{"id":311,"date":"2014-01-20T19:38:24","date_gmt":"2014-01-20T19:38:24","guid":{"rendered":"http:\/\/www.crosslightsoftware.ca\/?page_id=311"},"modified":"2014-01-20T19:38:24","modified_gmt":"2014-01-20T19:38:24","slug":"publications-from-2006-2008","status":"publish","type":"page","link":"https:\/\/crosslight.com.cn\/wordpress\/publications\/publications-from-2006-2008","title":{"rendered":"2006 &#8211; 2008\u671f\u520a\u8bba\u6587"},"content":{"rendered":"<h2>2008<\/h2>\n<ul>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/PVSC.2008.4922475\" target=\"_blank\">&#8220;2D-simulation of inverted metamorphic GaInP\/GaAs\/GaInAs triple junction solar cell&#8221;<\/a><\/b>,<br \/>\nLi, Z.Q.; Xiao, Y.G.; Lestrade, M.; Li, Z.M. Simon; Photovoltaic Specialists Conference, 2008. PVSC &#8217;08. 33rd IEEE, 2008 , Page(s): 1 &#8211; 6<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpls\/abs_all.jsp?arnumber=4663596\" target=\"_blank\">&#8220;Numerical Study of the Optical Saturation and Voltage Control of a Transistor Vertical-Cavity Surface-Emitting Laser&#8221;<\/a><\/b>,<br \/>\nWei Shi; Chrostowski, L.; Faraji, B.; Photonics Technology Letters, IEEE Volume: 20 , Issue: 24, 2008 , Page(s): 2141 &#8211; 2143<\/li>\n<li><strong>&#8220;Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar<\/strong><strong> fabricated by focused ion beam milling&#8221;<\/strong>,<br \/>\nYu, Peichen; Chiu, C. H.; Wu, Yuh-Renn; Yen, H. H.; Chen, J. R.; Kao, C. C.; Yang, Han-Wei; Kuo, H. C.; Lu, T. C.; Yeh, W. Y.; Wang, S. C.; Applied Physics Letters; Volume: 93 , Issue: 8, 2008 , Page(s): 081110 &#8211; 081110-3<\/li>\n<li><b><a href=\"http:\/\/link.aip.org\/link\/JAPIAU\/v103\/i10\/p103115\/s1\" target=\"_blank\">&#8220;Polarization-dependent optical characteristics of violet InGaN laser diodes&#8221;<\/a><\/b>,<br \/>\nYen, Sheng-Horng; Kuo, Yen-Kuang; Journal of Applied Physics Volume: 103 , Issue: 10, 2008 , Page(s): 103115 &#8211; 103115-6<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpls\/abs_all.jsp?arnumber=4636023\" target=\"_blank\">&#8220;Voltage controlled operation of a transistor vertical cavity surface emitting laser&#8221;<\/a><\/b>,<br \/>\nWei Shi; Chrostowski, L.; Faraji, B.; Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International; 2008 , Page(s): 89 &#8211; 90<\/li>\n<li><strong>&#8220;Laterally-corrugated ridge-waveguide distributed feedback lasers at 980 nm&#8221;<\/strong>,<br \/>\nLaakso, A.; Viheriala, J.; Dumitrescu, M.; Tommila, J.; Haring, K.; Leinonen, T.; Ranta, S.; Pessa, M.; Numerical Simulation of Optoelectronic Devices, 2008. NUSOD &#8217;08. International Conference on; 2008 , Page(s): 17 &#8211; 18<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/JLT\/abstract.cfm?URI=JLT-26-13-1891\" target=\"_blank\">&#8221; Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs&#8221;<\/a><\/b>,<br \/>\nJun-Rong Chen; Tsung-Shine Ko; Tien-Chang Lu; Yi-An Chang; Hao-Chung Kuo; Yen-Kuang Kuo; Jui-Yen Tsai; Li-Wen Laih; Shing-Chung Wang; Lightwave Technology, Journal of; Volume: 26 , Issue: 13, 2008 , Page(s): 1891 &#8211; 1900<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3062856\" target=\"_blank\">&#8220;Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect&#8221;<\/a><\/b>,<br \/>\nBrown, G. F.; Ager, J. W.; Walukiewicz, W.; Schaff, W. J.; Wu, J.; Applied Physics Letters; Volume: 93 , Issue: 26, 2008 , Page(s): 262105 &#8211; 262105-3<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.2906030\" target=\"_blank\">&#8220;Control of optical mode distribution through etched microstructures for improved broad area laser performance&#8221;<\/a><\/b>,<br \/>\nCrump, P.; Leisher, P.; Matson, T.; Anderson, V.; Schulte, D.; Bell, J.; Farmer, J.; DeVito, M.; Martinsen, R.; Kim, Y. K.; Choquette, K. D.; Erbert, G.; Trankle, G.; Applied Physics Letters, Volume: 92 , Issue: 13, 2008 , Page(s): 131113 &#8211; 131113-3<\/li>\n<li><b><a href=\"http:\/\/www.nusod.org\/conf08\/WB3.pdf\" target=\"_blank\">&#8220;High speed VCSELs with separated quantum wells&#8221;<\/a><\/b><br \/>\nLysak, V.V.; Safonov, I.M.; Song, Y.M.; Sukhoivanov, I.A.; Yong Tak Lee; Numerical Simulation of Optoelectronic