2012

2014

“Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues”,
Marco Calciati, Michele Goano & others, AIP Advances, Vol. 4 No. 6 (2014), doi:10.1063/1.4882176
“Methods for slow axis beam quality improvement of high power broad area diode lasers”,
H. An, Y. Xiong, C.-L. J. Jiang, B. Schmidt, and G. Treusch, SPIE LASE, 2014, doi:10.1117/12.2040986
“A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED”,
Y. Bin, G. Zhi-You, X. Nan, Z. Pan-Jun, L. Jing, L. Fang-Zheng, et al., Chinese Physics B, Vol. 23, No. 4, 2014, doi:10.1088/1674-1056/23/4/048502
“Reduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers”,
J.-Y. Chang, Y.-A. Chang, T.-H. Wang, F.-M. Chen, B.-T. Liou, and Y.-K. Kuo, Optics letters, Vol. 39, No. 3, 2014, doi:10.1364/OL.39.000497
“GaN-Based Light-Emitting-Diode With a p-InGaN Layer”,
P. Chen, C.-H. Kuo, W.-C. Lai, Y. A. Chen, L. Chang, and S. Chang, Journal of Display Technology, Vol. 10, No. 3, 2014, doi:10.1109/JDT.2013.2293767
“Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN–AlGaN–GaN Last Barrier and Without an AlGaN Electron Blocking Layer”,
L. Cheng and S. Wu, Quantum Electronics, IEEE Journal of, Vol. 50, No. 4, 2014, doi:10.1109/JQE.2014.2305451
“Impact of Surface Recombination on the Performance of Phosphor-Free InGaN/GaN Nanowire White Light Emitting Diodes”,
A. T. Connie, H. P. T. Nguyen, Q. Wang, I. Shih, and Z. Mi, CLEO: Applications and Technology, 2014, doi:10.1364/CLEO_AT.2014.AF2P.6
“Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes”,
M. Djavid, H. Nguyen, S. Zhang, K. Cui, S. Fan, and Z. Mi, Semiconductor Science and Technology, Vol. 29, No. 8, 2014, doi:10.1088/0268-1242/29/8/085009
“A systematic study of silicon germanium interdiffusion for next generation semiconductor devices”, Y. Dong, PhD Thesis, University of British Columbia (Canada), 2014.
“Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells”,
K. Driscoll, M. F. Bennett, S. J. Polly, D. V. Forbes, and S. M. Hubbard, Applied Physics Letters, Vol. 104, No. 2, 2014, doi:10.1063/1.4862028
“Improve power conversion efficiency of slab coupled optical waveguide lasers”,
J. Fan, L. Zhu, M. Dogan, and J. Jacob, Optics Express, Vol. 22, No. 15, 2014, doi:10.1364/OE.22.017666
“Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission ”,
Z. Fang, Q. Li, X. Shen, H. Xiong, J. Cai, J. Kang, et al., Journal of Applied Physics, Vol. 115, No. 4, 2014, doi:10.1063/1.4863208
“Integrated Power Devices and TCAD Simulation”,
Y. Fu, Z. Li, W. T. Ng, and J. K. Sin, CRC Press, 2014, 1466583819
“Triggering of guiding and antiguiding effects in GaN-based VCSELs”,
E. Hashemi, J. Bengtsson, J. Gustavsson, M. Stattin, M. Glauser, G. Cosendey, et al., SPIE OPTO, 2014, doi:10.1117/12.2038152
“Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes”,
X. Ji, T. Wei, F. Yang, H. Lu, X. Wei, P. Ma, et al., Optics Express, Vol. 22, No. 103, 2014, doi:10.1364/OE.22.0A1001
“Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells”,
Y. Jing, Z. De-Gang, J. De-Sheng, L. Zong-Shun, C. Ping, L. Liang, et al., Chinese Physics B, Vol. 23, No. 6, 2014, doi::10.1088/1674-1056/23/6/068801
“Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers”,
C. Jin-Xin, S. Hui-Qing, Z. Huan, Z. Pan-Jun, and G. Zhi-You, Chinese Physics B, Vol. 23, No. 5, 2014, doi:10.1088/1674-1056/23/5/058502
“Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer”,
Z. G. Ju, W. Liu, Z.-H. Zhang, S. T. Tan, Y. Ji, Z. Kyaw, et al., ACS Photonics, Vol. 1, No. 4, 2014, doi:10.1021/ph500001e
“Simulation of a Single-Mode Tunnel-Junction-Based Long-Wavelength VCSEL”,
Z. D. Kaftroudi, E. Rajaei, and A. Mazandarani, Journal of Russian Laser Research, Vol. 35, No. 2, 2014, doi:10.1007/s10946-014-9408-5
“Y-function analysis of the low temperature behavior of ultra-thin film FD SOI MOSFETs”,
A. Karsenty and A. Chelly, Active and Passive Electronic Components Vol. 2014, doi:10.1155/2014/697369
“Efficiency enhancement in Cu 2 ZnSnS 4 solar cells with subwavelength grating nanostructures”,
