,&#8221;<\/b><br \/>\nOkada, Y.; Seki, S.; Hagiwara, Y.; Kawabe, M, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference, 2000, p. 1277.<\/li>\n<li>Yen-Kuang Kuo, Kuo-Kai Horng, Ya-Lien Huang, Jih-Yuan Chang, Yuni Chang, and Hsu-Ching Huang, 2000,<br \/>\n<b>&#8220;Temperature dependent optical properties of the InGaN semiconductor materials: experimental and numerical studies&#8221;<\/b>,<br \/>\nProceedings of SPIE, Vol. 4078 (Optoelectronic Materials and Devices), pp. 579-586. (EI)<\/li>\n<li>Man-Fang Huang, Pin-Hui Liu, J. S. Liu, Yen-Kuang Kuo, Ya-Lien Huang, Kuo-Kai Horng, Jih-Yuan Chang, Yuni Chang, and Hsu-Ching Huang,<br \/>\n<b>&#8220;Experimental and numerical study on the optical properties of yellow-green AlGaInP light emitting diodes&#8221;<\/b>,<br \/>\nProceedings of SPIE, Vol. 4078 (Optoelectronic Materials and Devices), pp. 595-602. (EI)<\/li>\n<li>Yen-Kuang Kuo, Hsu-Ching Huang, Jih-Yuan Chang, Yuni Chang, Kuo-Kai Horng, Ya-Lien Huang, Wen-Wei Lin, and Man-Fan Huang, 2000,<br \/>\n<b>&#8220;A study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials&#8221;<\/b>,<br \/>\nin the 13th Annual Lasers and Electro Optics Society Meeting (IEEE\/LEOS 2000, Puerto Rico), paper ThL 4 (Conference Proceedings pp. 790-791).<\/li>\n<li>Yen-Kuang Kuo, Kuo-Kai Horng, Hsu-Ching Huang, Ya-Lien Huang, Jih-Yuan Chang, Yuni Chang, Wen-Wei Lin, Yi-An Chang, and Chih-Kang Chang, 2000,<br \/>\n<b>&#8220;Numerical study on III-N and III-P semiconductor materials with LASTIP, PICS3D, and CASTEP&#8221;<\/b>,<br \/>\nin the 2nd International Photonics Conference (IPC2000, National Chiao Tung University, Hsinchu, Taiwan), paper W-S1-A003, Proc. IPC 2000, pp. 17-19.<\/li>\n<li>Jih-Yuan Chang and Yen-Kuang Kuo, 2000,<br \/>\n<b>&#8220;Temperature-dependent current overflow of InGaN quantum well structure &#8211; a numerical study&#8221;<\/b>,<br \/>\nin the 2nd International Photonics Conference, paper W-S1-A004, Proc. IPC 2000, pp. 20-22.<\/li>\n<li>Hsu-Ching Huang, Yuni Chang, and Yen-Kuang Kuo, 2000,<br \/>\n<b>&#8220;A numerical study on 570-nm AlGaInP quantum well structure with tensile-strained barrier&#8221;<\/b>,<br \/>\nin the 2nd International Photonics Conference, paper Th-T1-B002, Proc. IPC 2000, pp. 340-342.<\/li>\n<li>Kuo-Kai Horng, Hsu-Ching Huang, and Yen-Kuang Kuo, 2000,<br \/>\n<b>&#8220;Numerical study on an ultraviolet GaN\/Al0.2Ga0.8N vertical-cavity surface-emitting laser&#8221;<\/b>,<br \/>\nin the 2nd International Photonics Conference, paper TH-S1-P004, Proc. IPC 2000, pp. 497-499.<\/li>\n<li><b>&#8220;Self-Consistent Simulation and Analysis of InGaN\/GaN Lasers,&#8221;<\/b><br \/>\nJ. Piprek, Shuji Nakamura, LEOS Annual Meeting, Rio Grande, November 2000.<\/li>\n<li><b>&#8220;Simulation and Optimization of 420nm InGaN\/GaN Laser Diodes,&#8221;<br \/>\n<\/b>J. Piprek, K. Sink, M. Hansen, J. Bowers, and S. DenBaars, SPIE Photonics West Symp. on Physics and Simulation of Optoelectronic Devices, San Jose, CA, January 2000.<\/li>\n<li>M.J. Hamp, D.T. Cassidy, B.J. Robinson, Q.C. Zhao, D.A. Thompson,<br \/>\n<b>&#8220;Effect of Barrier Thickness on the Carrier Distribution in Asymmectric MQW InGaAsP Lasers,&#8221;<br \/>\n<\/b>IEEE Photonic Technology Letters, vol. 12, No. 2. February 2000.