{"id":304,"date":"2014-01-20T18:50:46","date_gmt":"2014-01-20T18:50:46","guid":{"rendered":"http:\/\/www.crosslightsoftware.ca\/?page_id=304"},"modified":"2014-01-20T18:50:46","modified_gmt":"2014-01-20T18:50:46","slug":"publications-2009-2011","status":"publish","type":"page","link":"https:\/\/crosslight.com.cn\/wordpress\/publications\/publications-2009-2011","title":{"rendered":"2009 &#8211; 2011\u671f\u520a\u8bba\u6587"},"content":{"rendered":"<h2>2011<\/h2>\n<ul class=\"publist\">\n<li><b><a href=\"http:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssa.201026369\/abstract\" target=\"_blank\">\u201cCorrelation of barrier material and quantum\u2010well number for InGaN\/(In) GaN blue light\u2010emitting diodes\u201d<\/a><\/b>,<br \/>\nJ. Y. Chang, Y. K. Kuo, and M. C. Tsai, physica status solidi (a), Vol. 208, No. 3, 2011, doi:10.1002\/pssa.201026369<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/98\/3\/10.1063\/1.3544929\" target=\"_blank\">\u201cComment on \u201cThe impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN-InGaN photovoltaic devices\u201d[Appl. Phys. Lett. 96, 051107 (2010)]\u201d<\/a><\/b>,<br \/>\nJ.-Y. Chang and Y.-K. Kuo, Applied Physics Letters, Vol. 98, No. 3, 2011, doi:10.1063\/1.3544929<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/ol\/abstract.cfm?uri=ol-36-17-3500\" target=\"_blank\">\u201cNumerical investigation on the enhanced carrier collection efficiency of Ga-face GaN\/InGaN pin solar cells with polarization compensation interlayers\u201d<\/a><\/b>,<br \/>\nJ.-Y. Chang, B.-T. Liou, H.-W. Lin, Y.-H. Shih, S.-H. Chang, and Y.-K. Kuo, Optics letters, Vol. 36, No. 17, 2011, doi:10.1364\/OL.36.003500<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=5680622\" target=\"_blank\">\u201cA Simulation-Based LED Design Project in Photonics Instruction Based on Industry\u2013University Collaboration\u201d<\/a><\/b>,<br \/>\nS.-H. Chang, M.-L. Chen, Y.-K. Kuo, and Y.-C. Shen, Education, IEEE Transactions on, Vol. 54, No. 4, 2011, doi:10.1109\/TE.2010.2098877<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6041121\" target=\"_blank\">\u201cStudy of InGaN\/GaN\/InGaN multi-layer barrier in GaN-based light emitting diode\u201d<\/a><\/b>,<br \/>\nL. Cheng, C. Xu, Y. Sheng, W. Hu, W. Lu, and Z. Li, Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on, Vol. No. 2011, doi:10.1109\/NUSOD.2011.6041121<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=5595695\" target=\"_blank\">\u201cSimulation for light power distribution of 3D InGaN\/GaN MQW LED with textured surface\u201d<\/a><\/b>,<br \/>\nL.-W. Cheng, Y. Sheng, C.-S. Xia, W. Lu, M. Lestrade, and Z.-M. Li, Optical and quantum electronics, Vol. 42, No. 11-13, 2011, doi:10.1109\/NUSOD.2010.5595695<\/li>\n<li><b><a href=\"http:\/\/proceedings.spiedigitallibrary.org\/proceeding.aspx?articleid=721442\" target=\"_blank\">\u201cGrowth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate\u201d<\/a><\/b>,<br \/>\nC.-H. Chiu, D.-W. Lin, Z.-Y. Li, S.-C. Ling, H.-C. Kuo, T.-C. Lu, et al., SPIE OPTO, Vol. No. 2011, doi:10.1117\/12.876656<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1882-0786\/4\/1\/012105\" target=\"_blank\">\u201cReduction of Efficiency Droop in Semipolar (1101) InGaN\/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates\u201d<\/a><\/b>,<br \/>\nC.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, et al., Applied physics express, Vol. 4, No. 1, 2011, doi:10.1143\/APEX.4.012105<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6193826\" target=\"_blank\">\u201cDesign of a Coupled Quantum Well Modulator with Enhanced Modulation Efficiency\u201d<\/a><\/b>,<br \/>\nB. A. Clare, K. A. Mudge, and K. J. Grant, Conference on Lasers and Electro-Optics\/Pacific Rim, Vol. No. 2011, doi:10.1109\/IQEC-CLEO.2011.6193826<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6186482\" target=\"_blank\">\u201cEffects of quantum wells position and background doping on the performance of multiple quantum well solar cells\u201d<\/a><\/b>,<br \/>\nH. Fujii, Y. Wang, Y. Nakano, and M. Sugiyama, Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Vol. No. 2011, doi:10.1109\/PVSC.2011.6186482<\/li>\n<li><b><a href=\"http:\/\/porto.polito.it\/2439008\/\" target=\"_blank\">\u201cEffects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach\u201d<\/a><\/b>,<br \/>\nM. Goano, S. Chiaria, M. Calciati, F. Bertazzi, G. Ghione, M. Meneghini, et al., International Conference on Nitride Semiconductors, 9th (ICNS-9), Vol. No. 2011,<\/li>\n<li><b><a href=\"http:\/\/wulixb.iphy.ac.cn\/EN\/abstract\/abstract17594.shtml\" target=\"_blank\">\u201cTheoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED [J]\u201d<\/a><\/b>,<br \/>\nZ. Y.-Y. F. Guan-Han, Acta Physica Sinica, Vol. 1, No. 2011,<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6157293\" target=\"_blank\">\u201cA simulation study of vertical tunnel field effect transistors\u201d<\/a><\/b>,<br \/>\nZ.-F. Han, G.-P. Ru, and G. Ruan, ASIC (ASICON), 2011 IEEE 9th International Conference on, Vol. No. 2011, doi:10.1109\/ASICON.2011.6157293<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6186360\" target=\"_blank\">\u201cOptimum design of InGaP\/GaAs\/Ge triple-junction solar cells with sub-wavelength surface texture structure\u201d<\/a><\/b>,<br \/>\nP.-H. Huang, H. W. Wang, M.-A. Tsai, F.-l. Lai, S.-Y. Kuo, H. Kuo, et al., Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Vol. No. 2011, doi:10.1109\/PVSC.2011.6186360<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=5706353\" target=\"_blank\">\u201cTop-Emitting Organic Light-Emitting Diodes With Step-Doped Emission Layers\u201d<\/a><\/b>,<br \/>\nY.-H. Huang, B.-T. Liou, J.-D. Chen, and Y.-K. Kuo, Photonics Technology Letters, IEEE, Vol. 23, No. 8, 2011, doi:10.1109\/LPT.2011.2110641<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=5744095\" target=\"_blank\">\u201cNumerical Simulation of Single-Junction In Ga P Solar Cell With Compositional Grading Configuration\u201d<\/a><\/b>,<br \/>\nY.