S.-Y. Kuo and M.-Y. Hsieh, Nanoscale 6, No.13, 2014, doi:10.1039/C4NR00566J
“Device modeling of the performance of Cu (In, Ga) Se2 solar cells with V-shaped bandgap profiles”,
S.-Y. Kuo, M.-Y. Hsieh, D.-H. Hsieh, H.-C. Kuo, and F.-I. Lai, International Journal of Photoenergy Vol. 2014, doi:10.1155/2014/186579
“On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes”,
Z. Kyaw, Z.-H. Zhang, W. Liu, S. T. Tan, Z. G. Ju, X. L. Zhang, et al., Optics express, Vol. 22, No. 1, 2014, doi:10.1364/OE.22.000809
“Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes”,
L. Le, D. Zhao, D. Jiang, P. Chen, Z. Liu, J. Yang, et al., Optics Express, Vol. 22, No. 10, 2014, doi:http://dx.doi.org/10.1364/OE.22.011392
“Performance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier”,
Y. Lei, Z. Liu, M. He, Z. Li, J. Kang, X. Yi, et al., Applied Physics A, Vol. 115, No. 4, 2014, doi:10.1007/s00339-014-8393-4
“High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers”,
Z.-Y. Li, C.-Y. Lee, D.-W. Lin, B.-C. Lin, K.-C. Shen, C.-H. Chiu, et al., Quantum Electronics, IEEE Journal of Vol. 50, No. 5, 2014, doi:10.1109/JQE.2014.2304460
“A quantitative method for determination of carrier escape efficiency in GaN-based light-emitting diodes: A comparison of open-and short-circuit photoluminescence”,
S.-H. Lim, Y.-H. Ko, and Y.-H. Cho, Applied Physics Letters, Vol. 104, No. 9, 2014, doi:10.1063/1.4867238
“Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer”,
B. C. Lin, Y. A. Chang, K. J. Chen, C. H. Chiu, Z. Y. Li, Y. P. Lan, et al., Laser Physics Letters, Vol. 11, No. 8, 2014, doi:10.1088/1612-2011/11/8/085002
“Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer”,
B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, et al., Optics express, Vol. 22, No. 1, 2014, doi:10.1364/OE.22.000463
“Reduced droop effect in nitride light emitting diodes by taper-shaped electron blocking layer”,
C. Liu, Z. Ren, X. Chen, B. Zhao, X. Wang, and S. Li, IEEE Photonics Technology Letters, Vol. 26, No. 13, 2014, doi:10.1109/LPT.2014.2325598
“Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer”,
T. Lu, Z. Ma, C. Du, Y. Fang, F. Chen, Y. Jiang, et al., Applied Physics A, Vol. 114, No. 4, 2014, doi:10.1007/s00339-014-8284-8
“Effect of stair-case electron blocking layer on the performance of blue InGaN based LEDs”,
T. Lu, Z. Ma, C. Du, Y. Fang, F. Chen, Y. Jiang, et al., Journal of Display Technology, Vol. 10, No. 2, 2014, doi:10.1109/JDT.2013.2289358
“Modeling of HOT (111) HgCdTe MWIR detector for fast response operation”,
P. Martyniuk, W. Gawron, W. Pusz, D. Stanaszek, and A. Rogalski, Optical and Quantum Electronics, Feb. 2014, doi:10.1007/s11082-013-9860-4
“MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions”,
P. Martyniuk, A. Koźniewski, A. Kębłowski, W. Gawron, and A. Rogalski, Opto-Electronics Review, Vol. 22, No. 2, 2014, doi:10.2478/s11772-014-0186-y
“Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes”,
Z. Mi, H. P. Nguyen, S. Zhang, A. T. Connie, M. G. Kibria, Q. Wang, et al., SPIE OPTO, 2014, doi:10.1117/12.2041284
“Effects of the p-AlInGaN/GaN superlattices’ structure on the performance of blue LEDs”,
L. Na, Y. Xiaoyan, L. Meng, G. Enqing, F. Xiangxu, S. Zhao, et al., Journal of Semiconductors, Vol. 35, No. 2, 2014, doi:10.1088/1674-4926/35/2/024010
“Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions”,
J. Piprek, Applied Physics Letters, Vol. 104, No. 5, 2014, doi:10.1063/1.4864311
“Blue light emitting diode exceeding 100% quantum efficiency”,
J. Piprek, physica status solidi (RRL)-Rapid Research Letters, Vol. 8, No. 5, 2014, doi:10.1002/pssr.201409027
“Delta-Doping Effects on Quantum-Dot Solar Cells”,
S. J. Polly, D. V. Forbes, K. Driscoll, S. Hellstrom, and S. M. Hubbard, IEEE Journal of Photovoltaics, Vol. 4, No. 4, 2014, doi:10.1109/JPHOTOV.2014.2316677
“Mid-Wavelength Infrared nBn for HOT Detectors”,
A. Rogalski and P. Martyniuk, Journal of Electronic Materials, Vol. 43 No. 8, 2014, doi:10.1007/s11664-014-3161-y
“Tandem structure for efficiency improvement in GaN based light-emitting diodes”,