Devices, 2008. NUSOD &#8217;08. International Conference on; 2008 , Page(s): 89 &#8211; 90<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/SMELEC.2008.4770330\" target=\"_blank\">&#8221; Design optimization of GaInNAs quantum wells for long wavelength VCSEL&#8221;<\/a><\/b>,<br \/>\nAlias, M.S.; Maulud, M.F.; Mitani, S.; Shaari, S.; Manaf, N.; Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on; 2008 , Page(s): 311 &#8211; 315<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/JLT.2008.926939\" target=\"_blank\">&#8220;Numerical Study on Optimization of Active Layer Structures for GaN\/AlGaN Multiple-Quantum-Well Laser Diodes&#8221;<\/a><\/b>,<br \/>\nJun-Rong Chen; Tsung-Shine Ko; Po-Yuan Su; Tien-Chang Lu; Hao-Chung Kuo; Yen-Kuang Kuo; Shing-Chung Wang; Lightwave Technology, Journal of; Volume: 26 , Issue: 17, 2008 , Page(s): 3155 &#8211; 3165<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/NUSOD.2008.4668230\" target=\"_blank\">&#8220;Based simulation of high gain and low breakdown voltage InGaAs\/InP avalanche photodiode&#8221;<\/a><\/b>,<br \/>\nLei, W.; Guo, F.M.; Lu, W.; Xiong, D.Y.; Zhu, Z.Q.; Chu, J.H.; Numerical Simulation of Optoelectronic Devices, 2008. NUSOD &#8217;08. International Conference on; 2008 , pp. 37 &#8211; 38<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3012388\" target=\"_blank\">&#8220;Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells&#8221;<\/a><\/b>,<br \/>\nNi, Xianfeng; Fan, Qian; Shimada, Ryoko; Ozgur, Umit; Morkoc, Hadis; Applied Physics Letters, Volume: 93 , Issue: 17, 2008 , pp. 171113 &#8211; 171113-3<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/abstract.cfm?URI=CLEO-2008-CMAA3\" target=\"_blank\">&#8220;The origin of efficiency droop in GaN-based light-emitting diodes and its solution&#8221;<\/a><\/b>,<br \/>\nJong Kyu Kim; Min-Ho Kim; Schubert, M.F.; Qi Dai; Tan Sakong; Sukho Yoon; Cheolsoo Sone; Yongjo Park; Piprek, J.; Schubert, E.F.; Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO\/QELS 2008. Conference on; 2008 , pp. 1 &#8211; 2<\/li>\n<li><strong>&#8220;Study of grain boundaries influence on electrical properties of nitrides&#8221;<\/strong>,<br \/>\nA. Szyszka, B. Paszkiewicz, R. Paszkiewicz &amp; M. Tlaczala, Vaccum, Vol. 82, No. 10, pp. 1034-1039 (June 3 2008)<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/abstract.cfm?URI=JLT-26-3-329\" target=\"_blank\">&#8220;Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers&#8221;<\/a><\/b>,<br \/>\nJun-Rong Chen &amp; al., Journal of Lightwave Technology, Vol. 26, No. 3, pp. 329-337 (Feb. 1 2008)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1016\/j.optlaseng.2007.10.007\" target=\"_blank\">&#8220;Temperature behaviour of top mirror reflection spectrum in intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers&#8221;<\/a><\/b>,<br \/>\nA.A. Dyomin, V.V. Lysak, S.I. Petrov, Y.T. Lee &amp; I.A. Sukhoivanov, Optics and Lasers in Engineering Volume 46, Issue 3, March 2008, pp. 211-216<\/li>\n<li><b><a href=\"http:\/\/www.sciencedirect.com\/science\/article\/B6THY-4TB181W-4\/2\/b6cf9c38a7a2b31152545c3e3a273b74\" target=\"_blank\">&#8220;An effect of As flux on GaAs\/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study&#8221;<\/a><\/b><br \/>\nJ. Pakarinen, V. Polojarvi, &amp; al. Applied Surface Science, Volume 255, Issue 5, Part 2, 30 December 2008, Pages 2985-2988<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1007\/s11082-008-9230-9\" target=\"_blank\">&#8220;Characterization and optimization of high-power InGaAs\/InP photodiodes&#8221;<\/a><\/b><br \/>\nH. Pan; A. Beling; H. Chen ; J. C. Campbell, Optical and Quantum Electronics, Volume 40, Number 1 \/ January, 2008, pp. 41-46<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1117\/12.798315\" target=\"_blank\">&#8220;Advanced InGaAs\/InAlAs\/InP avalanche photodiodes for high-speed detection of 1.55 \u00b5m infrared radiation&#8221;<\/a><\/b>,<br \/>\nKaniewski, J.; Muszalski, J.; Piotrowski, J., Infrared Spaceborne Remote Sensing and Instrumentation XVI. Edited by Strojnik, Marija. Proceedings of the SPIE, Volume 7082, pp. 70820F-70820F-6 (2008)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1007\/s11082-009-9292-3\" target=\"_blank\">&#8220;Optical modeling of laterally-corrugated ridge-waveguide gratings&#8221;<\/a><\/b>,<br \/>\nA. Laakso; M. Dumitrescu; &amp; al., Optical and Quantum Electronics, Volume 40, Numbers 11-12 \/ September, 2008, pp. 907-920<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1016\/j.optcom.2008.05.034\" target=\"_blank\">&#8220;Improvement in piezoelectric effect of violet InGaN laser diodes&#8221;<\/a><\/b>,<br \/>\nSheng-Horng Yen and Yen-Kuang Kuo, Optics Communications, Volume 281, Issue 18, 15 September 2008, Pages 4735-4740<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1002\/pssc.200778501\" target=\"_blank\">&#8220;A comparative study on single and double channel AlGaN\/GaN high electron mobility transistor&#8221;<\/a><\/b>,<br \/>\nJing Yao Zheng; Jenq Shinn Wu; Der Yuh Lin; Hung Ji Lin, physica status solidi (c), Volume 5 Issue 6, Pages 1944 &#8211; 1946, Special Issue: 7th International Conference on Nitride Semiconductors (ICNS-7)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1364\/OE.16.010849\" target=\"_blank\">&#8220;Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes&#8221;<\/a><\/b><br \/>\nHan-Youl Ryu and Kyoung-Ho Ha, Optics Express, Vol. 16, Issue 14, pp. 10849-10857 (2008)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1364\/OE.16.005290\" target=\"_blank\">&#8220;Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm&#8221;<\/a><\/b><br \/>\nMartin F. Schubert, Frank W. Mont, &amp; al., Optics Express, Vol. 16, Issue 8, pp. 5290-5298 (2008)<\/li>\n<\/ul>\n<h2>2007<\/h2>\n<ul>\n<li><b><a href=\"http:\/\/http\/\/dx.doi.org\/10.1016\/j.mssp.2007.11.007\" target=\"_blank\">&#8220;Junction temperature and reliability of high-power flip-chip light emitting diodes&#8221;<\/a><\/b>,<br \/>\nZ.Z. Chen &amp; al.; Materials Science in Semiconductor Processing, Vol. 10, Issues 4-5 (August-October 2007), pp. 206-210<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/ICTON.2007.4296162\" target=\"_blank\">&#8220;Simulation of Intra-Cavity Contacted Oxide-Confined Vertical Cavity Surface Emitting Lasers for 10 Gb\/s Ultrashort Optical Interconnections&#8221;<\/a><\/b>,<br \/>\nLysak, V. &amp; Yong-Tak Lee, 9th International Conference on Transparent Optical Networks (1-5 July 2007), Vol. 2, pp. 132-136<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1007\/s00340-006-2567-5\" target=\"_blank\">&#8220;Numerical study on strained InGaAsP\/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers&#8221;<\/a><\/b>,<br \/>\nY.-K. Kuo, J.-R. Chen, M.-L. Chen &amp; B.-T. Liou, Applied Physics B: Lasers and Optics, Volume 86, Number 4.<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1016\/j.vacuum.2007.07.046\" target=\"_blank\">&#8220;Improvement of quantum efficiency of MBE grown AlGaAs\/InGaAs\/GaAs edge emitting lasers by optimisation of construction and technology&#8221;<\/a><\/b>,<br \/>\nKamil Kosiel, Jan Muszalski, Anna Szerling, Maciej Bugajski &amp; Rafal Jakiela, Vol. 82, Issue 4 (12 December 2007), pp. 383-388<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/iel5\/4298515\/4298516\/04298535.pdf\" target=\"_blank\">&#8220;Highly efficient resonant-cavity light-emitting diodes for compact color projectors&#8221;<\/a><\/b>,<br \/>\nLysak, V.V. &amp; Lee, Y.-T., International Workshop on Optoelectronic Physics and Technology 2007 (20-22 June 2007)<\/li>\n<li><b><a href=\"http:\/\/http\/\/dx.doi.org\/10.1088\/1009-1963\/16\/3\/043\" target=\"_blank\">&#8220;Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes&#8221;<\/a><\/b>,<br \/>\nFu Sheng-Hui, Song Guo-Feng &amp; Chen Liang-Hui, 2007 Chinese Phys. 16 pp.817-820<\/li>\n<li><b><a href=\"http:\/\/10.0.3.239\/s10946-007-0046-z\" target=\"_blank\">&#8220;Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions&#8221;<\/a><\/b>,<br \/>\nS. M. Mitani, P. K. Choudhury &amp; M. S. Alias, Journal of Russian Laser Research, Vol. 28, No. 6<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1007\/s00339-007-4244-x\" target=\"_blank\">&#8220;Experimental and numerical study on AlGaInAs\/AlGaAs distributed feedback lasers with GaInP gratings&#8221;<\/a><\/b>,<br \/>\nFu Shenghui, Song Guofeng &amp; Chen Lianghui, Applied Physics A: Materials Science &amp; Processing, Vol. 89, No. 4<\/li>\n<li><b><a href=\"http:\/\/link.aip.org\/link\/?JAPIAU\/102\/083539\/1\" target=\"_blank\">&#8220;Fabrication and properties of coherent-structure In-polarity InN\/In<sub>0.7<\/sub>Ga<sub>0.3<\/sub>N multiquantum wells emitting at around 1.55 \u03bcm&#8221;<\/a><\/b>,<br \/>\nSong-Bek Che, Tomoyasu Mizuno, Xinqiang Wang, Yoshihiro Ishitani &amp; Akihiko Yoshikawa, Journal of Applied Physics 102, 083539 (October 2007)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1088\/0268-1242\/22\/7\/011\" target=\"_blank\">&#8220;Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates&#8221;<\/a><\/b>,<br \/>\nT Swietlik &amp; al., 2007 Semicond. Sci. Technol. 22 pp.736-741<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/iel5\/4452319\/4452320\/04452728.pdf\" target=\"_blank\">&#8220;Etched Micro-structures for Control of Optical Mode Distribution for Improved Broad Area Laser Performance&#8221;<\/a><\/b>,<br \/>\nCrump, P. &amp; al., Optical Society of America &#8211; CLEO\/QELS Conference, 6-11 May 2007<\/li>\n<li><b><a href=\"http:\/\/link.aip.org\/link\/?APPLAB\/91\/201118\/1\" target=\"_blank\">&#8220;Investigation of violet InGaN laser diodes with normal and reversed polarizations&#8221;<\/a><\/b>,<br \/>\nSheng-Horng Yen, Yen-Kuang Kuo, Meng-Lun Tsai &amp; Ta-Cheng Hsu, Appl. Phys. Lett. \/ Volume 91 \/ Issue 20 \/ LASERS, OPTICS, AND OPTOELECTRONICS, 16 Nov. 2007<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1016\/j.optlastec.2006.10.003\" target=\"_blank\">&#8220;Gain and threshold properties of InGaAsN\/GaAsN material system for 1.3\u03bcm semiconductor lasers&#8221;<\/a><\/b>,<br \/>\nSheng-Horng Yen, Mei-Ling Chen &amp; Yen-Kuang Kuo, Optics &amp; Laser Technology 39 (2007), pp. 1432\u00a8C1436<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1016\/j.optcom.2007.02.025\" target=\"_blank\">&#8220;Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3\u03bcm semiconductor lasers&#8221;<\/a><\/b>,<br \/>\nYen-Kuang Kuo, Sheng-Horng Yen, Ming-Wei Yao, Mei-Ling Chen &amp; Bo-Ting Liou, Optics Communications Volume 275, Issue 1, 1 July 2007, pp. 156-164<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/iel5\/4348984\/4348985\/04349017.pdf\" target=\"_blank\">&#8220;Simulation of quantum wells with \u2018spikes\u2019 and \u2018dips\u2019 &#8220;<\/a><\/b>,<br \/>\nLaakso, A; Dumitrescu, M.; Toikkanen, L.; Tukiainen, A.; Rimpilainen, V.; Pessa, M., NUSOD &#8217;07 (24-28 Sept. 2007)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1016\/j.physe.2007.11.009\" target=\"_blank\">&#8220;Optical characterization of AlxGa1-xN\/GaN high electron mobility transistor structures&#8221;<\/a><\/b>,<br \/>\nD.Y. Lin, J.D. Wu, J.Y. Zheng &amp; C.F. Lin, Physica E: Low-dimensional Systems and Nanostructures, Volume 40, Issue 5, pp. 1763-5, 17th International Conference on Electronic Properties of Two-Dimensional Systems<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1016\/j.physe.2007.09.202\" target=\"_blank\">&#8220;Photoreflectance and photoluminescence investigations of two-dimensional electron gas in pseudomorphic high electron mobility transistor structures&#8221;<\/a><\/b>,<br \/>\nD.Y. Lin, M.C. Wu, H.J. Lin &amp; W.L. Chen, Physica E: Low-dimensional Systems and Nanostructures Volume 40, Issue 5, pp. 1380-1382, 17th International Conference on Electronic Properties of Two-Dimensional Systems<\/li>\n<li><b><a href=\"http:\/\/link.aip.org\/link\/?APPLAB\/91\/183507\/1\" target=\"_blank\">&#8220;Origin of efficiency droop in GaN-based light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nMin-Ho Kim, Martin F. Schubert, Qi Dai, Jong Kyu Kim, &amp; E. Fred Schubert, Appl. Phys. Lett. 91, 183507 (2007)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1117\/12.734086\" target=\"_blank\">&#8220;Simulation of deep ultraviolet light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nYen-Kuang Kuo &amp; Sheng-Horng Yen, Proceedings of SPIE &#8212; Volume 6669, Seventh International Conference on Solid State Lighting (Sep. 14, 