-K. Kuo, B.-C. Lin, J.-Y. Chang, and Y.-A. Chang, Photonics Technology Letters, IEEE, Vol. 23, No. 12, 2011, doi:10.1109\/LPT.2011.2140100<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=5995143\" target=\"_blank\">\u201cImprovement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier\u201d<\/a><\/b>,<br \/>\nY.-K. Kuo, Y.-H. Shih, M.-C. Tsai, and J.-Y. Chang, Photonics Technology Letters, IEEE, Vol. 23, No. 21, 2011, doi:10.1109\/LPT.2011.2165838<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/99\/9\/10.1063\/1.3633268\" target=\"_blank\">\u201cAdvantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers\u201d<\/a><\/b>,<br \/>\nY.-K. Kuo, T.-H. Wang, J.-Y. Chang, and M.-C. Tsai, Applied Physics Letters, Vol. 99, No. 9, 2011, doi:10.1063\/1.3633268<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/20\/3\/037807\" target=\"_blank\">\u201cOptimization of multiple quantum well structure for GaN-based blue light emitting diode\u201d<\/a><\/b>,<br \/>\nL. Lei, X. Zeng, Y. Fan, and Y. Zhang, Journal of Optoelectronics Laser, Vol. 22, No. 9, 2011, doi:10.1088\/1674-1056\/20\/3\/037807<\/li>\n<li><b><a href=\"http:\/\/link.springer.com\/article\/10.1007%2Fs11082-011-9458-7\" target=\"_blank\">\u201cModeling of polarization effects in InGaN PIN solar cells\u201d<\/a><\/b>,<br \/>\nM. Lestrade, Z. Li, Y. Xiao, and Z. S. Li, Optical and quantum electronics, Vol. 42, No. 11-13, 2011, doi:10.1007\/s11082-011-9458-7<\/li>\n<li><b><a href=\"http:\/\/www.springer.com\/engineering\/circuits+%26+systems\/book\/978-1-4614-0480-4\" target=\"_blank\">\u201c3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics\u201d<\/a><\/b>,<br \/>\nS. Li and Y. Fu, Springer, 2011, 1461404819<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6157325\" target=\"_blank\">\u201cSimulation of carrier transport in quantum cascade lasers\u201d<\/a><\/b>,<br \/>\nY. Li, G.-P. Ru, and Y.-Y. Li, ASIC (ASICON), 2011 IEEE 9th International Conference on, Vol. No. 2011, doi:10.1109\/ASICON.2011.6157325<\/li>\n<li><b><a href=\"http:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssa.201026489\/abstract\" target=\"_blank\">\u201cEffects of polarization charge on the photovoltaic properties of InGaN solar cells\u201d<\/a><\/b>,<br \/>\nZ. Li, M. Lestrade, Y. Xiao, and S. Li, physica status solidi (a), Vol. 208, No. 4, 2011, doi:10.1002\/pssa.201026489<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1347-4065\/50\/8R\/080212\" target=\"_blank\">\u201cImprovement of performance in p-side down InGaN\/GaN light-emitting diodes with graded electron blocking layer\u201d<\/a><\/b>,<br \/>\nZ. Li, M. Lestrade, Y. Xiao, and Z. S. Li, Japanese Journal of Applied Physics, Vol. 50, No. 8, 2011, doi:10.1143\/JJAP.50.080212<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6117732\" target=\"_blank\">\u201c3D modeling of CMOS image sensor: From process to opto-electronic response\u201d<\/a><\/b>,<br \/>\nZ. S. Li, Y. Xiao, K. Uehara, M. Lestrade, S. Gao, Y. Fu, et al., Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of, Vol. No. 2011, doi:10.1109\/EDSSC.2011.6117732<\/li>\n<li><b><a href=\"http:\/\/spie.org\/Publications\/Proceedings\/Paper\/10.1117\/12.874157\" target=\"_blank\">\u201cImprovement in viewing angle properties of top-emitting organic light-emitting devices\u201d<\/a><\/b>,<br \/>\nB.-T. Liou, M.-C. Tsai, Y.-H. Huang, F.-M. Chen, Y.-R. Lin, and Y.-K. Kuo, SPIE OPTO, Vol. No. 2011, doi:10.1117\/12.874157<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/oe\/abstract.cfm?uri=oe-19-19-18319\" target=\"_blank\">\u201cEffect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes\u201d<\/a><\/b>,<br \/>\nT. Lu, S. Li, K. Zhang, C. Liu, Y. Yin, L. Wu, et al., Optics express, Vol. 19, No. 19, 2011, doi:10.1364\/OE.19.018319<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6108787\" target=\"_blank\">\u201cGaInNAs QW with GaNAs intermediate layer for long wavelength laser\u201d<\/a><\/b>,<br \/>\nF. Maskuriy, M. Alias, S. Mitani, and A. Manaf, Industrial Electronics and Applications (ISIEA), 2011 IEEE Symposium on, Vol. No. 2011, doi:10.1109\/ISIEA.2011.6108787<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6106823\" target=\"_blank\">\u201cLow internal loss GaInNAs laser diode with InGaAs\/GaNAs\/GaAs barrier\u201d<\/a><\/b>,<br \/>\nF. Maskuriy, M. Alias, S. Mitani, and A. Manaf, Photonics (ICP), 2011 IEEE 2nd International Conference on, Vol. No. 2011, doi:10.1109\/ICP.2011.6106823<\/li>\n<li><b><a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S1386947711003237\" target=\"_blank\">\u201cDark current characteristics of InAs\/GaNAs strain-compensated quantum dot solar cells\u201d<\/a><\/b>,<br \/>\nT. Morioka and Y. Okada, Physica E: Low-dimensional Systems and Nanostructures, Vol. 44, No. 2, 2011, doi:10.1016\/j.physe.2011.09.001<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6186459\" target=\"_blank\">\u201cUsing measurements of fill factor at high irradiance to deduce heterobarrier band offsets\u201d<\/a><\/b>,<br \/>\nJ. Olson, M. Steiner, and A. Kanevce, Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Vol. No. 2011, doi:10.1109\/PVSC.2011.6186459<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6041211\" target=\"_blank\">\u201cPolarization-doped AlGaN light-emitting diode\u201d<\/a><\/b>,<br \/>\nJ. Piprek, Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on, Vol. No. 2011, doi:10.1109\/NUSOD.2011.6041211<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6032725\" target=\"_blank\">\u201cEfficiency and electron leakage characteristics in GaN-based light-emitting diodes without AlGaN electron-blocking-layer structures\u201d<\/a><\/b>,<br \/>\nH.-Y. Ryu, J.-I. Shim, C.-H. Kim, J. H. Choi, H. M. Jung, M.