M.-C. Tsai, B. Leung, T.-C. Hsu, and Y.-K. Kuo, Journal of Lightwave Technology, Vol. 32, No. 9, 2014, doi:10.1109/JLT.2014.2313953
“Ultrabroad stimulated emission from quantum well laser”,
H. Wang, X. Zhou, H. Yu, J. Mi, J. Wang, J. Bian, et al., Applied Physics Letters, Vol. 104, No. 25, 2014, doi:10.1063/1.4885366
“Improvement of carrier distribution by using thinner quantum well with different location”,
S.-W. Wang, D.-W. Lin, C.-Y. Lee, C.-C. Lin, and H.-C. Kuo, SPIE OPTO, 2014, doi:10.1117/12.2038402
“Self-heating dependent characteristic of GaN-based light-emitting diodes with and without AlGaInN electron blocking layer”,
T. Wang, J. Xu, and X. Wang, Chinese Science Bulletin, Vol. 59 No. 20, 2014, doi:10.1007/s11434-014-0235-4
“Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer”,
Z. Xiang-Jing, Z. Jun, L. Dan-Wei, Y. Han-Xiang, R. Zhi-Wei, T. Jin-Hui, et al., Chinese Physics B, Vol. 23, No. 6, 2014, doi:10.1088/1674-1056/23/6/068502
“Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p—i—n avalanche photodiodes”,
L. Xiao-Jing, Z. De-Gang, J. De-Sheng, L. Zong-Shun, C. Ping, W. Liang-Liang, et al., Chinese Physics B, Vol. 23, No. 2, 2014, doi:10.1088/1674-1056/23/2/028503
“Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer”,
Y. Xiao-Peng, F. Guang-Han, D. Bin-Bin, X. Jian-Yong, X. Yao, Z. Tao, et al., Chinese Physics B, Vol. 23, No. 2, 2014, doi:10.1088/1674-1056/23/2/028502
“Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers”,
J.-Y. Xiong, Y.-Q. Xu, S.-W. Zheng, G.-H. Fan, and T. Zhang, Applied Physics A, Vol. 114, No. 2, 2014, doi:10.1007/s00339-013-8069-5
“Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier”,
J.-Y. Xiong, Y.-Q. Xu, S.-W. Zheng, F. Zhao, B.-B. Ding, J.-J. Song, et al., Optics Communications, Vol. 312, No. 2014, doi:10.1016/j.optcom.2013.08.053
“Study of dual-blue light-emitting diodes with asymmetric AlGaN graded barriers”,
Q.-r. Yan, Y. Zhang, and J.-z. Li, Optoelectronics Letters, Vol. 10, No. 2014, doi:10.1007/s11801-014-4062-2
“Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers”,
Y. Yang, J. Wang, J. Li, and Y. Zeng, Journal of Applied Physics, Vol. 115, No. 23, 2014, doi:10.1063/1.4879252
“Enhancement of hole injection with Mg–Si-codoped barriers in InGaN-based light-emitting diodes”,
Y. Yang and Y. Zeng, Optics Communications, Vol. 326, No. 2014, doi:10.1016/j.optcom.2014.03.064
“Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers”,
Y. Yang and Y. Zeng, physica status solidi (a), Vol. 211, No. 7, 2014, doi:10.1002/pssa.201431088
“Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers”,
Y.-J. Yang and Y.-P. Zeng, Applied Physics A, Vol. 211 No. 7 2014, doi:10.1007/s00339-014-8321-7
“Modeling of LWIR nBn HgCdTe photodetector”,
Z. Ye, Y. Chen, P. Zhang, C. Lin, X. Hu, R. Ding, et al., SPIE Defense+ Security, 2014, doi:10.1117/12.2053288
“Photon trapping photodiode design in HgCdTe mid-wavelength infrared focal plane array detectors”,
Z. Ye, P. Zhang, Y. Li, Y. Chen, S. Zhou, C. Sun, et al., Optical and Quantum Electronics, March 2014, doi:10.1007/s11082-014-9904-4
“Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer”,
X. Yu, G. Fan, S. Zheng, B. Ding, and T. Zhang, Photonics Technology Letters, IEEE, Vol. 26, No. 11, 2014, doi:10.1109/LPT.2014.2316546
“Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes”,
D. Żak, J. Jureńczyk, and J. Kaniewski, Detection, Vol. 2, No. 2, 2014, doi:10.4236/detection.2014.22003
“Efficiency-Droop Reduction in Blue InGaN Light-Emitting Diodes with Low Temperature p-type Insertion Layer”,
J. Zhang, X.-J. Zhuo, D.-W. Li, Z.-W. Ren, H.-X. Yi, J.-H. Tong, et al., Superlattices and Microstructures, Vol. 73 Septermber 2014, doi:10.1016/j.spmi.2014.05.017
“Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes by using staggered quantum wells”,
M. Zhang, Y. Li, S. Chen, W. Tian, J. Xu, X. Li, et al., Superlattices and Microstructures, July 2014, doi:10.1016/j.spmi.2014.07.002
“Design of HgCdTe heterojunction photodiodes on Si substrate”,