2007)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1117\/12.734134\" target=\"_blank\">&#8220;Numerical simulation of top-emitting organic light-emitting diodes with electron and hole blocking layers&#8221;<\/a><\/b>,<br \/>\nShu-Hsuan Chang &amp; Cheng-Hong Yang, Proceedings of SPIE &#8212; Volume 6655, Organic Light Emitting Materials and Devices XI (Oct. 16, 2007)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1117\/12.734159\" target=\"_blank\">&#8220;Numerical simulation of bright white multilayer organic light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nMei-Ling Chen, Cheng-Hong Yang, Chien-Yang Wen, Shu-Hsuan Chang &amp; Yen-Kuang Kuo, Proceedings of SPIE &#8212; Volume 6655, Organic Light Emitting Materials and Devices XI (Oct. 16, 2007)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1117\/12.733860\" target=\"_blank\">&#8220;Effect of spontaneous and piezoelectric polarization on the optical characteristics of blue light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nYen-Kuang Kuo, Sheng-Horng Yen &amp; Miao-Chan Tsai, Proceedings of SPIE &#8212; Volume 6669,Seventh International Conference on Solid State Lighting, 66691I (Sep. 14, 2007)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1117\/12.696651\" target=\"_blank\">&#8220;Modeling of GaN based resonant-cavity light-emitting diode&#8221;<\/a><\/b>,<br \/>\nZ. Simon Li &amp; Z. Q. Li, Proceedings of SPIE &#8212; Volume 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 64860S (Feb. 13, 2007)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1088\/0957-4484\/18\/33\/335706\" target=\"_blank\">&#8220;Optical properties of In<sub>0.3<\/sub>Ga<sub>0.7<\/sub>N\/GaN green emission nanorods fabricated by plasma etching&#8221;<\/a><\/b>,<br \/>\nC H Chiu &amp; al.,2007 Nanotechnology 18 335706<\/li>\n<li><b><a href=\"http:\/\/iris.elf.stuba.sk\/JEEEC\/data\/pdf\/3_107-10.pdf\" target=\"_blank\">&#8220;Design and properties of InGaAs\/InGaAsP\/InP avalanche photodiode&#8221;<\/a><\/b>,<br \/>\nDaniel Ha?ko &#8211; Jaroslav Kov\u00a8\u00a2c &#8211; Franti?ek Uherek &#8211; Jaroslava ?kriniarov &#8211; J\u00a8\u00a2n Jakabovic &#8211; Lor\u00a8\u00a2nt Peternai, Journal of Electrical Engineering, Vol. 58, No. 3, 2007, pp. 173\u00a8C176<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/iel5\/4391083\/4391084\/04391580.pdf\" target=\"_blank\">&#8220;Theoretical and Experimental Analysis of Temperature-Insensitive 655-nm Resonant-Cavity LEDs&#8221;<\/a><\/b>,<br \/>\nChen, Jun-Rong; Chang, Yi-An; Kuol, Hao-Chung; Lu, Tien-Chang; Kuo, Yen-Kuang; Wang, Shing-Chung; CLEO\/Pacific Rim 2007, 26-31 Aug. 2007<\/li>\n<li><b>&#8220;Comprehensive modelling of resonant-cavity light-emitting diode&#8221;<\/b>,<br \/>\nLi Z. Q.; Li Z. M. Simon, Physica status solidi. C. Current topics in solid state physics, Vol. 4, No. 5, pp. 1633-1636<\/li>\n<li><b>&#8220;Two-dimensional simulation of GaInP\/GaAs\/Ge triple junction solar cell&#8221;<\/b>,<br \/>\nLi Z. Q.; Xiao Y. G.; Li Z. M. Simon, Physica status solidi. C. Current topics in solid state physics, Vol. 4, No. 5, pp. 1637-1640<\/li>\n<li><b>&#8220;Dynamic drift-diffusion simulation of InP\/InGaAs SAGCM APD&#8221;<\/b>,<br \/>\nXiao Y. G.; Li Z. Q.; Li Z. M. Simon, Physica status solidi. C. Current topics in solid state physics, Vol. 4, No. 5, pp. 1641-1645<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1117\/12.732682\" target=\"_blank\">&#8220;Modeling of resonant cavity enhanced separate absorption charge and multiplication avalanche photodiodes by Crosslight APSYS&#8221;<\/a><\/b>,<br \/>\nY. G. Xiao, Z. Q. Li, and Z. M. Simon Li, Proceedings of SPIE &#8212; Volume 6660, Infrared Systems and Photoelectronic Technology II, (Sep. 12, 2007)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1117\/12.732664\" target=\"_blank\">&#8220;Modeling of Si-based solar cells with V-grooved surface texture by Crosslight APSYS&#8221;<\/a><\/b>,<br \/>\nY. G. Xiao, M. Lestrade, Z. Q. Li, and Z. M. S. Li , Proceedings of SPIE &#8212; Volume 6651, Photovoltaic Cell and Module Technologies, (Sep. 11, 2007)<\/li>\n<\/ul>\n<h2>2006<\/h2>\n<ul>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1016\/j.mejo.2005.09.008\" target=\"_blank\">&#8220;Avalanche photodiode with sectional InGaAsP\/InP charge layer&#8221;<\/a><\/b>,<br \/>\nD. Ha\u0161ko, J. Kov\u00e1\u010d, F. Uherek, J. \u0160kriniarov\u00e1, J. Jakabovi\u010d &amp; L. Peternai, Microelectronics Journal,Volume 37, Issue 6, June 2006, pp. 483-6<\/li>\n<li><b>&#8220;3D Simulations on Realistic GaN-Based Light-Emitting Diodes&#8221;<\/b>,<br \/>\nSimon Li, Z.Q. Li, O. Shmatov, C.S. Xia, W. Lu, Materials Research Society, Paper #: 0892-FF12-12.