-S. Noh, et al., Photonics Technology Letters, IEEE, Vol. 23, No. 24, 2011, doi:10.1109\/LPT.2011.2170409<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/20\/9\/098503\" target=\"_blank\">\u201cThe advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer\u201d<\/a><\/b>,<br \/>\nL. Tai-Ping, L. Shu-Ti, Z. Kang, L. Chao, X. Guo-Wei, Z. Yu-Gang, et al., Chinese Physics B, Vol. 20, No. 9, 2011, doi:10.1088\/1674-1056\/20\/9\/098503<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/20\/10\/108504\" target=\"_blank\">\u201cBlue InGaN light-emitting diodes with dip-shaped quantum wells\u201d<\/a><\/b>,<br \/>\nL. Tai-Ping, L. Shu-Ti, Z. Kang, L. Chao, X. Guo-Wei, Z. Yu-Gang, et al., Chinese Physics B, Vol. 20, No. 10, 2011, doi:10.1088\/1674-1056\/20\/10\/108504<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6193935\" target=\"_blank\">\u201cEfficiency Droop Improvement in InGaN\/GaN Light-emitting Diodes by Graded-composition Electron Blocking Layer\u201d<\/a><\/b>,<br \/>\nC. Wang, W. Chang, S. Chang, J. Li, H. Kuo, T. Lu, et al., Conference on Lasers and Electro-Optics\/Pacific Rim, Vol. No. 2011, doi:10.1109\/IQEC-CLEO.2011.6193935<\/li>\n<li><b><a href=\"http:\/\/proceedings.spiedigitallibrary.org\/proceeding.aspx?articleid=1349773\" target=\"_blank\">\u201cImprovement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions\u201d<\/a><\/b>,<br \/>\nC. Wang, D. Lin, C. Chiu, S. Chang, Z. Li, J. Li, et al., Proc. of SPIE Vol, Vol. 7954, No. 2011, doi:10.1117\/12.874935<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/abstract.cfm?uri=CLEO_SI-2011-CWF4\" target=\"_blank\">\u201cEfficiency Droop Reduction in InGaN\/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells\u201d<\/a><\/b>,<br \/>\nC.-H. Wang, W.-T. Chang, S.-P. Chang, J. Li, H.-c. Kuo, T.-C. Lu, et al., CLEO: Science and Innovations, Vol. No. 2011, doi:10.1364\/CLEO_SI.2011.CWF4<\/li>\n<li><b><a href=\"http:\/\/spie.org\/Publications\/Proceedings\/Paper\/10.1117\/12.874909\" target=\"_blank\">\u201cEfficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers\u201d<\/a><\/b>,<br \/>\nT.-H. Wang, J.-Y. Chang, M.-C. Tsai, and Y.-K. Kuo, SPIE OPTO, Vol. No. 2011, doi:10.1117\/12.874909<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=5987179\" target=\"_blank\">\u201cEquilibrium between spontaneous polarization, piezoelectric polarization and crystal defects for blue LEDs on sapphire substrate\u201d<\/a><\/b>,<br \/>\nY. Wang, Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on, Vol. No. 2011, doi:10.1109\/MACE.2011.5987179<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1674-1056\/20\/8\/087304\" target=\"_blank\">\u201cTrapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics\u201d<\/a><\/b>,<br \/>\nL. Wei-Yi, R. Guo-Ping, J. Yu-Long, and R. Gang, Chinese Physics B, Vol. 20, No. 8, 2011, doi:10.1088\/1674-1056\/20\/8\/087304<\/li>\n<li><b><a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/99\/23\/10.1063\/1.3665252\" target=\"_blank\">\u201cDroop improvement in blue InGaN\/GaN multiple quantum well light-emitting diodes with indium graded last barrier\u201d<\/a><\/b>,<br \/>\nC. S. Xia, Z. S. Li, W. Lu, Z. H. Zhang, Y. Sheng, and L. W. Cheng, Applied Physics Letters, Vol. 99, No. 23, 2011, doi:10.1063\/1.3665252<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=6186215\" target=\"_blank\">\u201cModeling of CdZnTe\/CdTe\/Si triple junction solar cells\u201d<\/a><\/b>,<br \/>\nY. Xiao, Z. Li, M. Lestrade, and Z. S. Li, Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Vol. No. 2011, doi:10.1109\/PVSC.2011.6186215<\/li>\n<li><b><a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?tp=&amp;arnumber=6110326\" target=\"_blank\">\u201c3D modeling of active pixel sensor with microlens\u201d<\/a><\/b>,<br \/>\nY. Xiao, Z. S. Li, K. Uehara, M. Lestrade, and Z. Li, Microopics Conference (MOC), 2011 17th, Vol. No. 2011,<\/li>\n<li><b><a href=\"http:\/\/en.cnki.com.cn\/Article_en\/CJFDTOTAL-GNCQ201106007.htm\" target=\"_blank\">\u201cThe design and simulation of four-junction solar cell InGaP\/GaAs\/GaInAsN\/Ge\u201d<\/a><\/b>,<br \/>\nG.-f. ZHANG, J.-y. TANG, J.-f. CHEN, F.-c. ZHOU, B.-x. Lin, and J.-j. LIAO, Journal of Functional Materials and Devices, Vol. 6, No. 2011,<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/abstract.cfm?uri=SumSession-2011-Tu17\" target=\"_blank\">\u201cDesign and Analysis of High-temperature Operating 795-nm VCSELs for&lt; sup&gt; 87 Rb Based Chip-Scale Atomic Clock\u201d<\/a><\/b>,<br \/>\nJ. Zhang, CIOMP-OSA Summer Session: Lasers and Their Applications, Vol. No. 2011, doi:10.1364\/SUMSESSION.2011.Tu17<\/li>\n<li><b><a href=\"http:\/\/proceedings.spiedigitallibrary.org\/proceeding.aspx?articleid=720987\" target=\"_blank\">\u201c1550 nm DFB semiconductor lasers with high power and low noise\u201d<\/a><\/b>,<br \/>\nY.-G. Zhao, A. Nikolov, and R. Dutt, SPIE OPTO, Vol. No. 2011, doi:10.1117\/12.873973<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/EDSSC.2011.6117732\" target=\"_blank\">&#8220;3D Modeling of CMOS Image Sensor: From Process to Opto-Electronic Response&#8221;<\/a><\/b>,<br \/>\nZ.M. Simon Li, Y.G. Xiao et. al., 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC), Tianjin China, 17-18 Nov. 2011, doi:10.1109\/EDSSC.2011.6117732<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/EDSSC.2011.6117720\" target=\"_blank\">&#8220;Breakdown Voltage Enhancement for Power AlGaN\/GaN HEMTs with Air-bridge Field Plate&#8221;<\/a><\/b>,<br \/>\nGang Xie, Edward Xu et al., 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC), Tianjin China, 17-18 Nov. 2011, doi:10.1109\/EDSSC.2011.6117720<\/li>\n<li><b><a href=\"http:\/\/link.aip.org\/link\/?JAP\/110\/093109\" target=\"_blank\">&#8220;Simulation of quantum cascade lasers&#8221;<\/a><\/b>,<br \/>\nZ.