P. Zhang, Z. Ye, Y. Chen, C. Lin, X. Hu, R. Ding, et al., SPIE Sensing Technology+ Applications, 2014, doi:10.1117/12.2050089
“On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes”,
S. Zhang, A. T. Connie, D. A. Laleyan, H. Pham Trung Nguyen, Q. Wang, J. Song, et al., Vol. 50 No. 6, 2014, doi:10.1109/JQE.2014.2317732
“On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer”,
Z.-H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, et al., Applied Physics Letters, Vol. 104, No. 7, 2014, doi:10.1063/1.4866041
“Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes”,
S. Zhu, J. Wang, J. Yan, Y. Zhang, Y. Pei, Z. Si, et al., ECS Solid State Letters, Vol. 3, No. 3, 2014, doi:10.1149/2.007403ssl
“Enhanced performances of InGaN/GaN-based blue LED with an ultra-thin inserting layer between GaN barriers and InGaN wells”,
X.-J. Zhuo, J. Zhang, D.-W. Li, X.-F. Wang, W.-L. Wang, J.-S. Diao, et al., Optics Communications, Vol. 325, No. 2014, doi:10.1016/j.optcom.2014.04.018

2013

“Optimisation of optical properties of a long-wavelength GaInNAs quantum-well laser diode”,
M. Alias, A. Al-Omari, F. Maskuriy, F. Faiz, and S. Mitani, Quantum Electronics, Vol. 43, No. 11, 2013, doi:10.1070/QE2013v043n11ABEH015127
“Analytical model for threshold-base current of a transistor laser with multiple quantum wells in the base”,
R. Basu, B. Mukhopadhyay, and P. K. Basu, Optoelectronics, IET, Vol. 7, No. 3, 2013, doi:10.1049/iet-opt.2012.0039
“Comment on” Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop”[Phys. Rev. Lett. 110, 177406 (2013)]”,
F. Bertazzi, M. Goano, X. Zhou, M. Calciati, G. Ghione, M. Matsubara, et al., arXiv preprint arXiv:1305.2512, 2013
“Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content”,
Z. Bi-Jun, C. Xin, R. Zhi-Wei, T. Jin-Hui, W. Xing-Fu, L. Dan-Wei, et al., Chinese Physics B, Vol. 22, No. 8, 2013, doi:10.1088/1674-1056/22/8/088401
“Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer”,
D. Bin-Bin, Z. Fang, S. Jing-Jing, X. Jian-Yong, Z. Shu-Wen, Z. Yun-Yan, et al., Chinese Physics B, Vol. 22, No. 8, 2013, doi:10.1088/1674-1056/22/8/088503
“Enhancing light output of GaN-based LEDs with graded-thickness barriers and wells”,
B. Cao, R. Hu, Z. Gan, and S. Liu, IEEE Photonics Technology Letters, Vol. 25, No. 18, 2013, pp. 1762 – 1765, doi:10.1109/LPT.2013.2275166
“Advantages of blue InGaN light-emitting diodes with composition‐graded barriers and electron‐blocking layer”,
J. Y. Chang and Y. K. Kuo, physica status solidi (a), Vol. 210, No. 6, 2013, doi:10.1002/pssa.201228764
“Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers”,
J.-Y. Chang, Y.-A. Chang, F.-M. Chen, Y.-T. Kuo, and Y.-K. Kuo, Photonics Technology Letters, IEEE, Vol. 25, No. 1, 2013, doi:10.1109/LPT.2012.2227700
“Numerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration”,
J.-Y. Chang, F.-M. Chen, Y.-K. Kuo, Y.-H. Shih, J.-K. Sheu, W.-C. Lai, et al., Optics letters, Vol. 38, No. 16, 2013, doi:10.1364/OL.38.003158
“Simulation of high-efficiency GaN/InGaN pin solar cell with suppressed polarization and barrier effects”,
J.-Y. Chang, S.-H. Yen, Y.-A. Chang, and Y.-K. Kuo, Quantum Electronics, IEEE Journal of, Vol. 49, No. 1, 2013, doi:10.1109/JQE.2012.2225601
“Numerical simulation of GaN-based LEDs with chirped multiquantum barrier structure”,
S. Chang, Y. Lin, C. Liu, T. Ko, S. Hon, and S. Li, Quantum Electronics, IEEE Journal of, Vol. 49, No. 4, 2013, doi:10.1109/JQE.2013.2250919
“Efficiency enhancement in InGaN/GaN light-emitting diodes by decreasing the thickness of last barrier”,
L.-W. Cheng, Y. Sheng, C.-S. Xia, and W.-D. Hu, Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109/NUSOD.2013.6633118
“Theory and design optimization of energy-efficient hydrophobic wafer-bonded III–V/Si hybrid semiconductor optical amplifiers”,
S. Cheung, Y. Kawakita, K. Shang, and S. Yoo, Journal of Lightwave Technology, Vol. 31, No. 24, 2013, doi:10.1109/JLT.2013.2284287
“Physical modeling of an optical memory cell based on quantum dot-in-well hybrid structure”,