<\/li>\n<li><b>&#8220;Modeling of multi-junction solar cells by Crosslight APSYS&#8221;<\/b>,<br \/>\nLi, Z. Q.; Xiao, Y. G.; Li, Z. M. Simon, High and Low Concentration for Solar Electric Applications. Proceedings of the SPIE, Volume 6339, pp. 633909 (2006).<\/li>\n<li><b><a href=\"http:\/\/engine.cqvip.com\/content\/citation.dll?id=23516866\" target=\"_blank\">&#8220;Red Light Vertical-Cavity Surface-Emitting Lasers&#8221;<\/a><\/b>,<br \/>\nZHANG Yan, PENG Biao, LIU Guang-yu, SUN Yah-fang, LI Te &amp; CUI Jin-jiang; OME Information Vol. 12 (2006), pp.27-34<\/li>\n<li><b><a href=\"http:\/\/inoe.inoe.ro\/JOAM\/pdf8_1\/Lysak.pdf\" target=\"_blank\">&#8220;Top mirror optimization of high-speed intracavity-contacted oxide-confined vertical-cavity surface-emitting lasers&#8221;<\/a><\/b>,<br \/>\nV. V. Lysak, Ki Soo Chang &amp; Y.T. Lee, Journal of Optoelectronics and Advanced Materials, Vol. 8, No. 1, February 2006, pp. 355-358<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/iel5\/4454462\/4454463\/04454553.pdf\" target=\"_blank\">&#8220;Structure optimization of high speed intracavity-contacted oxide-confined VCSELs&#8221;<\/a><\/b>,<br \/>\nV.V. Lysak &amp; Y.T.Lee, Joint International Conference on Optical Internet and Next Generation Network (2006)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1007\/s11082-006-9031-y\" target=\"_blank\">&#8220;Accurate modelling of InGaN quantum wells&#8221;<\/a><\/b>,<br \/>\nHans Wenzel, Optical and Quantum Electronics, Vol. 38, No. 12-14 \/ Sep. 2006<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1143\/JJAP.45.7600\" target=\"_blank\">&#8220;Optimization of Barrier Structure for Strain-Compensated Multiple-Quantum-Well AlGaInP Laser Diodes&#8221;<\/a><\/b>,<br \/>\nMan-Fang Huang &amp; Yu-Lung Sun, Japanese Journal of Applied Physics Vol. 45, No. 10A, 2006, pp. 7600-7604.<\/li>\n<li>&#8220;<b>Study of quantum and short-channel effects for sub-50nm FINFETS,<\/b>&#8221;<br \/>\nWei-Da HU, Xiao-Shuang CHEN, Zhi-Jue QUAN, Xu-Chang ZHOU and Wei LU, Journal of Infrared and Millimeter Waves, vol. 25, No. 2, p. 90-94, 2006<\/li>\n<li>&#8220;<b>High-power distributed feedback laser diodes emitting at 820 nm,<\/b>&#8221;<br \/>\nShenghui FU, Yuan Zhong, Guofeng Song, Lianghui Chen, Chinese Journal of Semiconductors, vol. 27, No. 6, p. 966-969, 2006.<\/li>\n<li>&#8220;<b>Effects of Built-In Polarization on InGaN-GaN Vertical-Cavity Surface-Emitting Lasers,<\/b>&#8221;<br \/>\nJoachim Piprek, Robert Farrell, Steve DenBaars, and Shuji Nakamura, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 1, JANUARY 1, 2006, p.7<\/li>\n<li>&#8220;<b>A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling<\/b>&#8220;,<br \/>\nH. Wenzel, R. G\u00a8\u00b9ther, A. M. Shams-Zadeh-Amiri, Member, IEEE, and P. Bienstman, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 1, JANUARY 2006, p. 64<\/li>\n<li>Man-Fang Huang, Member, IEEE, and Tsung-Hung Lu, &#8221;<br \/>\n<b>Optimization of the Active-Layer Structure forthe Deep-UV AlGaN Light-Emitting Diodes,&#8221;<\/b><br \/>\nIEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 8, AUGUST 2006, p. 820<\/li>\n<li>H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park,<br \/>\n<b>&#8220;Highly stable temperature characteristics of InGaN blue laser diodes&#8221;<\/b>,<br \/>\nAPPLIED PHYSICS LETTERS 89, 031122 (2006)<\/li>\n<li>O. Douheret, K. Maknys and S. Anand,<br \/>\n<b>&#8220;Electrical Characterisation of III-V Buried Heterostructure Lasers by Scanning Capacitance Microscopy&#8221;<\/b>,<br \/>\nin NATO Science Series, Volume 186, Springer Netherlands, 2006, Pages 413-424<\/li>\n<li>Christoph Wachter,<br \/>\n&#8220;<b>INTEGRATED OPTICS DESIGN: SOFTWARE TOOLS AND DIVERSIFIED APPLICATIONS<\/b>&#8220;,<br \/>\nin NATO Science Series II: Mathematics, Physics and Chemistry Frontiers in Planar Lightwave Circuit Technology, Design, Simulation, and Fabrication, Siegfried Janz, Jiri Ctyroky and Stoyan Tanev, ed., Springer Netherlands 2006<\/li>\n<li>Yi-An Chang, Sheng-Horng Yen, Te-Chung Wang, Hao-Chung Kuo, Yen-Kuang Kuo, Tien-Chang Lu and Shing-Chung Wang,<br \/>\n<strong>&#8220;<\/strong><b>Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes,&#8221;<\/b><br \/>\nSemicond. Sci. Technol. 