-M. Simon Li; Ying-Ying Li; Guo-Ping Ru; J. Appl. Phys. 110, 093109 (2011); doi:10.1063\/1.3660207<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3591967\" target=\"_blank\">&#8220;Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier &#8220;<\/a><\/b>,<br \/>\nTu, Po-Min; Chang, Chun-Yen; Huang, Shih-Cheng; Chiu, Ching-Hsueh; Chang, Jet-Rung; Chang, Wei-Ting; Wuu, Dong-Sing; Zan, Hsiao-Wen; Lin, Chien-Chung; Kuo, Hao-Chung and Hsu, Chih-Peng; Applied Physics Letters, Vol. 98, No. 21 (May 2011), doi:10.1063\/1.3591967<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3596479\" target=\"_blank\">&#8220;MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates&#8221;<\/a><\/b>,<br \/>\nZheng, Qinghong; Huang, Feng; Ding, Kai; Huang, Jin; Chen, Dagui; Zhan, Zhibing and Lin, Zhang;<br \/>\nApplied Physics Letters, Vol. 98 No. 22 (May 2011), doi:10.1063\/1.3596479<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/LED.2011.2150195\" target=\"_blank\">&#8220;Numerical Study on the Influence of Piezoelectric Polarization on the Performance of p-on-n (0001)-Face GaN\/InGaN p-i-n Solar Cells&#8221;<\/a><\/b>,<br \/>\nJih-Yuan Chang and Yen-Kuang Kuo, IEEE Electron Device Letters, Vol. 32 No. 7 (July 2011), pp. 937 &#8211; 939, doi:10.1109\/LED.2011.2150195<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/LED.2011.2147275\" target=\"_blank\">&#8220;Novel Separate Confinement Heterostructure Design for Long-Wavelength Lasers&#8221;<\/a><\/b>,<br \/>\nYong, Y.S.; Wong, H.Y.; Yow, H.K., IEEE Electron Device Letters, Vol. 32 No. 7 (July 2011), pp. 925 &#8211; 927, DOI:10.1109\/LED.2011.2147275<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1117\/1.3572167\" target=\"_blank\">&#8220;Numerical estimations of carrier generation-recombination processes and photon recycling effect in 3-\u03bcm n-on-p HgCdTe photodiodes &#8220;<\/a><\/b>,<br \/>\nKrzysztof J\u00f3\u017awikowski, Ma\u0142gorzata Kopytko and Antoni Rogalski, Opt. Eng. 50, 061003 (May 05, 2011); doi:10.1117\/1.3572167<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/\" target=\"_blank\">&#8220;Numerical study on efficiency droop of blue InGaN light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nYen-Kuang Kuo, Jih-Yuan Chang and Jen-De Chen, Conference Paper: Physics and Simulation of Optoelectronic Devices XIX, Photonics West 2011, San Francisco, California, USA, Proc. SPIE 7933, 793317 (2011); doi:10.1117\/12.874849<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3565173\" target=\"_blank\">&#8220;Theoretical study of polarization-doped GaN-based light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nL. Zhang, K. Ding, N. X. Liu, T. B. Wei, X. L. Ji, P. Ma, J. C. Yan, J. X. Wang, Y. P. Zeng and J. M. Li, Appl. Phys. Lett. 98, 101110 (2011); doi:10.1063\/1.3565173<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3601469\" target=\"_blank\">&#8220;Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition&#8221;<\/a><\/b>,<br \/>\nL. Zhang, X. C. Wei, N. X. Liu, H. X. Lu, J. P. Zeng, J. X. Wang, Y. P. Zeng, and J. M. Li, Appl. Phys. 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Danesh and E. Rajaeia, Optics Communications, Volume 284, Issue 1, 1 January 2011, Pages 330-340, doi:10.1016\/j.optcom.2010.08.044<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1007\/s11082-011-9444-0\" target=\"_blank\">&#8220;Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser &#8220;<\/a><\/b>,<br \/>\nWei Shi, Behnam Faraji, Mark Greenberg, Jesper Berggren, Yu Xiang, Mattias Hammar, Michel Lestrade, Zhi-Qiang Li, Z. M. Simon Li and Lukas Chrostowski, Optical and Quantum Electronics, DOI: 10.1007\/s11082-011-9444-0<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/abstract.cfm?URI=josk-15-2-124\" target=\"_blank\">&#8220;Design and Simulation of an 808 nm InAlAs\/AlGaAs GRIN-SCH Quantum Dot Laser Diode&#8221;<\/a><\/b>,<br \/>\nTrevor Chan, Sung-Hun Son, Kyoung-Chan Kim, and Tae-Geun Kim, Journal of the Optical Society of Korea, Vol. 15, Issue 2, pp. 124-127 (2011)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3608384\" target=\"_blank\">&#8220;Temperature performance of the edge emitting transistor laser &#8220;<\/a><\/b>,<br \/>\nSong Liang, Hongliang Zhu, Duanhua Kong, Bin Niu, Lingjuan Zhao and Wei Wang, Appl. Phys. Lett. 99, 013503 (2011); doi:10.1063\/1.3608384<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1088\/1674-1056\/20\/4\/048502\" target=\"_blank\">&#8220;Comparison of nitride-based dual-wavelength light-emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers &#8220;<\/a><\/b>,<br \/>\nZhang Yun-Yan (<span class=\"mandarin\">\u5f20\u8fd0\u708e<\/span>) and Fan Guang-Han (<span class=\"mandarin\">\u8303\u5e7f\u6db5<\/span>), Chinese Phys. B, Vol. 20 No. 4 (2011), doi: 10.1088\/1674-1056\/20\/4\/048502<\/li>\n<li><b><a href=\"http:\/\/en.cnki.com.cn\/Article_en\/CJFDTOTAL-WDZC201101018.htm\" target=\"_blank\">&#8220;Far-field characteristics simulation analysis of blue-violet LD&#8221;<\/a><\/b>,<br \/>\nGuo Wenwen, Electronic Test, 2011-01, DOI:CNKI:SUN:WDZC.0.2011-01-018<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/LPT.2010.2091119\" target=\"_blank\">&#8220;Numerical Study of Blue InGaN Light-Emitting Diodes With Varied Barrier Thicknesses&#8221;<\/a><\/b>,<br \/>\nMiao-Chan Tsai, Sheng-Horng Yen, Ying-Chung Lu, Yen-Kuang Kuo, IEEE Photonics Technology Letters, Jan.15, 2011, Vol. 23 No. 2, pp. 76-78, DOI:10.1109\/LPT.2010.2091119<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1002\/pssa.201190012\/abstract\" target=\"_blank\">&#8220;Effects of polarization charge on the photovoltaic properties of InGaN solar cells&#8221;<\/a><\/b>,<br \/>\nZ. Q. Li, M. Lestrade, Y. G. Xiao and S. Li, physica status solidi (a), 208: Apr. 2011, doi:10.1002\/pssa.201190012<\/li>\n<li><b><a href=\"http:\/\/www.ecse.rpi.edu\/Homepages\/huang\/publications\/2011_CLEO_HBT_LED.pdf\" target=\"_blank\">&#8220;Design of Three-terminal GaN Light Emitting HBT for Free Space Communication&#8221;<\/a><\/b>,<br \/>\nShengling Deng and Z.Rena Huang, Conference Paper, Quantum Electronics and Laser Science Conference (QELS), Baltimore (Maryland, USA), May 1, 2011, doi:10.1364\/CLEO_AT.2011.JWA92<\/li>\n<li><b><a