<\/li>\n<li>J. Piprek , P. Abraham, and J.E. Bowers,<br \/>\n<b>&#8220;Self-Consistent Analysis of High-Temperature Effects on Strained-Layer Multiquantum-Well InGaAsP-InP Lasers,&#8221;<br \/>\n<\/b>IEEE Journal of Quantum. Electronics. Vol.36. No3. March 2000.<\/li>\n<\/ul>\n<h2>Before 2000<\/h2>\n<ul>\n<li><b>&#8220;Hole distribution in InGaAsP 1.3-um multiple-quantum-well laser structures with different hole confinement energies,&#8221; <\/b><br \/>\nSilfvenius, C.; Landgren, G.; Marcinkevicius, S.; Quantum Electronics, IEEE Journal of , Volume: 35, Issue: 4 ; April 1999, Pages:603-607<\/li>\n<li><b>&#8220;High-performance 1.3-um InAsP strained-layer quantum-well ACIS (Al-oxide confined inner stripe) lasers,&#8221;<br \/>\n<\/b>Iwai, N.; Mukaihara, T.; Yamanaka, N.; Kumada, K.; Shimizu, H.; Kasukawa, A.; Selected Topics in Quantum Electronics, IEEE Journal of ,Volume: 5 ,Issue: 3 ; May-June 1999, Pages:694 &#8211; 700<\/li>\n<li><b>&#8220;Cavity length effects on internal loss and quantum efficiency of multiquantum-well lasers,&#8221;<br \/>\n<\/b>Piprek, J.; Abraham, P.; Bowers, J.E.;Selected Topics in Quantum Electronics, IEEE Journal of ,Volume: 5 ,Issue: 3 ; May-June 1999, Pages:643 &#8211; 647<\/li>\n<li>M. Dumitrescu, M. Toivonen, P. Savolainen, S. Orsila, M. Pessa.<br \/>\n<b>&#8220;High-power Edge Emitting Red Laser Diode Optimisation using Optical Simulation,&#8221;<\/b><br \/>\nOptical and Quantum Electronics 31: 1009 1030. 1999.<\/li>\n<li>J. Piprek, P. Abraham, and J.E. Bowers,<br \/>\n<b>&#8220;Efficiency analysis of quantum well lasers using PICS3D,&#8221;<\/b><br \/>\nProc. Integrated Photonics Research Conf., Santa Barbara, July 1999.<\/li>\n<li>P. Abraham, J. Piprek, S.P. DenBaars, and J.E. Bowers,<br \/>\n<b>&#8220;Study of temperature effects on loss mechanisms in 1.55 um laser diodes with In(0.81)Ga(0.19)P electron stopper layer,&#8221;<\/b><br \/>\nSemicond. Sci. Technology. vol. 14, (1999) pp. 419-424.<\/li>\n<li>J. Piprek, P. Abraham, and J.E. Bowers,<br \/>\n<b>&#8220;Self-consistent analysis of high-temperature effects on InGaAsP\/InP lasers,&#8221;<br \/>\n<\/b>Proc. IEEE International Symposium on Compound Semiconductors, Berlin 1999.<\/li>\n<li>J. Piprek, K. Takiguchi, A. Black, P. Abraham, A. Keating,V. Kaman, S. Zhang, and J.E. Bowers, <b>&#8221;<br \/>\nAnalog Modulation of 1.55 um vertical-cavity lasers,&#8221;<\/b><br \/>\nSPIE Proc. vol. 3627.<br \/>\n<b><\/b><\/li>\n<li><b>&#8220;Vertical-Cavity Surface-Emitting Lasers III,&#8221;<br \/>\n<\/b>leds. Kent D. Choquette and Chun Lei (1999).<\/li>\n<li>P. Abraham, J. Piprek, S.P. DenBaars, and J.E. Bowers,<br \/>\n<b>&#8220;Improvement of internal quantum efficiency in 1.55 um laser diodes with InGaP electron stopper layer,&#8221;<\/b><br \/>\nJpn. J. Appl. Phys. vol. 38 (1999) pp. 1239-1242.<\/li>\n<li>M.J. Hamp, D.T. Cassidy, B.J. Robinson, Q.C. Zhao, D.A. Thompson, and M. Davies,<br \/>\n<b>&#8220;Effect of Barrier Height on the Uneven Carrier Distribution in Asymmetric MQW InGaAsP Lasers,&#8221;<\/b><br \/>\nIEEE Photonic Technology Letters, vol. 10, No. 10. pp. 1380-1382. October 1998.