L. Ding, L. Fan, Y. Li, and F. Guo, Optical and Quantum Electronics, Vol. 45, No. 7, 2013, doi:10.1007/s11082-013-9663-7
“Simulation on a Charge Sensitive Infrared Phototransistor for 45μm Wavelength”,
L. Ding, Y. Li, and F. Guo, Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109/NUSOD.2013.6633105
“Weak light characteristics of potential biosensor unit”,
L. Ding, Y.-Q. Li, X.-Y. Liu, J.-H. Shen, S. H. Zhang, and F.-M. Guo, Micro & Nano Letters, IET, Vol. 8, No. 10, 2013, doi:10.1049/mnl.2013.0292
“Weak light characteristics of a new photoelectric sensor with potential biosensor application”,
L. Ding, M. Wang, Y. Li, X. Liu, J. Shen, and F. Guo, Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on, doi:10.1109/NEMS.2013.6559947
“Physical modeling and simulation of a high-performance charge sensitive infrared phototransistor”,
L. Ding, P. Xu, Y. Li, and F. Guo, Optical and Quantum Electronics, Oct. 2013, doi:10.1007/s11082-013-9808-8
“Study of the effect of in composition variation in the active region and barrier layers on the structure performance of 462 nm InGaN QW lasers”,
A. Dragulinescu, Electronics, Computers and Artificial Intelligence (ECAI), 2013 International Conference on, doi:10.1109/ECAI.2013.6636165
“Doping concentration variation in the barrier layers of a 462 nm In 0.02 Ga 0.98 N QW laser for structure performance improvement”,
A. Dragulinescu, Electronics, Computers and Artificial Intelligence (ECAI), 2013 International Conference on, doi:10.1109/ECAI.2013.6636166
“Investigation of the design parameters of quantum dot enhanced III-V solar cells”,
K. Driscoll, M. Bennett, S. Polly, D. V. Forbes, and S. M. Hubbard, SPIE OPTO 2013, doi:10.1117/12.2005457
“Nano-device modeling for charge-sensitive infrared photodetector used in very long wavelength and THz”,
L. Fan, L. Ding, Q. Weng, and F. Guo, Integrated Ferroelectrics, Vol. 145, No. 1, 2013, doi:10.1080/10584587.2013.788423
“Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer”,
Z. Fang, Y. Guang-Rui, S. Jing-Jing, D. Bin-Bin, X. Jian-Yong, S. Chen, et al., Chinese Physics B, Vol. 22, No. 5, 2013, doi:10.1088/1674-1056/22/5/058503
“Performance enhancement of GaN-based laser diodes with prestrained growth”,
M. Feng, J. Liu, S. Zhang, D. Jiang, Z. Li, K. Zhou, et al., IEEE Photonics Technology Letters Vol. 25 No. 4, 2013, pp. 2401-2404, doi:10.1109/LPT.2013.2287206
“High efficient GaN-based laser diodes with tunnel junction”,
M. Feng, J. Liu, S. Zhang, D. Jiang, Z. Li, K. Zhou, et al., Applied Physics Letters, Vol. 103, No. 4, 2013, doi:10.1063/1.4816598
“Design considerations for GaN-based blue laser diodes with InGaN upper waveguide layer”,
M.-X. Feng, J.-P. Liu, S.-M. Zhang, D.-S. Jiang, Z.-C. Li, D.-Y. Li, et al., Selected Topics in Quantum Electronics, IEEE Journal of, Vol. 19, No. 4, 2013, doi:10.1109/JSTQE.2012.2237015
“Influence of barrier thickness modulation of InGaN/GaN MQW solar cells”,
C.-C. Hsieh, F.-I. Lai, and H.-W. Wang, Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, doi:10.1109/PVSC.2013.6744885
“Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell”,
L.-H. Hsu, C.-C. Lin, M.-H. Tan, Y.-L. Yeh, D.-W. Lin, H.-V. Han, et al., Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, doi:10.1109/PVSC.2013.6744965
“Numerical Simulation of the High Gain and Low Breakdown Voltage InGaAs/InP Avalanche Photodiode”,
D. Hu, D. Xiong, and F. Guo, Advanced Materials Research, Vol. 652, No. 2013, doi:10.4028/www.scientific.net/AMR.652-654.612
“830-nm AlGaAs-InGaAs graded index double barrier separate confinement heterostructures laser diodes with improved temperature and divergence characteristics”,
C.-T. Hung and T.-C. Lu, Quantum Electronics, IEEE Journal of, Vol. 49, No. 1, 2013, doi:10.1109/JQE.2012.2231053
“Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier”,
Y. Ji, Z.-H. Zhang, S. T. Tan, Z. G. Ju, Z. Kyaw, N. Hasanov, et al., Optics letters, Vol. 38, No. 2, 2013, doi:10.1364/OL.38.000202
“Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer”,