href=\"http:\/\/www.opticsinfobase.org\/abstract.cfm?URI=CLEO:%20S%20and%20I-2011-CWF4\" target=\"_blank\">&#8220;Efficiency Droop Reduction in InGaN\/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells&#8221;<\/a><\/b>,<br \/>\nChao-Hsun Wang, Wei-Ting Chang, Shih-Pang Chang, Jinchai Li, Hao-chung Kuo, Tien-Chang Lu and Shing-chung Wang, Conference Paper, CLEO: Science and Innovations (CLEO: S and I), Baltimore (Maryland, USA), May 1, 2011, doi:10.1364\/CLEO_SI.2011.CWF4<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3567786\" target=\"_blank\">&#8220;Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers&#8221;<\/a><\/b>,<br \/>\nMiao-Chan Tsai, Sheng-Horng Yen and Yen-Kuang Kuo, Appl. Phys. Lett. 98, 111114 (2011); doi:10.1063\/1.3567786<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1364\/OE.19.002886\" target=\"_blank\">&#8220;Effect of current spreading on the efficiency droop of InGaN light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nHan-Youl Ryu and Jong-In Shim, Optics Express, Vol. 19, Issue 4, pp. 2886-2894 (2011), doi:10.1364\/OE.19.002886<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1364\/OE.19.012569\" target=\"_blank\">&#8220;Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs&#8221;<\/a><\/b>,<br \/>\nYan Zhang, Yongqiang Ning, Lisen Zhang, Jinsheng Zhang, Jianwei Zhang, Zhenfu Wang, Jian Zhang, Yugang Zeng, and Lijun Wang, Optics Express, Vol. 19, Issue 13, pp. 12569-12581 (2011), doi:10.1364\/OE.19.012569<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1143\/JJAP.50.04DG16\" target=\"_blank\">&#8220;Optical Characterization of an Asymmetric Quantum Well Structure for Broadband Laser Array Application&#8221;<\/a><\/b>,<br \/>\nWei-Li Chen, Japanese Journal of Applied Physics, Volume 50, Issue 4, pp. 04DG16-04DG16-4 (2011), DOI: 10.1143\/JJAP.50.04DG16<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1007\/s00339-011-6458-1\" target=\"_blank\">&#8220;Investigation of blue InGaN light-emitting diodes with step-like quantum well&#8221;<\/a><\/b>,<br \/>\nMiao-Chan Tsai, Sheng-Horng Yen and Yen-Kuang Kuo, Applied Physics A: Materials Science &amp; Processing, Volume 104, Number 2, 621-626, DOI: 10.1007\/s00339-011-6458-1<\/li>\n<\/ul>\n<h2>2010<\/h2>\n<p><!--li><b><a target=\"_blank\" href=\"http:\/\/dx.doi.org\/\">\n&quot;&quot;<\/a><\/b>,\n<\/li-->\n<ul class=\"publist\">\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3531753\" target=\"_blank\">&#8220;Hole injection and efficiency droop improvement in InGaN\/GaN light-emitting diodes by band-engineered electron blocking layer&#8221;<\/a><\/b>,<br \/>\nWang, C. H.; Ke, C. C.; Lee, C. Y.; Chang, S. P.; Chang, W. T.; Li, J. C.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C. and Wang, S. C., Applied Physics Letters, Vol. 97 No. 26 (Dec 2010), doi:10.1063\/1.3531753<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1088\/0256-307X\/27\/5\/054204\" target=\"_blank\">&#8220;Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure &#8220;<\/a><\/b>,<br \/>\nJi Lian, Zhang Shu-Ming, Jiang De-Sheng, Liu Zong-Shun, Zhang Li-Qun, Zhu Jian-Jun, Zhao De-Gang, Duan Li-Hong and Yang Hui, Chinese Physics Letters Vol. 27 No. 5, doi:10.1088\/0256-307X\/27\/5\/054204<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/JQE.2010.2046140\" target=\"_blank\">&#8220;High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer&#8221;<\/a><\/b>,<br \/>\nZhi Li; Huapu Pan; Hao Chen; Beling, A. and Campbell, J.C., IEEE Journal of Quantum Electronics, Vol. 46 No. 5 (May 2010), pp. 626 &#8211; 632, doi:10.1109\/JQE.2010.2046140<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1016\/j.solmat.2009.11.010\" target=\"_blank\">&#8220;Finite element simulations of compositionally graded InGaN solar cells&#8221;<\/a><\/b>,<br \/>\nG.F. Brown, J.W. Ager III, W. Walukiewicz and J. Wu, Solar Energy Materials and Solar Cells, Volume 94, Issue 3, March 2010, Pages 478-483, doi:10.1016\/j.solmat.2009.11.010<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.2478\/s11772-010-1035-6\" target=\"_blank\">&#8220;High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes&#8221;<\/a><\/b>,<br \/>\nM. Kopytko, K. J\u00f3\u017awikowski, A. J\u00f3\u017awikowska and A. Rogalski, Opto-Electronics Review, Volume 18, Number 3, pp. 277-283, DOI: 10.2478\/s11772-010-1035-6<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3483926\" target=\"_blank\">&#8220;Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared n-on-p HgCdTe photodiodes&#8221;<\/a><\/b>,<br \/>\nK. J\u00f3\u017awikowski, M. Kopytko, A. Rogalski and A. J\u00f3\u017awikowska, J. Appl. Phys. 108, 074519 (2010); doi:10.1063\/1.3483926<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/LPT.2010.2046483\" target=\"_blank\">&#8220;Study of InGaN\u2013GaN Light-Emitting Diodes With Different Last Barrier Thicknesses&#8221;<\/a><\/b>,<br \/>\nJun-Rong Chen; Tien-Chang Lu; Hao-Chung Kuo; Fang, K.L.; Huang, K.F.; Kuo, C.W.; Chang, C.J.; Kuo, C.T. and Shing-Chung Wang, IEEE Photonics Technology Letters, Vol. 22 No. 12 (June 15, 2010), pp. 860 &#8211; 862, doi:10.1109\/LPT.2010.2046483<\/li>\n<li><b><a href=\"http:\/\/www.sid.ir\/en\/ViewPaper.asp?ID=191596&amp;varStr=3;DANESH%20KAFTROUDI%20Z.,RAJAEI%20E.;JOURNAL%20OF%20THEORETICAL%20AND%20APPLIED%20PHYSICS%20(IRANIAN%20PHYSICAL%20JOURNAL);SEPTEMBER%202010;4;2;12;20\" target=\"_blank\">&#8220;SIMULATION AND OPTIMIZATION OF OPTICAL PERFORMANCE OF INP-BASED LONGWAVELENGTH VERTICAL CAVITY SURFACE EMITTING LASER WITH SELECTIVELY TUNNEL JUNCTION APERTURE&#8221;<\/a><\/b>,<br \/>\nDANESH KAFTROUDI Z.*,RAJAEI E., JOURNAL OF THEORETICAL AND APPLIED PHYSICS (IRANIAN PHYSICAL JOURNAL) SEPTEMBER 2010; 4(2):12-20<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3467451\" target=\"_blank\">&#8220;Investigation of dominant effect on efficiency droop in InGaN light emitting device &#8220;<\/a><\/b>,<br \/>\nKyu Sang Kim, Jin Ha Kim, Young Min Park, Su Jin Jung, Yong Jo Park and S. 