<\/li>\n<li>J. Piprek, P. Abraham, S.P. DenBaars, and J.E. Bowers, <b><br \/>\n&#8220;Effects of an InGaP electron barrier layer on 1.55 um laser diode performance,&#8221;<\/b><br \/>\nProc. 10th International Conf. on Indium Phoshide and Related Materials, Tsukuba, Japan, May 1998.<\/li>\n<li>J. Piprek, P. Abraham, and J.E. Bowers,<br \/>\n<b>&#8220;Carrier nonuniformity effects on the internal efficiency of multiquantum-well lasers,&#8221;<\/b><br \/>\nAppl. Phys. Lett., vol. 74, No. 4, pp. 489-491, Jan. 1999.<\/li>\n<li>[J. Piprek, P. Abraham, and J.E. Bowers,<br \/>\n<b>&#8220;Effects of quantum well recombination losses on the internal differential efficiency of multi quantum well lasers,&#8221;<\/b><br \/>\nProc. 16th IEEE International Semiconductor Laser Conf.,Paper TuE37, Nara, Japan 1998.<\/li>\n<li>Y. Yoshida, H. Watanabe, K. Shibata, A. Takemoto, and H. Higuchi,<br \/>\n<b>&#8220;Analysis of characteristic temperature for InGaAsP DH lasers with p-n-p-n blocking layers using two-dimensional device simulator,&#8221;<\/b><br \/>\nIEEE J. Quantum Electronics, vol. 34, No. 7, July 1998.<\/li>\n<li>Kay Domen , Reiko Soejima, Akito Kuramata , Toshiyuki Tanahashi,<br \/>\n<b>&#8220;Electron Overflow to the AlGaN p-Cladding Layer in InGaN\/GaN\/AlGaN MQW Laser Diodes,&#8221;<\/b><br \/>\nInternet Journal of Nitride Semiconductor Research, vol. 3, article 2. 1998.<\/li>\n<li><b>&#8220;Carrier transport effects in 1.3pm MQW InGaAsP laser design,&#8221;<\/b><br \/>\nChristofer Silfvenius and Gunnar Landgren, 10th Intern. Conf. on Indium Phosphide and Related Materials,11-15 May 1998 Tsukuba, Japan, paper TUP-45<\/li>\n<li><b>&#8220;1.4-um InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability,&#8221;<br \/>\n<\/b>Xiang Zhu; Cassidy, D.T.; Hamp, M.J.; Thompson, D.A.; Robinson, B.J.; Zhao, Q.C.; Davies, M.; Photonics Technology Letters, IEEE, Volume: 9, Issue:9, Sept. 1997, Pages:1202 &#8211; 1204.<\/li>\n<li>A. Lindell, M. Pessa and A. Salokatve, F. Bernardini and R. M. Nieminen,<br \/>\n<b>&#8220;Band offset at the GaInP\/GaAs heterojunction,&#8221;<\/b><br \/>\nJ.Appl. Phys., vol. 82, No. 7, 1 Oct. 1997, pp. 3374-3380.<\/li>\n<li>P. M. Mensz,<br \/>\n<b>&#8220;Prospects for truly blue ZnSe\/Zn{1-u}Mg{u}S{v}Se{1-v}\/Zn{1-x}Mg{x}S{y}Se{1-y} semiconductor diode laser,&#8221;<\/b><br \/>\nAppl. Phys. Lett., vol. 65, pp. 2627-2629, 1994.<\/li>\n<li>P. M. Mensz, J. Crystal Growth, vol. 138, p. 697, 1994.<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"<p>2005 Simon Li, Z.Q. Li, O. Shmatov, C. S. Xia and W. Lu [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"parent":448,"menu_order":3,"comment_status":"closed","ping_status":"open","template":"","meta":[],"_links":{"self":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages\/313"}],"collection":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/comments?post=313"}],"version-history":[{"count":0,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages\/313\/revisions"}],"up":[{"embeddable":true,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages\/448"}],"wp:attachment":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/media?parent=313"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}