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“Self-Consistent Simulation Model and Enhancement of Wavelength Tuning of InGaAsP/InP Multisection DBR Laser Diodes”,
G. Kyritsis and N. Zakhleniuk, Selected Topics in Quantum Electronics, IEEE Journal of, Vol. 19, No. 5, 2013, doi:10.1109/JSTQE.2013.2259581
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“Effect of Polarization-Matched n-Type AlGaInN Electron-Blocking Layer on the Optoelectronic Properties of Blue InGaN Light-Emitting Diodes”,
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“3D modeling of CMOS image sensor and aperture size effect”,
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Z. Q. Li and Z. M. S. Li, Vol. 8639, No. 2013,
“A look into the origin of shunt leakage current of Cu(In,Ga)Se2 solar cells via experimental and simulation methods”,
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“Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice Electron Blocker Layer”,
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“Critical Electric Field of InGaN pin Solar Cell”,
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G. Liu, J. Zhang, C. K. Tan, and N. Tansu, Photonics Journal, IEEE, Vol. 5, No. 2, 2013, doi:10.1109/JPHOT.2013.2255028
“Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier”,
X. Liu, G. Fan, S. Zheng, C. Gong, T. Lu, Y. Zhang, et al., Science China Technological Sciences, Vol. 56, No. 1, 2013, doi:10.1007/s11431-012-5052-x
“Electrical injection schemes for nanolasers”,
A. Lupi, I.-S. Chung, and K. Yvind, SPIE OPTO 2013, doi:10.1109/LPT.2013.2293511
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“Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range”,
P. Martyniuk, W. Gawron, and A. Rogalski, Journal of Electronic Materials, Vol. 42, No. 11, 2013, doi:10.1007/s11664-013-2737-2
“Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector”,
P. Martyniuk and A. Rogalski, Bulletin of the Polish Academy of Sciences: Technical Sciences, Vol. 61, No. 1, 2013, doi:10.2478/bpasts-2013-0020
“Modelling of MWIR HgCdTe complementary barrier HOT detector”,
P. Martyniuk and A. Rogalski, Solid-State Electronics, Vol. 80, No. 2013, doi:10.1016/j.sse.2012.10.021
“Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based light-emitting diodes with color-coded quantum wells”,
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“Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop”,
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“Breaking the carrier injection bottleneck of phosphor-free nanowire white light-emitting diodes”,
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“Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer”,
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D. Tsurumi, K. Hamada, and Y. Kawasaki, Journal of Applied Physics, Vol. 113, No. 14, 2013, doi:10.1063/1.4800134
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“Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer”,
T.-H. Wang and J.-L. Xu, Materials Science in Semiconductor Processing, Nov. 2013, doi:10.1016/j.mssp.2013.10.026
“Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters”,
Y. Wei, W. Yi-Yang, L. Ning-Yang, L. Lei, C. Zhao, and H. Xiao-Dong, Chinese Physics B, Vol. 22, No. 4, 2013, doi:10.1088/1674-1056/22/4/047801
“Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure”,
C. Wen-Yu, H. Yong-Fa, C. Zhao, Y. Wei, D. Wei-Min, and H. Xiao-Dong, Chinese Physics B, Vol. 22, No. 7, 2013, doi:10.1088/1674-1056/22/7/076803
“Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes”,
C. S. Xia, Z. S. Li, Z. Li, and Y. Sheng, Applied Physics Letters, Vol. 102, No. 1, 2013, doi:10.1063/1.4774091
“Effect of last barrier on efficiency improvement of blue InGaN/GaN light-emitting diodes”,
C. S. Xia, Z. S. Li, and Y. Sheng, Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109/NUSOD.2013.6633113
“On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes”,
C. S. Xia, Z. S. Li, and Y. Sheng, Applied Physics Letters, Vol. 103, No. 23, 2013, doi:10.1063/1.4839417