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K\u0142os, Opto-Electronics Review, Volume 18, Number 3, 318-327, DOI: 10.2478\/s11772-010-1022-y<\/li>\n<li><b><a href=\"http:\/\/en.cnki.com.cn\/Article_en\/CJFDTOTAL-ZGZM201001005.htm\" target=\"_blank\">&#8220;Experimental and Theoretical Analysis on GaN Multiple Quantum Well Blue LED&#8221;<\/a><\/b>,<br \/>\nLi Weijun, China Light &amp; Lighting 2010-01, doi:CNKI:SUN:ZGZM.0.2010-01-005<\/li>\n<li><b><a href=\"http:\/\/en.cnki.com.cn\/Article_en\/CJFDTotal-JJZZ201001017.htm\" target=\"_blank\">&#8220;980 nm Vertical Cavity Surface Emitting Laser Temperature-Change Output Characteristics&#8221;<\/a><\/b>,<br \/>\nLiang Xuemei, Wang Ye, Qin Li, Li Te, Ning Yongqiang, Wang Lijun, Chinese Journal of Lasers, 2010-01, doi:CNKI:SUN:JJZZ.0.2010-01-017<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/IEMT.2010.5746766\" target=\"_blank\">&#8220;Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes&#8221;<\/a><\/b>,<br \/>\nManaf, N.A.A.; Alias, M.S.; Mitani, S.M. and Yahya, M.R., Conference paper: 2010 34th IEEE\/CPMT International Electronic Manufacturing Technology Symposium (IEMT), Nov. 30 2010-Dec. 2 2010, Melaka (Malaysia), doi:10.1109\/IEMT.2010.5746766<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/LPT.2010.2085427\" target=\"_blank\">&#8220;Investigation of Optical Performance of InGaN MQW LED With Thin Last Barrier&#8221;<\/a><\/b>,<br \/>\nSheng-Horng Yen; Meng-Lun Tsai; Miao-Chan Tsai; Shu-Jeng Chang; Yen-Kuang Kuo; IEEE Photonics Technology Letters, Vol. 22 No. 24 (Dec.15 2010), pp. 1787 &#8211; 1789, doi: 10.1109\/LPT.2010.2085427<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1007\/s00340-009-3856-6\" target=\"_blank\">&#8220;Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nJ.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo and S.-C. Wang, Applied Physics B: Lasers and Optics, Volume 98, Number 4, 779-789, DOI: 10.1007\/s00340-009-3856-6<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/PVSC.2010.5616857\" target=\"_blank\">&#8220;How shall we put multiple quantum wells in p-i-n structure for efficiency enhancement? &#8220;<\/a><\/b>,<br \/>\nSugiyama, M.; Yunpeng Wang; Soohyeck Choi; Yu Wen; Nakano, Y.; 35th IEEE Photovoltaic Specialists Conference (PVSC), 20-25 June 2010, Honolulu (HI, USA), pp. 000376 &#8211; 000379, doi:10.1109\/PVSC.2010.5616857<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1134\/S1054660X10070376\" target=\"_blank\">&#8220;Systematic study on the confinement structure design of 1.5-\u03bcm InGaAlAs\/InP multiple-quantum-well lasers &#8220;<\/a><\/b>,<br \/>\nY. S. Yong, H. Y. Wong, H. K. Yow and M. Sorel, Laser Physics, Volume 20, Number 4, pp. 811-815, DOI: 10.1134\/S1054660X10070376<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/JQE.2010.2045104\" target=\"_blank\">&#8220;Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes&#8221;<\/a><\/b>,<br \/>\nIEEE Journal of Quantum Electronics, Vol. 46 No.8 (Aug. 2010), pp. 1214 &#8211; 1220, doi:10.1109\/JQE.2010.2045104<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3507891\" target=\"_blank\">&#8220;Efficiency droop alleviation in InGaN\/GaN light-emitting diodes by graded-thickness multiple quantum wells&#8221;<\/a><\/b>,<br \/>\nWang, C. H.; Chang, S. P.; Chang, W. T.; Li, J. C.; Lu, Y. S.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C. and Wang, S. 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Appl. Phys. 108, 063107 (2010); doi:10.1063\/1.3471804<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1364\/OL.35.003285\" target=\"_blank\">&#8220;Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer&#8221;<\/a><\/b>,<br \/>\nYen-Kuang Kuo, Jih-Yuan Chang, and Miao-Chan Tsai, Optics Letters, Vol. 35, Issue 19, pp. 3285-3287 (2010), doi:10.1364\/OL.35.003285<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3301614\" target=\"_blank\">&#8220;A route to improved extraction efficiency of light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nH. Zhu, C. X. Shan, L. K. Wang, Y. Yang, J. Y. Zhang, B. Yao, D. Z. Shen and X. W. Fan, Appl. Phys. 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Fu and Zhanming Simon Li, (CMOSET&#8217;10), Whistler, Canada<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1063\/1.3327425\" target=\"_blank\">&#8220;Growth and characteristics of GaInN\/GaInN multiple quantum well light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nW.S. Lee; M.-H. Kim &amp; al., Journal of Applied Physics 107, 063102 (2010)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/doi:10.1063\/1.3371812\" target=\"_blank\">&#8220;Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping&#8221;<\/a><\/b>,<br \/>\nDi Zhu (<span class=\"mandarin\">\u6731\u8fea<\/span>), Ahmed N. Noemaun, Martin F. Schubert, Jaehee Cho, E. Fred Schubert, Mary H. Crawford and Daniel D. Koleske, Appl. Phys. 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Cho; Appl. Phys. Lett. 96, 091104 (2010)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1117\/12.841266\" target=\"_blank\">&#8220;Role of electron blocking layer in III-nitride laser diodes and light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nPhysics and Simulation of Optoelectronic Devices XVIII , Proc. SPIE, Vol. 7597, 759720 (2010)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1007\/s00339-009-5485-7\" target=\"_blank\">&#8220;Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nY.-K. Kuo; S.-H. Horng; S.-H. Yen; M.-C. Tsai; M.-F. Huang, Applied Physics A: Materials Science &amp; Processing, Volume 98, Number 3 \/ March, 2010, pp. 509-515<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/LPT.2009.2037827\" target=\"_blank\">&#8220;Temperature-Dependent Electroluminescence Efficiency in Blue InGaN\u2013GaN Light-Emitting Diodes With Different Well Widths&#8221;<\/a><\/b>,<br \/>\nWang, C.H.; Chen, J.R.; Chiu, C.H.; Kuo, H.C.; Li, Y.