21 No 5 (May 2006) 598-603<\/li>\n<li>Yow-Jon Lin and Yow-Lin Chu,<br \/>\n&#8220;<b>Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique,&#8221;<\/b><br \/>\nSemicond. Sci. Technol. 21 No 8 (August 2006) 1172-117<\/li>\n<li>D. Y. Lin, W. C. Lin, and J. J. Shiu,<br \/>\n&#8220;<b>Optical study of the AlGaN\/GaN high electron mobility transistor structures,<\/b>&#8221;<br \/>\nPhys. Stat. Sol. (a) 203, No. 7, 1856-1860 (2006)<\/li>\n<li>Yen-Kuang KUO, Shang-Wei HSIEH and Hsiu-Fen CHEN,<br \/>\n&#8220;<b>Numerical Study on Optimization of Active Regions for um AlGaInAs and InGaAsN Material Systems&#8221;<\/b>,<br \/>\nJapanese Journal of Applied Physics, Vol. 45, No. 3A, 2006, pp. 1588-1590<\/li>\n<li>Bao-Jen Pong, Chi-Hsing Chen, Sheng-Horng Yen, Jin-Fu Hsu, Chun-Ju Tun, Yen-Kuang Kuo, Cheng-Huang Kuo, Gou-Chung Chi,<br \/>\n<strong>&#8220;Abnormal blue shift of InGaN micro-size light emitting diodes&#8221;<\/strong>,<br \/>\nSolid-State Electronics 50 (2006) 1588-159<\/li>\n<li>Takashi Kyonoa, Hideki Hirayama, Katsushi Akita, Takao Nakamura, Masahiro Adachi and Koshi Ando,<br \/>\n<b>&#8220;Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates&#8221;<\/b>,<br \/>\nJOURNAL OF APPLIED PHYSICS 99, 114509 (2006)<\/li>\n<li>I. Ahmad, V. Kasisomayajula, D. Y. Song, L. Tian, J. M. Berg, and M. Holtz,<br \/>\n<strong>&#8220;Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations&#8221;<\/strong>,<br \/>\nJOURNAL OF APPLIED PHYSICS 100, 113718 (2006)<\/li>\n<li>Joachim Piprek,<br \/>\n<strong>&#8220;GaN-based Devices: Physics and Simulation&#8221;<\/strong>,<br \/>\nProc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD&#8217;06, Singapore, 11-14 Sept. 2006,<br \/>\n<a href=\"http:\/\/www.nusod.org\/nusod06\/Frontpage_files\/MA2.pdf\" target=\"_blank\">paper MA2<\/a><\/li>\n<li>S.-H. Yen, B.J. Chen, Y.-K. Kuo,<br \/>\n<b>&#8220;Simulation of InGaN Violet and Ultraviolet Multiple-Quantum-Well Laser Diodes&#8221;<\/b>,<br \/>\nProc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD&#8217;06, Singapore, 11-14 Sept. 2006,<br \/>\n<a href=\"http:\/\/www.nusod.org\/nusod06\/Frontpage_files\/MC1.pdf\" target=\"_blank\">paper MC1<\/a><\/li>\n<li>C. S. Xia, W. Lu, Z. M. Simon Li, Z. Q. Li,<br \/>\n<b>&#8220;Simulation of InGaN\/GaN multiple quantum well light emitting diodes with Quantum Dot electrical and optical effects&#8221;<\/b>,<br \/>\nProc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD&#8217;06, Singapore, 11-14 Sept. 2006,<br \/>\n<a href=\"http:\/\/www.nusod.org\/nusod06\/Frontpage_files\/MC3.pdf\" target=\"_blank\">paper MC3<\/a><\/li>\n<li>Y. Sheng, O. Shmatov, Z. M. Simon Li,<b><br \/>\n&#8220;3D Simulation of InGaN\/GaN Micro-Ring Light-Emitting Diodes,&#8221;<\/b><br \/>\nProc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD&#8217;06, Singapore, 11-14 Sept. 2006,<br \/>\n<a href=\"http:\/\/www.nusod.org\/nusod06\/Frontpage_files\/MC5.pdf\" target=\"_blank\">paper MC5 <\/a><\/li>\n<li>M. Nadir,<b><br \/>\n&#8220;First and second order DFB lasers with GaInNAs-GaAs quantum-well&#8221;<\/b>,<br \/>\nProc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD&#8217;06, Singapore, 11-14 Sept. 2006, paper TuP9<\/li>\n<li>I.-S. Chung, Y. T. Lee,<br \/>\n<b>&#8220;Modeling of distributed Bragg reflectors for current crowding simulation in intracavity-contacted VCSEL&#8221;<\/b>,<br \/>\nProc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD&#8217;06, Singapore,<br \/>\n11-14 Sept. 2006, <a href=\"http:\/\/www.nusod.org\/nusod06\/Frontpage_files\/MA2.pdf\" target=\"_blank\">paper WB3<\/a><\/li>\n<li>Sheng-Horng Yen, Bo-Jean Chen, Mei-Ling Chen, Yen-Kuang Kuo, Yi-An Chang, and Hao-Chung Kuo,<b><br \/>\n&#8220;Fabrication and simulation of ultraviolet AlGaInN light-emitting diodes<\/b>&#8220;,<br \/>\nLight-Emitting Diodes: Research, Manufacturing, and Applications X, edited by Klaus P. Streubel, H.