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“Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers”,
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“Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer”,
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“Investigation of blue InGaN light-emitting diodes with AlGaN barriers of the increasing Al composition”,
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“Efficiency droop improvement for InGaN-based light-emitting diodes with gradually increased In-composition across the active region”,
J. Xu and T. Wang, Physica E: Low-dimensional Systems and Nanostructures, Vol. 52, No. 2013, doi:10.1016/j.physe.2013.03.004
“Advantage of tapered and graded AlGaN electron blocking layer in InGaN‐based blue laser diodes”,
W. Yang, D. Li, J. He, and X. Hu, physica status solidi (c), Vol. 10, No. 3, 2013, doi:10.1002/pssc.201200637
“Efficient collection of photogenerated carriers by inserting double tunnel junctions in III-nitride pin solar cells”,
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“Design of spectral crosstalk suppressing structure in two-color HgCdTe infrared focal plane arrays detector”,
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“InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer ”,
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“Design and analysis of high-temperature operating 795 nm VCSELs for chip-scale atomic clocks”,
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J. Zhang, Y. Ning, J. Zhang, X. Zhang, and L. Wang, ISPDI 2013-Fifth International Symposium on Photoelectronic Detection and Imaging, doi:10.1117/12.2032212
“The advantages of AlGaN-based UV-LEDs inserted with a p-AlGaN layer between the EBL and active region”,
J. Zhang, W. Tian, F. Wu, W. Yan, H. Xiong, J. Dai, et al., Aug. 2013, doi:10.1109/JPHOT.2013.2278520
“Asymmetric Heterostructure with Broad Waveguide for 1.06μm Range High-Power Laser Diodes”,
Y. ZHANG, T. LI, E. HAO, R. CHEN, and Y. WANG, Nanophotonics, Nanoelectronics and Nanosensor 2013, doi:10.1364/N3.2013.NSa3A.32
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“On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes”,
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“Improvement of carrier distribution in dual wavelength light-emitting diodes”,
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“Analysis of the subthreshold characteristics of vertical tunneling field effect transistors”,
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“Optimized Design and Performance Research of the High-Voltage LEDs Chipset”,
M. J. Zhu, H. Y. Huang, Z. Y. Guo, and D. X. Cao, Applied Mechanics and Materials, Vol. 389, No. 2013, doi:10.4028/www.scientific.net/AMM.389.383

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M. Alias, F. Maskuriy, F. Faiz, and S. Mitani, Computer Applications and Industrial Electronics (ISCAIE), 2012 IEEE Symposium on, doi:10.1109/ISCAIE.2012.6482065
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A. Braun, A. Vossier, E. A. Katz, N. J. Ekins-Daukes, and J. M. Gordon, Energy Environ. Sci., Vol. 5, No. 9, 2012, doi:10.1039/C2EE22167E
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“Project-Based Learning with an Online Peer Assessment System in a Photonics Instruction for Enhancing LED Design Skills”,
S.-H. Chang, T.-C. Wu, Y.-K. Kuo, and L.-C. You, Turkish Online Journal of Educational Technology-TOJET, Vol. 11, No. 4, 2012,
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“Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes”,
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“Improvement of efficiency droop in blue InGaN light-emitting diodes with p-InGaN/GaN superlattice last quantum barrier”,
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K. Driscoll and S. Hubbard, Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE, doi:10.1109/PVSC.2012.6318211