-L.; Lu, T.C.; Wang, S.C.; Photonics Technology Letters, IEEE, Volume: 22 , Issue: 4, 2010 , Page(s): 236 &#8211; 238<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/JQE.2009.2032426\" target=\"_blank\">&#8220;Comprehensive Modeling of Superluminescent Light-Emitting Diodes&#8221;<\/a><\/b>,<br \/>\nLi, Z. Q.; Li, Z. M. S.; Quantum Electronics, IEEE Journal of; Volume: 46 , Issue: 4 2010 , Page(s): 454 &#8211; 461<\/li>\n<li><b>&#8220;Study on the performance of nano-optoelectronics device: InGaAs\/GaAs VLW-QWIP&#8221;<\/b>,<br \/>\nXiong, D. Y.; Guo, F. M.; Zhang, W. E.; Nanoelectronics Conference (INEC), 2010 3rd International; 2010 , Page(s): 287 &#8211; 288<\/li>\n<li><b>&#8220;Research on the photoelectric characteristics of a double barrier structure with quantum dots-quantum well inserted in central well&#8221;<\/b>, Shengwei Zhu; Jianqiang Han; Fan, Lang.; Dayuan Xiong; Fangmin Guo; Nanoelectronics Conference (INEC), 2010 3rd International; 2010 , Page(s): 283 &#8211; 284<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/TED.2009.2034792\" target=\"_blank\">&#8220;Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes&#8221;<\/a><\/b>,<br \/>\nChiaria, S.; Furno, E.; Goano, M.; Bellotti, E.; Electron Devices, IEEE Transactions on; Volume: 57 , Issue: 1, 2010 , Page(s): 60 &#8211; 70<\/li>\n<\/ul>\n<h2>2009<\/h2>\n<ul class=\"publist\">\n<li><b><a href=\"http:\/\/www.cmoset.com\/uploads\/6b.5.09.pdf\" target=\"_blank\">&#8220;Advanced 3D simulation of semiconductor devices&#8221;<\/a><\/b>,<br \/>\nYue Fu, George Xiao, Michel Lestrade and Simon Li, 2009 International workshop on CMOS and Emerging Technologies (CMOSET&#8217;09), Vancouver, Canada<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1016\/j.solmat.2009.11.010\" target=\"_blank\">&#8220;Finite element simulations of compositionally graded InGaN solar cells&#8221;<\/a><\/b>,<br \/>\nSolar Energy Materials and Solar Cells, Volume 94, Issue 3, March 2010, Pages 478-483<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1016\/j.chemphys.2008.07.026\" target=\"_blank\">&#8220;Single conjugated polymer nanoparticle capacitors&#8221;<\/a><\/b>,<br \/>\nR. E. Palacios, K.-J. Lee &amp; al., Chemical Physics, Volume 357, Issues 1-3, 23 February 2009, Pages 21-27<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/CNKI:SUN:BDTG.0.2009-06-007\" target=\"_blank\">&#8220;Theoretical Analysis of the Number of Quantum Well in per Optical Resonance Period in 980nm OPS-VECSEL&#8221;<\/a><\/b>,<br \/>\nL. Qin, Z.H. Tian, L.W. Cheng &amp; al., Semiconductor Optoelectronics (2009)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1007\/s00339-009-5298-8\" target=\"_blank\">&#8220;Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nS.-H. Yen; M.-C. Tsai &amp; al., Applied Physics A: Materials Science &amp; Processing, Volume 97, Number 3 \/ November, 2009, pp. 705-708<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1117\/12.809877\" target=\"_blank\">&#8220;Reduction of efficiency droop in InGaN-based blue LEDs&#8221;<\/a><\/b><br \/>\nX. Ni; X. 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Yen; Optics Communications Volume 282, Issue 21, 1 November 2009, Pages 4252-4255<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1007\/s00340-008-3331-9\" target=\"_blank\">&#8220;Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers&#8221;<\/a><\/b>,<br \/>\nJ.-R. Chen, S.-C. Ling &amp; al., Applied Physics B: Lasers and Optics, Volume 95, Number 1 \/ April, 2009, Pages 145-153<\/li>\n<li><strong>&#8220;2D modeling of silicon based thin film dual and triple junction solar cells&#8221;<\/strong>,<br \/>\nY. G. Xiao; K. Uehara &amp; al, Optics and Photonics 2009, Proc. SPIE, Vol. 7409, 74090F (2009)<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1007\/s11801-009-9100-0\" target=\"_blank\">&#8220;Optimization of electrode shape for high power GaN-based light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nY.P. Fan; L.W. Cheng; Y.M. Lin; J.B. Zhang; X.H. Zeng, Optoelectronics Letters, Volume 5, Number 5 \/ September, 2009, Pages 337-340<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1117\/12.845420\" target=\"_blank\">&#8220;The design of back surface field layer for a single GaAs solar cell&#8221;<\/a><\/b>,<br \/>\nY. Xiong; K. Tang &amp; al.,Photonics and Optoelectronics Meetings (POEM) 2009, Proceedings of the SPIE, Volume 7518, pp. 751811-751811-6 (2009)<\/li>\n<li><b><a href=\"http:\/\/iopscience.iop.org\/1742-6596\/146\/1\/012028\/pdf\/1742-6596_146_1_012028.pdf\" target=\"_blank\">&#8220;Low dark current InGaAs\/InAlAs\/InP avalanche photodiode&#8221;<\/a><\/b>,<br \/>\nJ Muszalski; J Kaniewski; K Kalinowski;, 2nd National Conference on Nanotechnology &#8216;NANO 2008&#8217;, Journal of Physics: Conference Series 146 (2009) 012028<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/IWCE.2009.5091151\" target=\"_blank\">&#8220;Simulation on Crystalline Silicon Solar Cell with Laser-fired Contact (LFC)&#8221;<\/a><\/b>,<br \/>\nSheng, Y.; Xiao, Y.G.; Zhou, Y.J.; Lestrade, M.; Li, Z.Q.; Li, Z.M.S.;, Computational Electronics, 2009. IWCE &#8217;09. 13th International Workshop on; 2009 , Page(s): 1 &#8211; 4<\/li>\n<li><b>&#8220;2D modeling of si RCCs with laser-fired contact and surface texture&#8221;<\/b>,<br \/>\nXiao, Y. G.; Sheng, Y.; Zhou, Y. J.; Lestrade, M.; Li, Z. Q.; Li, Z. M. Simon; Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE, 2009 , Page(s): 001691 &#8211; 001695<\/li>\n<li><b>&#8220;Modeling of SI-based thin film triple-junction solar cells&#8221;<\/b>,<br \/>\nXiao, Y. G.; Uehara, K.; Lestrade, M.; Li, Z. Q.; Li, Z. M. Simon; Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE, 2009 , Page(s): 002154 &#8211; 002158<\/li>\n<li><b>&#8220;Numerical investigation of the effect of base doping density in transistor VCSELs&#8221;<\/b>,<br \/>\nShi, Wei; Faraji, Behnam; Chrostowski, Lukas; Communications and Photonics conference and Exhibition, 2009. ACP 2009. Asia; 2009 , Page(s): 1 &#8211; 2<\/li>\n<li><b><a