<br \/>\nWalter Yao, E. Fred Schubert, Proc. of SPIE Vol. 6134, 61340N-1 (2006)<\/li>\n<li>Shu-Hsuan Chang, Yung-Cheng Chang, Cheng-Hong Yang, Jun-Rong Chen, Yen-Kuang Kuo,<br \/>\n<b>&#8220;Numerical simulation of optical and electronic properties for multilayer organic light-emitting diodes and its application in engineering education&#8221;<\/b>,<br \/>\nLight-Emitting Diodes: Research, Manufacturing, and Applications X,<br \/>\nedited by Klaus P. Streubel, H. Walter Yao, E. Fred Schubert, Proc. of SPIE Vol. 6134, 61340R-1 (2006)<\/li>\n<li>Y. G. Xiao, Z. Q. Li, Z. M. Simon Li, <b><br \/>\n&#8220;Modeling of avalanche photodiodes by Crosslight APSYS&#8221;<\/b>,<br \/>\nInfrared and Photoelectronic Imagers and Detector Devices II, edited by Randolph E. Longshore, Ashok Sood, Proc. of SPIE Vol. 6294, 62940Z-1 (2006)<\/li>\n<li>Z.Q. Li, Alfred K. M. Lam, and Z. Simon Li,<br \/>\n<b>&#8220;Analysis of a Surface-normal Coupled-Quantum-Well Modulator at 1.55 \u03bcm<\/b>&#8220;,<br \/>\nPhysics and Simulation of Optoelectronic Devices XIV, edited by Marek Osinski, Fritz Henneberger, Yasuhiko Arakawa, Proc. of SPIE Vol. 6115, 611508-1 (2006)<\/li>\n<li>Yen-Kuang Kuo, Sheng-Horng Yen, Ming-Wei Yao,<br \/>\n<b>&#8220;Optimization study on active layers and optical performance for 1.3-um AlGaInAs and InGaNAs semiconductor lasers&#8221;<\/b>,<br \/>\nPhysics and Simulation of Optoelectronic Devices XIV, edited by Marek Osinski, Fritz Henneberger, Yasuhiko Arakawa, Proc. of SPIE Vol. 6115, 611526-1 (2006)<\/li>\n<li>Yen-Kuang Kuo, Sheng-Horng Yen, Jun-Rong Chen,<br \/>\n<b>&#8220;Numerical simulation of AlInGaN ultraviolet light-emitting diodes&#8221;<\/b><br \/>\nOptoelectronic Devices: Physics, Fabrication, and Application III, edited by Joachim Piprek, Jian Jim Wang, Proceedings of SPIE Vol. 6368, 636812 (2006)<\/li>\n<li>H. Wenzel, R. G\u00a8\u00b9ther, A. M. Shams-Zadeh-Amiri and P. Bienstman,<br \/>\n<b>&#8220;A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling&#8221;<\/b>,<br \/>\nIEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 1, JANUARY 2006,p. 64<\/li>\n<li>Yi-An Chang, Sheng-Horng Yen, Te-ChungWang, Hao-Chung Kuo, Yen-Kuang Kuo, Tien-Chang Lu and Shing-Chung Wang,<br \/>\n&#8220;<b>Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes<\/b>&#8220;,<br \/>\nSemicond. Sci. Technol. 21 (2006) 598-603<\/li>\n<li>Yow-Jon Lin1 and Yow-Lin Chu,<br \/>\n<b>&#8220;Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique&#8221;<\/b>,<br \/>\nSemicond. Sci. Technol. 21 (2006) 1172-1175<\/li>\n<li>Yi-An Chang, Tsung-Shine Ko, Jun-Rong Chen2, Fang-I Lai,Chun-Lung Yu, I-Tsung Wu, Hao-Chung Kuo,Yen-Kuang Kuo, Li-Wen Laih, Li-Horng Laih, Tin-Chang Lu and Shing-Chung Wang,<br \/>\n<b>&#8220;The carrier blocking effect on 850 nm InAlGaAs\/AlGaAs vertical-cavity surface-emitting lasers&#8221;<\/b>,<br \/>\nSemicond. Sci. Technol. 21 (2006) 1488-1494<\/li>\n<li>Shang-Wei Hsieh and Yen-Kuang Kuo,<br \/>\n<b>&#8220;A numerical study on characteristic temperature of short-cavity 1.3-um AlGaInAs\/InP MQW lasers&#8221;<\/b>,<br \/>\nApplied Physics A: Materials Science &amp; Processing, Volume 82, Number 2<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"<p>2008 &#8220;2D-simulation of inverted metamorphic GaInP [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"parent":448,"menu_order":2,"comment_status":"closed","ping_status":"open","template":"","meta":[],"_links":{"self":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages\/311"}],"collection":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/comments?post=311"}],"version-history":[{"count":0,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages\/311\/revisions"}],"up":[{"embeddable":true,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages\/448"}],"wp:attachment":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/media?parent=311"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}