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L. Fan and F. Guo, Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on, doi:10.1109/NUSOD.2012.6316505
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K. Gai, L. Li, J. Zhao, Y. Wang, T. Li, P. Lu, et al., Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109/ICoOM.2012.6316236
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X. Gang, E. Xu, N. Hashemi, Z. Bo, F. Y. Fu, and W. T. Ng, Chinese Physics B, Vol. 21, No. 8, 2012, doi:10.1088/1674-1056/21/8/086105
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J. Kaniewski, J. Jurenczyk, D. Zak, and J. Muszalski, 18th Czech-Polish-Slovak Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 2012, doi:10.1117/12.2007245
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M. Kuo, J. Hsing, T. Chiu, C. Li, W. Kuo, T. Lay, et al., Optics express, Vol. 20, No. 106, 2012, doi:10.1364/OE.20.00A828
“Modeling and optimization of sub-wavelength grating nanostructures on Cu (In, Ga) Se2 solar cell”,
S.-Y. Kuo, M.-Y. Hsieh, F.-I. Lai, Y.-K. Liao, M.-H. Kao, and H.-C. Kuo, Japanese Journal of Applied Physics, Vol. 51, No. 10S, 2012, doi:10.1143/JJAP.51.10NC14
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J. Liang, W. Hu, X. Chen, C. Xia, and L. Cheng, Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on, doi:10.1109/NUSOD.2012.6316494
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J. Piprek, Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on, doi:10.1109/NUSOD.2012.6316546
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“Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping”,
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L. Redaelli, M. Martens, J. Piprek, H. Wenzel, C. Netzel, A. Linke, et al., SPIE OPTO 2012, doi:10.1117/12.908368
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“Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers”,
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“Adv. Optoelectron. Technol. Inc., Hsinchu, Taiwan”,
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“Simulation and analysis of 980nm intracavity-contacted VCSEL”,
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“Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation”,
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“High power asymmetric 980nm broad-waveguide diode lasers with current blocking layer”,
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“Effects of Spontaneous and Piezoelectric Polarization on Spontaneous Emission Rate of Blue LEDs on SiC Substrates”,
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“Two-dimensional modeling of CdZnTe/Si based dual and triple junction solar cells”,
Y. Xiao, Z. Li, M. Lestrade, and Z. S. Li, SPIE OPTO 2012, doi:10.1117/12.906803
“Improved Efficiency Droop in a GaN-Based Light-Emitting Diode with an AlInN Electron-Blocking Layer”,
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“Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer”,
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“Si PIN diodes for detecting photoluminescence of NAPDH and riboflavin”,
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“Crosstalk suppressing design of GaAs microlenses integrated on HgCdTe infrared focal plane arrays”,
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“Design and Fabrication of Integrated Electroabsorption Modulated Laser”,
Y.-C. Yu, Ph.D. Thesis, 2012, National Taiwan University of Science and Technology
“CIGS solar cell on flexible stainless steel substrate fabricated by sputtering method: Simulation and experimental results”,
R. Zhang, D. R. Hollars, and J. Kanicki, Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on,
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“Performance Enhancement of Blue Light-Emitting Diodes Without an Electron-Blocking Layer by Using p-Type Doped Barriers and a Hole-Blocking Layer of Low Al Mole Fraction”,
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“The design of short wavelength light emitting diodes”,
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