href=\"http:\/\/link.aip.org\/link\/APPLAB\/v95\/i1\/p011116\/s1\" target=\"_blank\">&#8220;Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers&#8221;<\/a><\/b>,<br \/>\nKuo, Yen-Kuang; Chang, Jih-Yuan; Tsai, Miao-Chan; Yen, Sheng-Horng; Applied Physics Letters, Volume: 95 , Issue: 1, 2009 , Page(s): 011116 &#8211; 011116-3<\/li>\n<li><b>&#8220;Design optimization of GaN-based VCSELs&#8221;<\/b>,<br \/>\nPiprek, J.; Zhan-Ming Li; Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on; 2009 , Page(s): 67 &#8211; 68<\/li>\n<li><b>&#8220;Evaluating BP Solar&#8217;s Mono2 &#8211; material: Lifetime and cell electrical data&#8221;<\/b>,<br \/>\nStoddard, Nathan; Sidhu, Rubin; Creager, Joe; Dey, Soham; Kinsey, Bonnie; Maisano, Lisa; Phillips, Calista; Clark, Roger; Zahler, James; Xie, XianQing; Wu, Tingbin; Jiang, Qingtang; Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE; 2009 , Page(s): 001163 &#8211; 001168<\/li>\n<li><b>&#8220;Substrate batch effect in GaAs MESFET under ultra-short pulses&#8221;<\/b>,<br \/>\nBobreshov, A.M.; Korovchenko, I.S.; Stepkin, V.A.; Uskov, G.K.; Electromagnetic Compatibility, 2009 20th International Zurich Symposium on; 2009 , Page(s): 389 &#8211; 392<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/JSTQE.2009.2015150\" target=\"_blank\">&#8220;Enhancement of Light Power for Blue InGaN LEDs by Using Low-Indium-Content InGaN Barriers&#8221;<\/a><\/b>,<br \/>\nYen-Kuang Kuo; Miao-Chan Tsai; Sheng-Horng Yen; Ta-Cheng Hsu; Yu-Jiun Shen; Selected Topics in Quantum Electronics, IEEE Journal of; Volume: 15 , Issue: 4, 2009 , Page(s): 1115 &#8211; 1121<\/li>\n<li><b>&#8220;Effect of In and N incorporation on the GaInNAs VCSELs&#8221;<\/b>,<br \/>\nAbdul Manaf, Nor Azlian; Alias, Mohd Sharizal; Mithani, Sufian Mousa; Yahya, Mohamed Razman; Mat, Abdul Fatah Awang; Communications and Photonics conference and Exhibition, 2009. ACP 2009. Asia; 2009 , Page(s): 1 &#8211; 2<\/li>\n<li><b><a href=\"http:\/\/dx.doir.org\/10.1109\/OECC.2009.5222647\" target=\"_blank\">&#8220;Optoelectronics materials and components characterization for organic inorganic laser assembling&#8221;<\/a><\/b>,<br \/>\nPenna, S.; Reale, A.; Beleffi, G.M.T.; Andre, P.S.; Teixeira, A.L.J.; Nakao, M.; Shinada, S.; Wada, N.; OptoElectronics and Communications Conference, 2009. OECC 2009. 14th; 2009 , Page(s): 1 &#8211; 2<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/IWCE.2009.5091153\" target=\"_blank\">&#8220;Simulations of Optical Properties of a GaN Quantum Dot Embedded in a AlGaN Nanocolumn within a Mixed FEM\/atomistic Method&#8221;<\/a><\/b>,<br \/>\nPenazzi, G.; Pecchia, A.; Sacconi, F.; Auf der Maur, M.; Povolotskyi, M.; Romano, G.; Di Carlo, A.; Computational Electronics, 2009. IWCE &#8217;09. 13th International Workshop on; 2009 , Page(s): 1 &#8211; 4<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/NUSOD.2009.5297199\" target=\"_blank\">&#8220;High efficient 635nm resonant-cavity light-emitting diodes with modified electron stopped layers&#8221;<\/a><\/b>,<br \/>\nLysak, V.V.; Park, C.Y.; Park, K.W.; Yong Tak Lee; Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on; 2009 , Page(s): 113 &#8211; 114<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/LPT.2009.2016431\" target=\"_blank\">&#8220;Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg Implanted Current Blocking Layer&#8221;<\/a><\/b>,<br \/>\nMin-An Tsai; Peichen Yu; Chen, J.R.; Huang, J.K.; Chiu, C.H.; Kuo, H.C.; Lu, T.C.; Lin, S.H.; Wang, S.C.; Photonics Technology Letters, IEEE; Volume: 21 , Issue: 11, 2009 , Page(s): 688 &#8211; 690<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/SOPO.2009.5230066\" target=\"_blank\">&#8220;Optimization and Analysis on Several Impact Factors of High-Gain Separate Absorption, Grading, Charge and Multiplication Avalanche Photodiodes&#8221;<\/a><\/b>,<br \/>\nDapeng Hu; Bin Xu; Xilin Zhou; Fangmin Guo; Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on; 2009 , Page(s): 1 &#8211; 4<\/li>\n<li><b><a href=\"http:\/\/link.aip.org\/link\/JAPIAU\/v106\/i6\/p064507\/s1\" target=\"_blank\">&#8220;Avalanche photodiode punch-through gain determination through excess noise analysis&#8221;<\/a><\/b>,<br \/>\nLiu, Han-Din; Pan, Huapu; Hu, Chong; McIntosh, Dion; Lu, Zhiwen; Campbell, Joe; Kang, Yimin; Morse, Mike; Journal of Applied Physics, Volume: 106 , Issue: 6, 2009 , Page(s): 064507 &#8211; 064507-4<\/li>\n<li><b><a href=\"http:\/\/dx.doi.org\/10.1109\/LPT.2009.2021155\" target=\"_blank\">&#8220;Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes&#8221;<\/a><\/b>,<br \/>\nSheng-Horng Yen; Miao-Chan Tsai; Meng-Lun Tsai; Yu-Jiun Shen; Ta-Cheng Hsu; Yen-Kuang Kuo; Photonics Technology Letters, IEEE; Volume: 21 , Issue: 14, 2009 , Page(s): 975 &#8211; 977<\/li>\n<li><b><a href=\"http:\/\/link.aip.org\/link\/APPLAB\/v94\/i8\/p081113\/s1\" target=\"_blank\">&#8220;The origin of the high diode-ideality factors in GaInN\/GaN multiple quantum well light-emitting diodes&#8221;<\/a><\/b>,<br \/>\nZhu, Di; Xu, Jiuru; Noemaun, Ahmed N.; Kim, Jong Kyu; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Applied Physics Letters, Volume: 94 , Issue: 8, 2009 , Page(s): 081113 &#8211; 081113-3<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"<p>2011 \u201cCorrelation of barrier material and quantum\u2010well  [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"parent":448,"menu_order":1,"comment_status":"closed","ping_status":"open","template":"","meta":[],"_links":{"self":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages\/304"}],"collection":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/comments?post=304"}],"version-history":[{"count":0,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages\/304\/revisions"}],"up":[{"embeddable":true,"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/pages\/448"}],"wp:attachment":[{"href":"https:\/\/crosslight.com.cn\/wordpress\/wp-json\/wp\/v2\/media?parent=304"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}